Vacancy-type defects in bulk GaN grown by the Na-flux method probed using positron annihilation von Uedono, Akira, Imanishi, Masayuki, Imade, Mamoru, Yoshimura, Masashi, Ishibashi, Shoji, Sumiya, Masatomo, Mori, Yusuke

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Dramatic reduction of dislocations on a GaN point seed crystal by coalescence of bunched steps during Na-flux growth von Imanishi, Masayuki, Todoroki, Yuma, Murakami, Kosuke, Matsuo, Daisuke, Imabayashi, Hiroki, Takazawa, Hideo, Maruyama, Mihoko, Imade, Mamoru, Yoshimura, Masashi, Mori, Yusuke

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Growth of bulk GaN crystals by the Na-flux point seed technique von Imade, Mamoru, Maruyama, Mihoko, Yoshimura, Masashi, Mori, Yusuke

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Growth of GaN layers using Ga2O vapor synthesized from Ga2O3 and carbon von Kitamoto, Akira, Yamaguchi, Yohei, Tsuno, Shintaro, Ishibashi, Keiju, Gunji, Yoshikazu, Imanishi, Masayuki, Imade, Mamoru, Yoshimura, Masashi, Hata, Masahiko, Isemura, Masashi, Mori, Yusuke

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Fabrication of low-curvature 2 in. GaN wafers by Na-flux coalescence growth technique von Imade, Mamoru, Imanishi, Masayuki, Todoroki, Yuma, Imabayashi, Hiroki, Matsuo, Daisuke, Murakami, Kosuke, Takazawa, Hideo, Kitamoto, Akira, Maruyama, Mihoko, Yoshimura, Masashi, Mori, Yusuke

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Effect of flux composition ratio on the coalescence growth of GaN crystals by the Na-flux method von Honjo, Masatomo, Imanishi, Masayuki, Imabayashi, Hiroki, Nakamura, Kosuke, Murakami, Kosuke, Matsuo, Daisuke, Maruyama, Mihoko, Imade, Mamoru, Yoshimura, Masashi, Mori, Yusuke

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Growth of Large GaN Single Crystals on High-Quality GaN Seed by Carbon-Added Na Flux Method von Imade, Mamoru, Hirabayashi, Yasuhiro, Konishi, Yusuke, Ukegawa, Hiroshi, Miyoshi, Naoya, Yoshimura, Masashi, Sasaki, Takatomo, Kitaoka, Yasuo, Mori, Yusuke

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Effect of H2 carrier gas on the physical properties of a GaN layer grown using Ga2O vapor and NH3 von Bu, Yuan, Imade, Mamoru, Kitamoto, Akira, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke

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Coalescence Growth of Dislocation-Free GaN Crystals by the Na-Flux Method von Imanishi, Masayuki, Murakami, Kosuke, Imabayashi, Hiroki, Takazawa, Hideo, Todoroki, Yuma, Matsuo, Daisuke, Maruyama, Mihoko, Imade, Mamoru, Yoshimura, Masashi, Mori, Yusuke

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Increase in the growth rate of GaN crystals by using gaseous methane in the Na flux method von Murakami, Kosuke, Ogawa, Shogo, Imanishi, Masayuki, Imade, Mamoru, Maruyama, Mihoko, Yoshimura, Masashi, Mori, Yusuke

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Mechanism for enhanced single-crystal GaN growth in the C-assisted Na-flux method von Kawamura, Takahiro, Imabayashi, Hiroki, Maruyama, Mihoko, Imade, Mamoru, Yoshimura, Masashi, Mori, Yusuke, Morikawa, Yoshitada

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Effects of Al additives on growth of GaN polycrystals by the Na flux method von Imabayashi, Hiroki, Murakami, Kosuke, Matsuo, Daisuke, Honjo, Masatomo, Imanishi, Masayuki, Maruyama, Mihoko, Imade, Mamoru, Yoshimura, Masashi, Mori, Yusuke

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Habit control during growth on GaN point seed crystals by Na-flux method von Honjo, Masatomo, Imanishi, Masayuki, Imabayashi, Hiroki, Nakamura, Kosuke, Murakami, Kosuke, Matsuo, Daisuke, Maruyama, Mihoko, Imade, Mamoru, Yoshimura, Masashi, Mori, Yusuke

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Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3 von Imade, Mamoru, Bu, Yuan, Sumi, Tomoaki, Kitamoto, Akira, Yoshimura, Masashi, Sasaki, Takatomo, Imsemura, Masashi, Mori, Yusuke

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Improvement of crystallinity of GaN layers grown using Ga2O vapor synthesized from liquid Ga and H2O vapor von Yamaguchi, Yohei, Taniyama, Yuuki, Takatsu, Hiroaki, Kitamoto, Akira, Imade, Mamoru, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke

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Vapor-phase epitaxy of high-crystallinity GaN films using Ga2O vapor and NH3 von IMADE, Mamoru, KISHIMOTO, Hiroki, KAWAMURA, Fumio, YOSHIMURA, Masashi, KITAOKA, Yasuo, SASAKI, Takatomo, MORI, Yusuke

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Homoepitaxial growth of GaN crystals by Na-flux dipping method von Sato, Taro, Nakamura, Koshi, Imanishi, Masayuki, Murakami, Kosuke, Imabayashi, Hiroki, Takazawa, Hideo, Todoroki, Yuma, Matsuo, Daisuke, Imade, Mamoru, Maruyama, Mihoko, Yoshimura, Masashi, Mori, Yusuke

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Control of Growth Facets and Dislocation Propagation Behavior in the Na-Flux Growth of GaN von Imade, Mamoru, Hirabayashi, Yasuhiro, Miyoshi, Naoya, Yoshimura, Masashi, Kitaoka, Yasuo, Sasaki, Takatomo, Mori, Yusuke

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Control of GaN crystal habit by solution stirring in the Na-flux method von Murakami, Kosuke, Imade, Mamoru, Imanishi, Masayuki, Honjo, Masatomo, Imabayashi, Hiroki, Matsuo, Daisuke, Nakamura, Kosuke, Maruyama, Mihoko, Yoshimura, Masashi, Mori, Yusuke

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Dependence of polarity inversion on V/III ratio in −c-GaN growth by oxide vapor phase epitaxy von Taniyama, Yuki, Yamaguchi, Yohei, Takatsu, Hiroaki, Sumi, Tomoaki, Kitamoto, Akira, Imade, Mamoru, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke

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