Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers

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Development of Tool for Contamination Layer Thickness Measurement Using High Power Extreme Ultraviolet Light and in Situ Ellipsometer von Watanabe, Takeo, Kikuchi, Yukiko, Takahashi, Toshiya, Katayama, Kazuhiro, Takagi, Isamu, Sugie, Norihiko, Tanaka, Hiroyuki, Shiobara, Eishi, Inoue, Soichi, Harada, Tetsuo, Kinoshita, Hiroo

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Recent Progress in EUV Resist Outgas Research at EIDEC von Shiobara, Eishi, Takagi, Isamu, Kikuchi, Yukiko, Sasami, Takeshi, Minegishi, Shinya, Fujimori, Toru, Watanabe, Takeo, Harada, Tetsuo, Kinoshita, Hiroo, Inoue, Soichi

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Comparison of Resist Family Outgassing Characterization between EUV and EB von Takagi, Isamu, Takahashi, Toshiya, Sugie, Norihiko, Katayama, Kazuhiro, Kikuchi, Yukiko, Shiobara, Eishi, Tanaka, Hiroyuki, Inoue, Soichi, Watanabe, Takeo, Harada, Tetsuo, Kinoshita, Hiroo

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Comparison of Resist Outgassing Characterization between High Power EUV and EB von Sugie, Norihiko, Takahashi, Toshiya, Katayama, Kazuhiro, Takagi, Isamu, Kikuchi, Yukiko, Shiobara, Eishi, Tanaka, Hiroyuki, Inoue, Soichi, Watanabe, Takeo, Harada, Tetsuo, Kinoshita, Hiroo

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Full-Chip Layout Optimization for Process Margin Enhancement Using Model-Based Hotspot Fixing System von Kobayashi, Sachiko, Kyoh, Suigen, Kotani, Toshiya, Takekawa, Yoko, Inoue, Soichi, Nakamae, Koji

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Focus Monitor Using Asymmetric Diffraction Rays by Off-Axis Monopole Illumination von Sato, Takashi, Inoue, Soichi, Kasa, Kentaro, Nakajima, Yumi, Nagai, Satoshi, Sato, Kazuya

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Development of An Accurate Optical Proximity Correction System for 1 Gbit Dynamic Random Access Memory Fabrication von Sachiko Kobayashi, Sachiko Kobayashi, Taiga Uno, Taiga Uno, Kazuko Yamamoto, Kazuko Yamamoto, Satoshi Tanaka, Satoshi Tanaka, Toshiya Kotani, Toshiya Kotani, Soichi Inoue, Soichi Inoue, Hitoshi Higurashi, Hitoshi Higurashi, Susumu Watanabe, Susumu Watanabe, Mitsuhiro Yano, Mitsuhiro Yano, Shinichiro Ohki, Shinichiro Ohki, Kiyoshi Tsunakawa, Kiyoshi Tsunakawa

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Experimental evaluation of phase contrast lithography von FUJISAWA, T, TANAKA, S, INOUE, S

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Highly Accurate and Precise Measurement Technique for Effective Exposure Dose von Izuha, Kyoko, Fujisawa, Tadahito, Asano, Masafumi, Inoue, Soichi

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光リソグラフィの解像度の限界解像度を超えるナノインプリント技術開発 von 井上, 壮一, 櫻井, 淳平

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Highly Accurate Process Proximity Correction Based on Empirical Model for 0.18 µm Generation and Beyond von Kotani, Toshiya, Tanaka, Satoshi, Yamamoto, Kazuko, Kobayashi, Sachiko, Uno, Taiga, Inoue, Soichi

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Tolerance-Based Wafer Verification Methodologies with a Die-to-Database Inspection System von Hashimoto, Kohji, Usui, Satoshi, Yoshida, Kenji, Tanaka, Satoshi, Kotani, Toshiya, Nojima, Shigeki, Nagahama, Ichirota, Nagano, Osamu, Matsuoka, Yasuo, Yamazaki, Yuuichiro, Inoue, Soichi

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MEASUREMENT APPARATUS AND MEASUREMENT METHOD von KASA, Kentaro, TANIZAKI, Hiroyuki, INOUE, Soichi, TANAKA, Satoshi

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MEASUREMENT APPARATUS AND MEASUREMENT METHOD von KASA, Kentaro, TANIZAKI, Hiroyuki, INOUE, Soichi, TANAKA, Satoshi

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MEASURING DEVICE AND MEASURING METHOD von KASA, Kentaro, SHIRAKAWA, Hiroaki, TANIZAKI, Hiroyuki, TAKAKUWA, Manabu, INOUE, Soichi, FUMITA, Kaori, YOSHINO, Kiminori, TANAKA, Satoshi

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Clinical features of foreign-born tuberculosis patients treated at our hospital von Takikawa, Shuichi, Sugisaki, Katsunori, Inoue, Soichi, Yoshimatsu, Tetsuyuki, Otsu, Tatsuya

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Low k 1 Contact Hole Formation by Double Line and Space Formation Method with Contact Hole Mask and Dipole Illumination von Nakamura, Hiroko, Sato, Kazuya, Tanaka, Satoshi, Taniguchi, Yasuyuki, Abe, Junko, Mimotogi, Shoji, Inoue, Soichi

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Design intent utilization for lithography compliance check and layout refinement to improve manufacturability von Kobayashi, S., Ikeuchi, A., Kimura, K., Kotani, T., Tanaka, S., Suigen Kyoh, Maeda, S., Inoue, S.

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Simulation study on phase-shifting masks for isolated patterns von INOUE, S, TANAKA, Y, SATO, T, TAMAMUSHI, S, NAKASE, M

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