Collective modes in coupled semiconductor disk lasers in the case of whispering-gallery modes von Royz, M. A., Baranov, A. N., Imenkov, A. N., Burenina, D. S., Pivovarova, A. A., Monakhov, A. M., Grebenshchikova, E. A., Yakovlev, Yu. P.

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InAsSb/InAsSbP current-tunable laser with narrow spectral line width von Civiš, S., Kubát, P., Zelinger, Z., Horká, V., Imenkov, A.N., Kolchanova, N.M., Yakovlev, Y.P.

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Tunable 3.3 μm InAsSb/InAsSbP diode lasers: a new concept of fast lasing due to nonlinear optical effects von Yakovlev, Yu. P., Danilova, A. P., Imenkov, A. N., Kolchanova, N. M., Sherstnev, V. V.

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Light-Emitting Diodes Based on GaSb Alloys for the 1.6–4.4 μm Mid-Infrared Spectral Range von Danilova, T. N.

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Photovoltage and photocurrent in Pd–oxide–InP structures in a hydrogen medium von Imenkov, A. N., Grebenshchikova, E. A., Shutaev, V. A., Ospennikov, A. M., Sherstnev, V. V., Yakovlev, Yu. P.

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The spectral linewidth of tunable semiconductor InAsSb/InAsSbP lasers emitting at 3.2–3.6 μm (2800–3100  cm −1 ) von Imenkov, A. N., Kolchanova, N. M., Yakovlev, Yu. P., Kubát, P., Civiš, S.

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High-power LEDs based on InGaAsP/InP heterostructures von Rakovics, V., Imenkov, A. N., Sherstnev, V. V., Serebrennikova, O. Yu, Il’inskaya, N. D., Yakovlev, Yu. P.

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2.7–3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers von Baranov, A. N., Imenkov, A. N., Sherstnev, V. V., Yakovlev, Yu. P.

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Properties of GaSb-based LEDs with grid ohmic contacts von Imenkov, A. N., Grebenshchikova, E. A., Zhurtanov, B. E., Danilova, T. N., Sipovskaya, M. A., Vlasenko, N. V., Yakovlev, Yu. P.

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Transformation of a short-wavelength emission band of a double-charged intrinsic acceptor into a long-wavelength band in GaSb-based LEDs von Grebenshchikova, E. A., Imenkov, A. N., Zhurtanov, B. E., Danilova, T. N., Sipovskaya, M. A., Blasenko, N. V., Yakovlev, Yu. P.

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Electroluminescence properties of a whispering-gallery-mode laser with coupled disk cavities von Imenkov, A. N., Grebenshchikova, E. A., Sherstnev, V. V., Leonidov, A. A., Il’inskaya, N. D., Serebrennikova, O. Yu, Teissier, R., Baranov, A. N., Yakovlev, Yu. P.

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Single-mode fast-tunable lasers for laser-diode spectroscopy von Astakhova, A. P., Danilova, T. N., Imenkov, A. N., Kolchanova, N. M., Yakovlev, Yu. P.

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Interfacial and Interband Lasing in an InAs∕InAsSbP Heterostructure Grown by Vapor-Phase Epitaxy from Metal–Organic Compounds von Astakhova, A. P.

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Diode laser spectroscopy using two modes of an InAsSb/InAsSbP laser near 3.6 μm von Civiš, S., Imenkov, A.N., Danilova, A.P., Kolchanova, N.M., Sherstnev, V.V., Yakovlev, Y.P., Walters, A.D.

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Improvement in the quantum sensitivity of InAs/InAsSb/InAsSbP heterostructure photodiodes von Imenkov, A. N., Grebenshchikova, E. A., Starostenko, D. A., Sherstnev, V. V., Konovalov, G. G., Andreev, I. A., Yakovlev, Yu. P.

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High-Efficiency LEDs Based on GaInAsSb Solid Solutions with Reduced Arsenic Content in the Active Region von Zhurtanov, B. E.

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Properties of GaSb-based light-emitting diodes with chemically cut substrates von Grebenshchikova, E. A., Imenkov, A. N., Zhurtanov, B. E., Danilova, T. N., Chernyaev, A. V., Vlasenko, N. V., Yakovlev, Yu. P.

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Temperature dependence of the threshold current in quantum-well WGM lasers (2.0–2.5 μm) von Imenkov, A. N., Sherstnev, V. V., Kovalev, I. V., Il’inskaya, N. D., Serebrennikova, O. Yu, Teissier, R., Baranov, A. N., Yakovlev, Yu. P.

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Infrared light-emitting diodes based on GaInAsSb solid solutions grown from lead-containing solution-melts von Astakhova, A. P., Grebenshchikova, E. A., Ivanov, É. V., Imenkov, A. N., Kunitsyna, E. V., Parkhomenko, Ya. A., Yakovlev, Yu. P.

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Flattening of dynamic dielectric phase grating and single-mode lasing under the conditions of transverse oscillations of luminous flux von Astakhova, A. P., Danilova, T. N., Imenkov, A. N., Kolchanova, N. M., Yakovlev, Yu. P.

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