More-Than-Moore Devices and Integration for Semiconductors von Iacopi, Francesca, Balestra, Francis

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Evolution of epitaxial graphene layers on 3C SiC/Si (111) as a function of annealing temperature in UHV von Gupta, B., Notarianni, M., Mishra, N., Shafiei, M., Iacopi, F., Motta, N.

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Low dielectric constant materials for microelectronics von Maex, K., Baklanov, M. R., Shamiryan, D., lacopi, F., Brongersma, S. H., Yanovitskaya, Z. S.

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Low-k dielectric materials von Shamiryan, D, Abell, T, Iacopi, F, Maex, K

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Controlling the surface roughness of epitaxial SiC on silicon von Mishra, N., Hold, L., Iacopi, A., Gupta, B., Motta, N., Iacopi, F.

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The transition from 3C SiC(111) to graphene captured by Ultra High Vacuum Scanning Tunneling Microscopy von Gupta, B., Placidi, E., Hogan, C., Mishra, N., Iacopi, F., Motta, N.

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Effect of substrate polishing on the growth of graphene on 3C-SiC(111) Si(111) by high temperature annealing von Gupta, B, Di Bernardo, I, Mondelli, P, Della Pia, A, Betti, M G, Iacopi, F, Mariani, C, Motta, N

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Plasma-enhanced chemical vapour deposition growth of Si nanowires with low melting point metal catalysts: an effective alternative to Au-mediated growth von Iacopi, F, Vereecken, P M, Schaekers, M, Caymax, M, Moelans, N, Blanpain, B, Richard, O, Detavernier, C, Griffiths, H

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Short-ranged structural rearrangement and enhancement of mechanical properties of organosilicate glasses induced by ultraviolet radiation von Iacopi, F., Travaly, Y., Eyckens, B., Waldfried, C., Abell, T., Guyer, E. P., Gage, D. M., Dauskardt, R. H., Sajavaara, T., Houthoofd, K., Grobet, P., Jacobs, P., Maex, K.

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Challenges in the implementation of low-k dielectrics in the back-end of line von Hoofman, R.J.O.M., Verheijden, G.J.A.M., Michelon, J., Iacopi, F., Travaly, Y., Baklanov, M.R., Tökei, Zs, Beyer, G.P.

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Sidewall damage in silica-based low- k material induced by different patterning plasma processes studied by energy filtered and analytical scanning TEM von Richard, O., Iacopi, F., Bender, H., Beyer, G.

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Compressive stress relaxation through buckling of a low- k polymer-thin cap layer system von Iacopi, F., Brongersma, S. H., Maex, K.

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Plasma assisted growth of nanotubes and nanowires von Griffiths, H., Xu, C., Barrass, T., Cooke, M., Iacopi, F., Vereecken, P., Esconjauregui, S.

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Ultraviolet-Assisted Curing of Organosilicate Glass Low-k Dielectric by Excimer Lamps von Eslava, Salvador, Iacopi, F., Urbanowicz, A. M., Kirschhock, Christine E. A., Maex, Karen, Martens, Johan A., Baklanov, Mikhail R.

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Thermomechanical properties of thin organosilicate glass films treated with ultraviolet-assisted cure von Iacopi, F., Beyer, G., Travaly, Y., Waldfried, C., Gage, D.M., Dauskardt, R.H., Houthoofd, K., Jacobs, P., Adriaensens, P., Schulze, K., Schulz, S.E., List, S., Carlotti, G.

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Low-leakage epitaxial graphene field-effect transistors on cubic silicon carbide on silicon von Pradeepkumar, A., Cheng, H. H., Liu, K. Y., Gebert, M., Bhattacharyya, S., Fuhrer, M. S., Iacopi, F.

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Time evolution of graphene growth on SiC as a function of annealing temperature von Zarotti, F., Gupta, B., Iacopi, F., Sgarlata, A., Tomellini, M., Motta, N.

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Challenges for structural stability of ultra-low- k-based interconnects von Iacopi, F, Brongersma, S.H, Vandevelde, B, O'Toole, M, Degryse, D, Travaly, Y, Maex, K

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Stress corrosion of organosilicate glass films in aqueous environments: Role of pH von Iacopi, F., Elia, C., Fournier, T., Sinapi, F., Travaly, Y.

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Evidence of a highly compressed nanolayer at the epitaxial silicon carbide interface with silicon von Iacopi, Francesca, Brock, Ryan E., Iacopi, Alan, Hold, Leonie, Dauskardt, Reinhold H.

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