Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires von Lu, Weifang, Sone, Naoki, Goto, Nanami, Iida, Kazuyoshi, Suzuki, Atsushi, Han, Dong-Pyo, Iwaya, Motoaki, Tekeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

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MOVPE growth of n-GaN cap layer on GaInN/GaN multi-quantum shell LEDs von Goto, Nanami, Sone, Naoki, Iida, Kazuyoshi, Lu, Weifang, Suzuki, Atsushi, Murakami, Hideki, Terazawa, Mizuki, Ohya, Masaki, Kamiyama, Satoshi, Takeuchi, Tetsuya, Iwaya, Motoaki, Akasaki, Isamu

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Room temperature pulsed operation of nitride nanowire-based multi-quantum shell laser diodes by MOVPE von Okuno, Koji, Mizutani, Koichi, Iida, Kazuyoshi, Ohya, Masaki, Sone, Naoki, Lu, Weifang, Okuda, Renji, Miyamoto, Yoshiya, Ito, Kazuma, Kamiyama, Satoshi, Takeuchi, Tetsuya, Iwaya, Motoaki, Akasaki, Isamu

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Sapphire substrate off-angle and off-direction dependences on characteristics of AlGaN-based deep ultraviolet light-emitting diodes von Kojima, Hisanori, Ogasawara, Takuma, Kim, Myunghee, Saito, Yoshiki, Iida, Kazuyoshi, Koide, Norikatsu, Takeuchi, Tetsuya, Iwaya, Motoaki, Kamiyama, Satoshi, Akasaki, Isamu

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Structural and optical impacts of AlGaN undershells on coaxial GaInN/GaN multiple-quantum-shells nanowires von Lu, Weifang, Terazawa, Mizuki, Han, Dong-Pyo, Sone, Naoki, Goto, Nanami, Iida, Kazuyoshi, Murakami, Hedeki, Iwaya, Motoaki, Tekeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

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High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN von Nagamatsu, Kentaro, Okada, Narihito, Sugimura, Hiroki, Tsuzuki, Hirotoshi, Mori, Fumiaki, Iida, Kazuyoshi, Bando, Akira, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

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350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN von Iida, Kazuyoshi, Kawashima, Takeshi, Miyazaki, Atsushi, Kasugai, Hideki, Mishima, Syunsuke, Honshio, Akira, Miyake, Yasuto, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

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Epitaxial lateral overgrowth of AlxGa1-xN (x > 0.2) on sapphire and its application to UV-B-light-emitting devices von IIDA, Kazuyoshi, KAWASHIMA, Takeshi, IWAYA, Motoaki, KAMIYAMA, Satoshi, AMANO, Hiroshi, AKASAKI, Isamu, BANDOH, Akira

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Controlled synthesis of nonpolar GaInN/GaN multiple-quantum-shells on GaN nanowires by metal-organic chemical vapour deposition von Lu, Weifang, Goto, Nanami, Murakami, Hedeki, Sone, Naoki, Iida, Kazuyoshi, Terazawa, Mizuki, Han, Dong-Pyo, Iwaya, Motoaki, Tekeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

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Crystal Growth and Characterization of n‑GaN in a Multiple Quantum Shell Nanowire-Based Light Emitter with a Tunnel Junction von Miyamoto, Yoshiya, Lu, Weifang, Sone, Naoki, Okuda, Renji, Ito, Kazuma, Okuno, Koji, Mizutani, Koichi, Iida, Kazuyoshi, Ohya, Masaki, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

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MOVPE growth of Si-doped GaN cap layers embedding GaN nanowires with multiple-quantum shells von Okuno, Koji, Mizutani, Koichi, Iida, Kazuyoshi, Ohya, Masaki, Sone, Naoki, Lu, Weifang, Okuda, Renji, Miyamoto, Yoshiya, Ito, Kazuma, Kamiyama, Satoshi, Takeuchi, Tetsuya, Iwaya, Motoaki, Akasaki, Isamu

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Growth Defects in InGaN‐Based Multiple‐Quantum‐Shell Nanowires with Si‐Doped GaN Cap Layers and Tunnel Junctions von Okuno, Koji, Mizutani, Koichi, Iida, Kazuyoshi, Ohya, Masaki, Sone, Naoki, Lu, Weifang, Okuda, Renji, Miyamoto, Yoshiya, Ito, Kazuma, Kamiyama, Satoshi, Takeuchi, Tetsuya, Iwaya, Motoaki, Akasaki, Isamu

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Mechanism and enhancement of anti-parasitic-reaction catalytic activity of tungsten-carbide-coated graphite components for the growth of bulk GaN crystals von Nakamura, Daisuke, Iida, Kazuyoshi, Horibuchi, Kayo, Aoki, Yuko, Takahashi, Naoko, Mori, Yuto, Moriyama, Miki, Nitta, Shugo, Amano, Hiroshi

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High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure von Kasugai, Hideki, Miyake, Yasuto, Honshio, Akira, Mishima, Shunsuke, Kawashima, Takeshi, Iida, Kazuyoshi, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Kinoshita, Hiroyuki, Shiomi, Hiromu

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Improved Uniform Current Injection into Core‐Shell‐Type GaInN Nanowire Light‐Emitting Diodes by Optimizing Growth Condition and Indium‐Tin‐Oxide Deposition von Sone, Naoki, Suzuki, Atsushi, Murakami, Hideki, Goto, Nanami, Terazawa, Mizuki, Lu, Weifang, Han, Dong-Pyo, Iida, Kazuyoshi, Ohya, Masaki, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

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Fabrication and Characterization of Multiquantum Shell Light‐Emitting Diodes with Tunnel Junction von Murakami, Hideki, Suzuki, Atsushi, Nokimura, Kyohei, Takebayashi, Minoru, Goto, Nanami, Terazawa, Mizuki, Lu, Weifang, Sone, Naoki, Iida, Kazuyoshi, Ohya, Masaki, Kamiyama, Satoshi, Takeuchi, Tetsuya, Iwaya, Motoaki, Akasaki, Isamu

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Influence of silane flow rate on the structural and optical properties of GaN nanowires with multiple-quantum-shells von Sone, Naoki, Lu, Weifang, Miyamoto, Yoshiya, Okuda, Renji, Ito, Kazuma, Okuno, Koji, Mizutani, Koichi, Iida, Kazuyoshi, Ohya, Masaki, Han, Dong-Pyo, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

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Hybrid simulation of light extraction efficiency in multi-quantum-shell (MQS) NW (nanowire) LED with a current diffusion layer von Terazawa, Mizuki, Ohya, Masaki, Iida, Kazuyoshi, Sone, Naoki, Suzuki, Atsushi, Nokimura, Kyohei, Takebayashi, Minoru, Goto, Nanami, Murakami, Hideki, Kamiyama, Satoshi, Takeuchi, Tetsuya, Iwaya, Motoaki, Akasaki, Isamu

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Materials for Reducing Sound and Vibration von Iida, Kazuyoshi

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Visualization of Sound Field and the Trend: From a Microphone Sweep Method to Beam Forming Method von IIDA, Kazuyoshi

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