Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes von Rounds, Robert, Sarkar, Biplab, Sochacki, Tomasz, Bockowski, Michal, Imanishi, Masayuki, Mori, Yusuke, Kirste, Ronny, Collazo, Ramón, Sitar, Zlatko

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Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates von Hamachi, Takeaki, Tohei, Tetsuya, Hayashi, Yusuke, Imanishi, Masayuki, Usami, Shigeyoshi, Mori, Yusuke, Sakai, Akira

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Effects of pulse duration on laser-induced crystallization of urea from 300 to 1200 fs: impact of cavitation bubbles on crystal nucleation von Tsuri, Yuka, Maruyama, Mihoko, Tsukamoto, Katsuo, Adachi, Hiroaki, Takano, Kazufumi, Usami, Shigeyoshi, Imanishi, Masayuki, Yoshimura, Masashi, Yoshikawa, Hiroshi Y., Mori, Yusuke

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Trainable Projected Gradient Detector for Massive Overloaded MIMO Channels: Data-Driven Tuning Approach von Takabe, Satoshi, Imanishi, Masayuki, Wadayama, Tadashi, Hayakawa, Ryo, Hayashi, Kazunori

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Elastic constants of GaN grown by the oxide vapor phase epitaxy method von Fukuda, Hiroki, Nagakubo, Akira, Usami, Shigeyoshi, Imanishi, Masayuki, Mori, Yusuke, Ogi, Hirotsugu

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Activation free energies for formation and dissociation of N–N, C–C, and C–H bonds in a Na–Ga melt von Kawamura, Takahiro, Imanishi, Masayuki, Yoshimura, Masashi, Mori, Yusuke, Morikawa, Yoshitada

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Identification of Burgers vectors of threading dislocations in freestanding GaN substrates via multiphoton-excitation photoluminescence mapping von Tsukakoshi, Mayuko, Tanikawa, Tomoyuki, Yamada, Takumi, Imanishi, Masayuki, Mori, Yusuke, Uemukai, Masahiro, Katayama, Ryuji

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Correlation between current leakage and structural properties of threading dislocations in GaN bulk single crystals grown using a Na-flux method von Hamachi, Takeaki, Tohei, Tetsuya, Imanishi, Masayuki, Mori, Yusuke, Sakai, Akira

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Evaluation of dislocations under the electrodes of GaN pn diodes by X-ray topography von Kanechika, Masakazu, Yamaguchi, Satoshi, Imanishi, Masayuki, Mori, Yusuke

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Vacancy-type defects in bulk GaN grown by the Na-flux method probed using positron annihilation von Uedono, Akira, Imanishi, Masayuki, Imade, Mamoru, Yoshimura, Masashi, Ishibashi, Shoji, Sumiya, Masatomo, Mori, Yusuke

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Dramatic reduction of dislocations on a GaN point seed crystal by coalescence of bunched steps during Na-flux growth von Imanishi, Masayuki, Todoroki, Yuma, Murakami, Kosuke, Matsuo, Daisuke, Imabayashi, Hiroki, Takazawa, Hideo, Maruyama, Mihoko, Imade, Mamoru, Yoshimura, Masashi, Mori, Yusuke

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Effect of additional N2O gas on the suppression of polycrystal formation and high-rate GaN crystal growth by OVPE method von Shimizu, Ayumu, Kitamoto, Akira, Kamiyama, Masahiro, Tsuno, Shintaro, Ishibashi, Keiju, Usami, Shigeyoshi, Imanishi, Masayuki, Maruyama, Mihoko, Yoshimura, Masashi, Sumi, Tomoaki, Takino, Junichi, Okayama, Yoshio, Hata, Masahiko, Isemura, Masashi, Mori, Yusuke

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Suppression of newly generated threading dislocations at the regrowth interface of a GaN crystal by growth rate control in the Na-flux method von Yamauchi, Hyoga, Tandryo, Ricksen, Yamada, Takumi, Murakami, Kosuke, Usami, Shigeyoshi, Imanishi, Masayuki, Maruyama, Mihoko, Yoshimura, Masashi, Mori, Yusuke

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Influence of oxygen-related defects on the electronic structure of GaN von Ohata, Satoshi, Kawamura, Takahiro, Akiyama, Toru, Usami, Shigeyoshi, Imanishi, Masayuki, Yoshimura, Masashi, Mori, Yusuke, Sumi, Tomoaki, Takino, Junichi

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Effects of entrapped gas on the surface of a plastic ball induced by ultrasonic irradiation on the enhancement of crystallization of acetaminophen form II von Tsuri, Yuka, Inaoka, Nana, Maruyama, Mihoko, Tsukamoto, Katsuo, Adachi, Hiroaki, Yoshikawa, Hiroshi Y., Takano, Kazufumi, Imanishi, Masayuki, Yoshimura, Masashi, Mori, Yusuke

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Local current leakage at threading dislocations in GaN bulk single crystals grown by a modified Na-flux method von Hamachi, Takeaki, Tohei, Tetsuya, Imanishi, Masayuki, Mori, Yusuke, Sakai, Akira

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The impact of crystal phase transition on the hardness and structure of kidney stones von Michibata, Uta, Maruyama, Mihoko, Tanaka, Yutaro, Yoshimura, Masashi, Yoshikawa, Hiroshi Y., Takano, Kazufumi, Furukawa, Yoshihiro, Momma, Koichi, Tajiri, Rie, Taguchi, Kazumi, Hamamoto, Shuzo, Okada, Atsushi, Kohri, Kenjiro, Yasui, Takahiro, Usami, Shigeyoshi, Imanishi, Masayuki, Mori, Yusuke

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Anomalous dislocation annihilation behavior observed in a GaN crystal grown on point seeds by the Na-flux method von Imanishi, Masayuki, Okumura, Kanako, Nakamura, Kousuke, Kitamura, Tomoko, Kakinouchi, Keisuke, Murakami, Kosuke, Yoshimura, Masashi, Fujita, Yu, Tsusaka, Yoshiyuki, Matsui, Junji, Mori, Yusuke

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High-rate OVPE-GaN crystal growth at a very high temperature of 1300 °C von Shimizu, Ayumu, Usami, Shigeyoshi, Kamiyama, Masahiro, Kawanami, Itsuki, Kitamoto, Akira, Imanishi, Masayuki, Maruyama, Mihoko, Yoshimura, Masashi, Hata, Masahiko, Isemura, Masashi, Mori, Yusuke

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Fabrication of low-curvature 2 in. GaN wafers by Na-flux coalescence growth technique von Imade, Mamoru, Imanishi, Masayuki, Todoroki, Yuma, Imabayashi, Hiroki, Matsuo, Daisuke, Murakami, Kosuke, Takazawa, Hideo, Kitamoto, Akira, Maruyama, Mihoko, Yoshimura, Masashi, Mori, Yusuke

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