Continuous Wave Operation of a Mid-Infrared Semiconductor Laser at Room Temperature von Beck, Mattias, Hofstetter, Daniel, Aellen, Thierry, Faist, Jérôme, Oesterle, Ursula, Ilegems, Marc, Gini, Emilio, Melchior, Hans

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Visible InGaN/GaN Quantum-Dot Materials and Devices von Grandjean, Nicolas, Ilegems, Marc

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Far-infrared (λ=88 μm) electroluminescence in a quantum cascade structure von Rochat, Michel, Faist, Jérôme, Beck, Mattias, Oesterle, Ursula, Ilegems, Marc

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Visible InGaN/GaN Quantum-Dot Materials and Devices : There has been rapid progress in light emitting diodes and lasers based on nitride semiconductors, with the development of nit... von GRANDJEAN, Nicolas, ILEGEMS, Marc

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Continuous wave operation of a 9.3 μm quantum cascade laser on a Peltier cooler von Hofstetter, Daniel, Beck, Mattias, Aellen, Thierry, Faist, Jérôme, Oesterle, Ursula, Ilegems, Marc, Gini, Emilio, Melchior, Hans

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Localized Epitaxy of GaN by HVPE on patterned Substrates von Parillaud, O, Wagner, V, Buehlmann, H J, Ilegems, Marc

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Rate-equation model for coupled-cavity surface-emitting lasers von Badilita, V., Carlin, J.-F., Ilegems, M., Panajotov, K.

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Preface: Phys. Status Solidi C 6/S2 von Grandjean, Nicolas, Ilegems, Marc, Suski, Tadek, Butté, Raphaël

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Far-field radiation pattern of red emitting thin-film resonant cavity LEDs von Joray, R., Ilegems, M., Stanley, R.P., Schmid, W., Butendeich, R., Wirth, R., Jaeger, A., Streubel, K.

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Electrically tunable, room-temperature quantum-cascade lasers von Müller, Antoine, Beck, Mattias, Faist, Jérôme, Oesterle, Ursula, Ilegems, Marc

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Buried heterostructure quantum cascade lasers with a large optical cavity waveguide von Beck, M., Faist, J., Oesterle, U., Ilegems, M., Gini, E., Melchior, H.

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Structural and electrooptical characteristics of quantum dots emitting at 1.3 μm on gallium arsenide von FIORE, Andrea, OESTERLE, Ursula, CANTONI, Marco, BOBARD, Fabienne, STANLEY, Ross P, HOUDRE, Romuald, LELARGE, Francois, ILEGEMS, Marc, BORRI, Paola, LANGBEIN, Wolfgang, BIRKEDAL, D, HVAM, Jørn M

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Gallium nitride templates and its related materials for electronic and photonic devices von Aggerstam, Thomas

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Magnetotransport of delta-doped In0.57Ga0.43As on InP(001) grown between 390 and 575° C by molecular beam epitaxy von Zervos, Matthew, Bryant, Adam, Elliott, Martin, Beck, Mathias, Ilegems, Marc

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Microcavity light emitting diodes as efficient planar light emitters for telecommunication applications von Ochoa, Daniel, Houdré, Romuald, Ilegems, Marc, Hanke, Christian, Borchert, Bernt

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Heat generation and dissipation in GaN-based light emitting devices von Figge, Stephan, Böttcher, Tim, Hommel, Detlef, Zellweger, Christoph, Ilegems, Marc

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Microcavity light emitting diodes as efficient planar light emitters for telecommunication applications : Microcavités et cristaux photoniques von OCHOA, Daniel, HOUDRE, Romuald, ILEGEMS, Marc, HANKE, Christian, BORCHERT, Bernt

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A quantum cascade laser based on an n-i-p-i superlattice von Faist, J., Muller, A., Beck, M., Hofstetter, D., Blaser, S., Oesterle, U., Ilegems, M.

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Low-frequency noise properties of selectively dry etched InP HEMT's von Duran, H.C., Ren, L., Beck, M., Py, M.A., Begems, M., Bachtold, W.

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Structural and electrooptical characteristics of quantum dots emitting at 1.3 micron on gallium arsenide von Fiore, Andrea, Oesterle, Ursula, Stanley, Ross P, Houdre, Romuald, Lelarge, Francois, Ilegems, Marc, Borri, Paola, Langbein, Wolfgang, Birkedal, D, Hvam, Jorn M

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