Different III-V semiconductor nanowires with quantum dots on silicon: growth by molecular-beam epitaxy and properties von Reznik, R.R., Kotlyar, K.P., Shtrom, I.V., Samsonenko, Yu.B., Khrebtov, A.I., Cirlin, G.E.

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GaN nanowires on Si (111) substrates via molecular beam epitaxy: growth, electronic and optical properties von Bolshakov, A.D., Fedorov, V.V., Sapunov, G.A., Mozharov, A.M., Dvoreckaia, L.N., Shugurov, K., Shkoldin, V., Shtrom, I.V., Mukhin, M.S., Cirlin, G.E., Mukhin, I.S.

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Optical properties of zinc telluride with cadmium telluride submonolayers von Agekyan, V. F., Serov, A. Yu, Filosofov, N. G., Shtrom, I. V., Karczewski, G.

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Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate von Shtrom, I. V., Filosofov, N. G., Agekian, V. F., Smirnov, M. B., Serov, A. Yu, Reznik, R. R., Kudryavtsev, K. E., Cirlin, G. E.

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Surface passivation of GaAs nanowires by the atomic layer deposition of AlN von Shtrom, I. V., Bouravleuv, A. D., Samsonenko, Yu. B., Khrebtov, A. I., Soshnikov, I. P., Reznik, R. R., Cirlin, G. E., Dhaka, V., Perros, A., Lipsanen, H.

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Composite system based on CdSe/ZnS quantum dots and GaAs nanowires von Khrebtov, A. I., Talalaev, V. G., Werner, P., Danilov, V. V., Artemyev, M. V., Novikov, B. V., Shtrom, I. V., Panfutova, A. S., Cirlin, G. E.

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Photovoltaic properties of GaAs:Be nanowire arrays von Bouravleuv, A. D., Beznasyuk, D. V., Gilstein, E. P., Tchernycheva, M., De Luna Bugallo, A., Rigutti, L., Yu, L., Proskuryakov, Yu, Shtrom, I. V., Timofeeva, M. A., Samsonenko, Yu. B., Khrebtov, A. I., Cirlin, G.

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Specific features of Raman spectra of III–V nanowhiskers von Karpov, S. V., Novikov, B. V., Smirnov, M. B., Davydov, V. Yu, Smirnov, A. N., Shtrom, I. V., Cirlin, G. E., Bouravleuv, A. D., Samsonenko, Yu. B.

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Emission sources based on hydrothermal ZnO nanostructures von S.A. Kadinskaya, V.M. Kondratev, A.V. Nikolaeva, E.S. Zavyalova, D.S. Gets, I.Kh. Akopyan, A.Yu. Serov, M.E. Labzovskaya, S.V. Mikushev, B.V. Novikov, I.V. Shtrom, A.D. Bolshakov

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