A 70 nm 16 Gb 16-Level-Cell NAND flash Memory von Shibata, N., Maejima, H., Isobe, K., Iwasa, K., Nakagawa, M., Fujiu, M., Shimizu, T., Honma, M., Hoshi, S., Kawaai, T., Kanebako, K., Yoshikawa, S., Tabata, H., Inoue, A., Takahashi, T., Shano, T., Komatsu, Y., Nagaba, K., Kosakai, M., Motohashi, N., Kanazawa, K., Imamiya, K., Nakai, H., Lasser, M., Murin, M., Meir, A., Eyal, A., Shlick, M.

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Semiconductor integrated circuit adapted to output pass/fail results of internal operations von Hosono, Koji, Kawai, Koichi, Nakamura, Hiroshi, Imamiya, Kenichi, Yamamura, Toshio

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A 125-mm(2) 1-Gb NAND flash memory with 10-MByte/s program speed von Imamiya, K, Nakamura, H, Himeno, T, Yarnamura, T, Ikehashi, T, Takeuchi, K, Kanda, K, Hosono, K, Futatsuyama, T, Kawai, K, Shirota, R, Arai, N, Arai, F, Hatakeyama, K, Hazama, H, Saito, M, Meguro, H, Conley, K, Quader, K

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SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAIL RESULTS OF INTERNAL OPERATIONS von NAKAMURA, Hiroshi, HOSONO, Koji, IMAMIYA, Kenichi, KAWAI, Koichi, YAMAMURA, Toshio

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Semiconductor integrated circuit adapted to output pass/fail results of internal operations von Hosono, Koji, Kawai, Koichi, Nakamura, Hiroshi, Imamiya, Kenichi, Yamamura, Toshio

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Semiconductor Memory Device Using Only Single-Channel Transistor to Apply Voltage to Selected Word Line von NAKAMURA HIROSHI, IMAMIYA KENICHI

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Semiconductor memory device using only single-channel transistor to apply voltage to selected word line von NAKAMURA HIROSHI, IMAMIYA KENICHI

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SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAIL RESULTS OF INTERNAL OPERATIONS von NAKAMURA, Hiroshi, HOSONO, Koji, IMAMIYA, Kenichi, KAWAI, Koichi, YAMAMURA, Toshio

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Semiconductor integrated circuit adapted to output pass/fail results of internal operations von Hosono, Koji, Kawai, Koichi, Nakamura, Hiroshi, Imamiya, Kenichi, Yamamura, Toshio

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SEMICONDUCTOR MEMORY DEVICE USING ONLY SINGLE-CHANNEL TRANSISTOR TO APPLY VOLTAGE TO SELECTED WORD LINE von NAKAMURA HIROSHI, IMAMIYA KENICHI

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EEPROM with increased reading speed von NAKAMURA HIROSHI, IMAMIYA KENICHI

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Semiconductor memory device using only single-channel transistor to apply voltage to selected word line von NAKAMURA HIROSHI, IMAMIYA KENICHI

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Semiconductor memory device capable of increasing writing speed von SHIBATA NOBORU, IMAMIYA KENICHI

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Non-volatile semiconductor memory device von Imamiya, Kenichi

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Non-volatile semiconductor memory device von IMAMIYA KENICHI

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Non-Volatile Semiconductor Memory Device von IMAMIYA KENICHI

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Potential detector and semiconductor integrated circuit von Imamiya, Kenichi

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Non-volatile semiconductor memory device von IMAMIYA KENICHI

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Potential detector and semiconductor integrated circuit von IMAMIYA KENICHI

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Non-volatile semiconductor memory device von Imamiya, Kenichi

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