System and method for producing monocrystalline silicon ingots using vaporized dopants von WU YUQIAO, IOFF JEFFREY D, LUTER WILLIAM L, PHILLIPS RICHARD J

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Dicing semiconductor wafer camera system and method von VALLEY JOHN F, IOFF JAMES D, TANA VINOD, MEYER BENJAMIN MICHAEL, LUTER WILLIAM L, KAISER JEFFREY SCOTT

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Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons von Llinas, Juan Pablo, Fairbrother, Andrew, Borin Barin, Gabriela, Shi, Wu, Lee, Kyunghoon, Wu, Shuang, Yong Choi, Byung, Braganza, Rohit, Lear, Jordan, Kau, Nicholas, Choi, Wonwoo, Chen, Chen, Pedramrazi, Zahra, Dumslaff, Tim, Narita, Akimitsu, Feng, Xinliang, Müllen, Klaus, Fischer, Felix, Zettl, Alex, Ruffieux, Pascal, Yablonovitch, Eli, Crommie, Michael, Fasel, Roman, Bokor, Jeffrey

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Transport properties of single-crystal tetracene field-effect transistors with silicon dioxide gate dielectric von Newman, Christopher R., Chesterfield, Reid J., Merlo, Jeffrey A., Frisbie, C. Daniel

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Performance Evaluation of Transition Metal Dichalcogenides Based Steep Subthreshold Slope Tunnel Field Effect Transistor von Kumar, Prateek, Gupta, Maneesha, Singh, Kunwar

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Illumination instabilities in ZnO/HfO2 thin-film transistors and influence of grain boundary charge von Siddiqui, Jeffrey J., Phillips, Jamie D., Leedy, Kevin, Bayraktaroglu, Burhan

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Single-molecule diodes with high rectification ratios through environmental control von Capozzi, Brian, Xia, Jianlong, Adak, Olgun, Dell, Emma J., Liu, Zhen-Fei, Taylor, Jeffrey C., Neaton, Jeffrey B., Campos, Luis M., Venkataraman, Latha

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A comparison study of symmetric ultrathin-body double-gate devices with metal source/drain and doped source/drain von Shiying Xiong, Tsu-Jae King, Bokor, J.

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Measuring thermoelectric transport properties of materials von Borup, Kasper A, de Boor, Johannes, Wang, Heng, Drymiotis, Fivos, Gascoin, Franck, Shi, Xun, Chen, Lidong, Fedorov, Mikhail I, Müller, Eckhard, Iversen, Bo B, Snyder, G. Jeffrey

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New horizons in thermoelectric materials: Correlated electrons, organic transport, machine learning, and more von Urban, Jeffrey J., Menon, Akanksha K., Tian, Zhiting, Jain, Anubhav, Hippalgaonkar, Kedar

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Ultralow contact resistance between semimetal and monolayer semiconductors von Shen, Pin-Chun, Su, Cong, Lin, Yuxuan, Chou, Ang-Sheng, Cheng, Chao-Ching, Park, Ji-Hoon, Chiu, Ming-Hui, Lu, Ang-Yu, Tang, Hao-Ling, Tavakoli, Mohammad Mahdi, Pitner, Gregory, Ji, Xiang, Cai, Zhengyang, Mao, Nannan, Wang, Jiangtao, Tung, Vincent, Li, Ju, Bokor, Jeffrey, Zettl, Alex, Wu, Chih-I, Palacios, Tomás, Li, Lain-Jong, Kong, Jing

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Demonstration of a phonon-glass electron-crystal strategy in (Hf,Zr)NiSn half-Heusler thermoelectric materials by alloying von Liu, Yintu, Xie, Hanhui, Fu, Chenguang, Snyder, G. Jeffrey, Zhao, Xinbing, Zhu, Tiejun

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Developing 9,10-anthracene Derivatives: Optical, Electrochemical, Thermal, and Electrical Characterization von Vorona, Mikhail Y, Yutronkie, Nathan J, Melville, Owen A, Daszczynski, Andrew J, Agyei, Kwame T, Ovens, Jeffrey S, Brusso, Jaclyn L, Lessard, Benoît H

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Structural optimization of SUTBDG devices for low-power applications von Shiying Xiong, Bokor, J.

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Transient metal-centered states mediate isomerization of a photochromic ruthenium-sulfoxide complex von Cordones, Amy A., Lee, Jae Hyuk, Hong, Kiryong, Cho, Hana, Garg, Komal, Boggio-Pasqua, Martial, Rack, Jeffrey J., Huse, Nils, Schoenlein, Robert W., Kim, Tae Kyu

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High drain field impact ionization transistors as ideal switches von Yuan, Baowei, Chen, Zhibo, Chen, Yingxin, Tang, Chengjie, Chen, Weiao, Cheng, Zengguang, Zhao, Chunsong, Hou, Zhaozhao, Zhang, Qiang, Gan, Weizhuo, Gao, Jiacheng, Wang, Jiale, Xu, Jeffrey, Hu, Guangxi, Wu, Zhenhua, Luo, Kun, Luo, Mingyan, Zhang, Yuanbo, Zhang, Zengxing, Xiong, Shisheng, Cong, Chunxiao, Bao, Wenzhong, Ma, Shunli, Wan, Jing, Zhou, Peng, Lu, Ye

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Higher mobility in bulk semiconductors by separating the dopants from the charge-conducting band - a case study of thermoelectric PbSe von Wang, Heng, Cao, Xianlong, Takagiwa, Yoshiki, Snyder, G. Jeffrey

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Lead-free tin chalcogenide thermoelectric materials von Zhou, Min, Snyder, G. Jeffrey, Li, Laifeng, Zhao, Li-Dong

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A review of plague persistence with special emphasis on fleas von Wimsatt, Jeffrey, Biggins, Dean E

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Is gate line edge roughness a first-order issue in affecting the performance of deep sub-micro bulk MOSFET devices? von Shiying Xiong, Bokor, J., Qi Xiang, Fisher, P., Dudley, I., Paula Rao, Haihong Wang, En, B.

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