Recent progress of Na-flux method for GaN crystal growth von Mori, Yusuke, Imanishi, Masayuki, Murakami, Kosuke, Yoshimura, Masashi

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Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes von Rounds, Robert, Sarkar, Biplab, Sochacki, Tomasz, Bockowski, Michal, Imanishi, Masayuki, Mori, Yusuke, Kirste, Ronny, Collazo, Ramón, Sitar, Zlatko

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Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates von Hamachi, Takeaki, Tohei, Tetsuya, Hayashi, Yusuke, Imanishi, Masayuki, Usami, Shigeyoshi, Mori, Yusuke, Sakai, Akira

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Effects of pulse duration on laser-induced crystallization of urea from 300 to 1200 fs: impact of cavitation bubbles on crystal nucleation von Tsuri, Yuka, Maruyama, Mihoko, Tsukamoto, Katsuo, Adachi, Hiroaki, Takano, Kazufumi, Usami, Shigeyoshi, Imanishi, Masayuki, Yoshimura, Masashi, Yoshikawa, Hiroshi Y., Mori, Yusuke

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Trainable Projected Gradient Detector for Massive Overloaded MIMO Channels: Data-Driven Tuning Approach von Takabe, Satoshi, Imanishi, Masayuki, Wadayama, Tadashi, Hayakawa, Ryo, Hayashi, Kazunori

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Vacancy-type defects in bulk GaN grown by oxide vapor phase epitaxy probed using positron annihilation von Uedono, Akira, Takino, Junichi, Sumi, Tomoaki, Okayama, Yoshio, Imanishi, Masayuki, Ishibashi, Shoji, Mori, Yusuke

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Elastic constants of GaN grown by the oxide vapor phase epitaxy method von Fukuda, Hiroki, Nagakubo, Akira, Usami, Shigeyoshi, Imanishi, Masayuki, Mori, Yusuke, Ogi, Hirotsugu

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Terahertz time-domain ellipsometry with high precision for the evaluation of GaN crystals with carrier densities up to 1020 cm−3 von Agulto, Verdad C., Iwamoto, Toshiyuki, Kitahara, Hideaki, Toya, Kazuhiro, Mag-usara, Valynn Katrine, Imanishi, Masayuki, Mori, Yusuke, Yoshimura, Masashi, Nakajima, Makoto

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Quantitative analysis of calcium oxalate monohydrate and dihydrate for elucidating the formation mechanism of calcium oxalate kidney stones von Maruyama, Mihoko, Sawada, Koichi P, Tanaka, Yutaro, Okada, Atsushi, Momma, Koichi, Nakamura, Masanori, Mori, Ryota, Furukawa, Yoshihiro, Sugiura, Yuki, Tajiri, Rie, Taguchi, Kazumi, Hamamoto, Shuzo, Ando, Ryosuke, Tsukamoto, Katsuo, Takano, Kazufumi, Imanishi, Masayuki, Yoshimura, Masashi, Yasui, Takahiro, Mori, Yusuke

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Activation free energies for formation and dissociation of N–N, C–C, and C–H bonds in a Na–Ga melt von Kawamura, Takahiro, Imanishi, Masayuki, Yoshimura, Masashi, Mori, Yusuke, Morikawa, Yoshitada

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Thermodynamic analysis of oxide vapor phase epitaxy of GaN von Sakurai, Yuki, Usami, Shigeyoshi, Imanishi, Masayuki, Sumi, Tomoaki, Takino, Junichi, Okayama, Yoshio, Maruyama, Mihoko, Yoshimura, Masashi, Hata, Masahiko, Isemura, Masashi, Mori, Yusuke

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Identification of Burgers vectors of threading dislocations in freestanding GaN substrates via multiphoton-excitation photoluminescence mapping von Tsukakoshi, Mayuko, Tanikawa, Tomoyuki, Yamada, Takumi, Imanishi, Masayuki, Mori, Yusuke, Uemukai, Masahiro, Katayama, Ryuji

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Promotion of lateral growth of GaN crystals on point seeds by extraction of substrates from melt in the Na-flux method von Imanishi, Masayuki, Murakami, Kosuke, Yamada, Takumi, Kakinouchi, Keisuke, Nakamura, Kosuke, Kitamura, Tomoko, Okumura, Kanako, Yoshimura, Masashi, Mori, Yusuke

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Correlation between current leakage and structural properties of threading dislocations in GaN bulk single crystals grown using a Na-flux method von Hamachi, Takeaki, Tohei, Tetsuya, Imanishi, Masayuki, Mori, Yusuke, Sakai, Akira

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Fabrication of a 1.5-inch freestanding GaN substrate by selective dissolution of sapphire using Li after the Na-flux growth von Yamada, Takumi, Imanishi, Masayuki, Murakami, Kosuke, Nakamura, Kosuke, Yoshimura, Masashi, Mori, Yusuke

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Evaluation of dislocations under the electrodes of GaN pn diodes by X-ray topography von Kanechika, Masakazu, Yamaguchi, Satoshi, Imanishi, Masayuki, Mori, Yusuke

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Vacancy-type defects in bulk GaN grown by the Na-flux method probed using positron annihilation von Uedono, Akira, Imanishi, Masayuki, Imade, Mamoru, Yoshimura, Masashi, Ishibashi, Shoji, Sumiya, Masatomo, Mori, Yusuke

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Dramatic reduction of dislocations on a GaN point seed crystal by coalescence of bunched steps during Na-flux growth von Imanishi, Masayuki, Todoroki, Yuma, Murakami, Kosuke, Matsuo, Daisuke, Imabayashi, Hiroki, Takazawa, Hideo, Maruyama, Mihoko, Imade, Mamoru, Yoshimura, Masashi, Mori, Yusuke

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Evidence for Solution-Mediated Phase Transitions in Kidney Stones: Phase Transition Exacerbates Kidney Stone Disease von Maruyama, Mihoko, Tanaka, Yutaro, Momma, Koichi, Furukawa, Yoshihiro, Yoshikawa, Hiroshi Y., Tajiri, Rie, Nakamura, Masanori, Taguchi, Kazumi, Hamamoto, Shuzo, Ando, Ryosuke, Tsukamoto, Katsuo, Takano, Kazufumi, Imanishi, Masayuki, Usami, Shigeyoshi, Kohri, Kenjiro, Okada, Atsushi, Yasui, Takahiro, Yoshimura, Masashi, Mori, Yusuke

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Extreme reduction of on-resistance in vertical GaN p-n diodes by low dislocation density and high carrier concentration GaN wafers fabricated using oxide vapor phase epitaxy method von Takino, Junichi, Sumi, Tomoaki, Okayama, Yoshio, Kitamoto, Akira, Imanishi, Masayuki, Yoshimura, Masashi, Asai, Naomi, Ohta, Hiroshi, Mishima, Tomoyoshi, Mori, Yusuke

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