Study of the emission extraction efficiency of mesa-LEDs with a narrow-gap InAsSb active region von Grebenshchikova, E. A., Imenkov, A. N., Kizhaev, S. S., Golovin, A. S., Yakovlev, Yu. P.

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InAsSb/InAsSbP double heterostructure lasers for 3–4 μm spectral range von Astakhova, A.P., Imenkov, A.N., Danilova, T.N., Sherstnev, V.V., Yakovlev, Yu.P.

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Collective modes in coupled semiconductor disk lasers in the case of whispering-gallery modes von Royz, M. A., Baranov, A. N., Imenkov, A. N., Burenina, D. S., Pivovarova, A. A., Monakhov, A. M., Grebenshchikova, E. A., Yakovlev, Yu. P.

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InAsSb/InAsSbP current-tunable laser with narrow spectral line width von Civiš, S., Kubát, P., Zelinger, Z., Horká, V., Imenkov, A.N., Kolchanova, N.M., Yakovlev, Y.P.

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Long-wavelength photodiodes based on n-GaSb/n-GaInAsSb/p-AlGaAsSb heterostructures von Astakhova, A. P., Zhurtanov, B. E., Imenkov, A. N., Mikhailova, M. P., Sipovskaya, M. A., Stoyanov, N. D., Yakovlev, Yu. P.

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Tunable 3.3 μm InAsSb/InAsSbP diode lasers: a new concept of fast lasing due to nonlinear optical effects von Yakovlev, Yu. P., Danilova, A. P., Imenkov, A. N., Kolchanova, N. M., Sherstnev, V. V.

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High-efficiency LEDs based on n-GaSb/p-GaSb/n-GaInAsSb/P-AlGaAsSb type-II thyristor heterostructures von Stoyanov, N. D., Zhurtanov, B. E., Imenkov, A. N., Astakhova, A. P., Mikhaĭlova, M. P., Yakovlev, Yu. P.

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Spectral line width of the current-tunable lasers on the base of InAsSb/InAsSbP at low temperature von Imenkov, A. N., Kolchanova, N. M., Kubat, P., Tsivish, S., Yakovlev, Yu. P.

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InAsSb/InAsSbP double-heterostructure lasers emitting in the 3–4 µm spectral range von Danilova, T. N., Imenkov, A. N., Kolchanova, N. M., Yakovlev, Yu. P.

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Ultrafast frequency tuning in diode lasers based on InAsSb/InAsSbP heterostructures operating in the 3–4 μm spectral range von Astakhova, A. P., Danilova, T. N., Imenkov, A. N., Kalinina, K. V., Sipovskaya, M. A., Yakovlev, Yu. P.

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Photodiodes based on n-GaSb/n-GaInAsSb/p-AlGaAsSb heterostructures grown using rare-earth elements for the 1.1–2.4 μm spectral range von Imenkov, A. N., Zhurtanov, B. E., Astakhova, A. P., Kalinina, K. V., Mikhailova, M. P., Sipovskaya, M. A., Stoyanov, N. D.

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2.7–3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers von Baranov, A. N., Imenkov, A. N., Sherstnev, V. V., Yakovlev, Yu. P.

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InAsSb/InAsSbP double-heterostructure lasers emitting at 3–4 µm: Part I von Danilova, T. N., Imenkov, A. N., Sherstnev, V. V., Yakovlev, Yu. P.

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Light-Emitting Diodes Based on GaSb Alloys for the 1.6–4.4 μm Mid-Infrared Spectral Range von Danilova, T. N.

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High-power light-emitting diodes operating in the 1.9 to 2.1-µm spectral range von Danilova, T. N., Zhurtanov, B. E., Zakgeim, A. L., Il’inskaya, N. D., Imenkov, A. N., Saraev, O. N., Sipovskaya, M. A., Sherstnev, V. V., Yakovlev, Yu. P.

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Improving parameters of GaSb/GaInAsSb/AlGaAsSb photodiode structures with thin active regions for the 1.0–2.5 μm wavelength range von Astakhova, A. P., Zhurtanov, B. E., Imenkov, A. N., Mikhailova, M. P., Sipovskaya, M. A., Stoyanov, N. D., Yakovlev, Yu. P.

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Interfacial and Interband Lasing in an InAs∕InAsSbP Heterostructure Grown by Vapor-Phase Epitaxy from Metal–Organic Compounds von Astakhova, A. P.

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High-efficiency LEDs of 1.6–2.4 µm spectral range for medical diagnostics and environment monitoring von Stoyanov, N. D., Zhurtanov, B. E., Astakhova, A. P., Imenkov, A. N., Yakovlev, Yu. P.

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LEDs (λmax = 3.6 μm) with cone-shaped light-emitting surfaces von Grebenshchikova, E. A., Golovin, A. S., Imenkov, A. N., Kizhaev, S. S., Yakovlev, Yu. P.

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InAsSb/InAsSbP double heterostructure lasers for 3-4 micrometer spectral range von Astakhova, A P, Imenkov, A N, Danilova, T N, Sherstnev, V V, Yakovlev, Yu P

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