Discretization of flux densities in device simulations using optimum artificial diffusivity von Tang, Ting-Wei, Ieong, Mei-Kei

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Influence of hydrodynamic models on the prediction of submicrometer device characteristics von Ieong, Mei Kei, Tang, Ting-wei

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Distributed Algorithms for Three‐dimensionalSemiconductor Device Simulations von Ieong, Mei-Kei, Tang, Ting-Wei

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Comparison of raised and Schottky source/drain MOSFETs using a novel tunneling contact model von MeiKei Ieong, Solomon, P.M., Laux, S.E., Wong, H.-S.P., Chidambarrao, D.

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Quasi self-aligned source/drain FinFET process von Ieong, Mei-Kei, Ludwig, Thomas, Nowak, Edward J, Ouyang, Qiqing C

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Quasi self-aligned source/drain FinFET process von NOWAK EDWARD J, OUYANG QIQING C, IEONG MEI-KEI, LUDWIG THOMAS

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Influence of hydrodynamic models on the simulated characteristics of deep submicron SOI-MOSFETs von Mei-Kei Ieong, Ting-Wei Tang

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Use of source/drain asymmetry MOSFET devices in dynamic and analog circuits von KAN EDWIN CHIHUAN, WONG HON-SUM PHILIP, IEONG MEI KEI

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Re-examination of the hot-carrier transport model using spherical harmonic expansion of the Boltzmann transport equation von Ting-Wei Tang, Haitao Gan, MeiKei Ieong

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Use of source/drain asymmetry MOSFET devices in dynamic and analog circuits von Ieong, Mei Kei, Kan, Edwin Chih-chuan, Wong, Hon-Sum Philip

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