Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels von Sangaré, Paul, Ducournau, Guillaume, Grimbert, Bertrand, Brandli, Virginie, Faucher, Marc, Gaquière, Christophe, Íñiguez-de-la-Torre, Ana, Íñiguez-de-la-Torre, Ignacio, Millithaler, J. F., Mateos, Javier, González, Tomas

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Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs von Paz-Martínez, Gaudencio, Íñiguez-de-la-Torre, Ignacio, Sánchez-Martín, Héctor, Novoa-López, José Antonio, Hoel, Virginie, Cordier, Yvon, Mateos, Javier, González, Tomás

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A Closed-Form Expression for the Frequency-Dependent Microwave Responsivity of Transistors Based on the I – V Curve and S-Parameters von Paz-Martínez, Gaudencio, Artillan, Philippe, Mateos, Javier, Rochefeuille, Edouard, González, Tomás, Íñiguez-de-la-Torre, Ignacio

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Hybrid AI-Thermal Model Trained via Monte Carlo Simulations to Study Self-Heating Effects von Garcia-Sanchez, Sergio, Iniguez-de-la-Torre, Ignacio, Gonzalez, Tomas, Mateos, Javier

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Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range von Paz-Martinez, Gaudencio, Iniguez-de-la-Torre, Ignacio, Sanchez-Martin, Hector, Gonzalez, Tomas, Mateos, Javier

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On the Effect of Low-Energy Electron Irradiation in the RF Responsivity of GaN Nanodiodes von Perez-Martin, Elsa, Iniguez-de-la-Torre, Ignacio, Gonzalez, Tomas, Mateos, Javier

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Monte Carlo Study of Gunn Oscillations in Geometrically Shaped Planar Gunn Diodes Based on Doped GaN: Influence of Geometry, Intervalley Energy, and Temperature von Garcia-Sanchez, Sergio, Iniguez-de-la-Torre, Ignacio, Perez, Susana, Gonzalez, Tomas, Mateos, Javier

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Nonlinear nanochannels for room temperature terahertz heterodyne detection von Torres, Jeremie, Nouvel, Philippe, Penot, Alexandre, Varani, Luca, Sangaré, Paul, Grimbert, Bertrand, Faucher, Marc, Ducournau, Guillaume, Gaquière, Christophe, Iñiguez-de-la-Torre, Ignacio, Mateos, Javier, Gonzalez, Tomas

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Multiport Square Law Detectors: Responsivity Matrix Model and Direct Determination of the Optimum Injection Regime von Artillan, Philippe, Iniguez-de-la-Torre, Ignacio, Paz-Martinez, Gaudencio, Rochefeuille, Edouard, Garcia-Sanchez, Sergio, Gonzalez, Tomas, Mateos, Javier

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Analysis of the THz Responsivity of AlGaN/GaN HEMTs by Means of Monte Carlo Simulations von Garcia-Sanchez, Sergio, Iniguez-de-la-Torre, Ignacio, Paz-Martinez, Gaudencio, Artillan, Philippe, Gonzalez, Tomas, Mateos, Javier

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High-Frequency Microwave Detection With GaN HEMTs in the Subthreshold Regime von Paz-Martinez, Gaudencio, Iniguez-de-la-Torre, Ignacio, Artillan, Philippe, Sanchez-Martin, Hector, Garcia-Sanchez, Sergio, Gonzalez, Tomas, Mateos, Javier

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Small-Signal Equivalent Circuit Model as a Tool for Optimizing Millimeter-Wave Detection With FETs von Paz-Martinez, Gaudencio, Iniguez-de-la-Torre, Ignacio, Artillan, Philippe, Rochefeuille, Edouard, Garcia-Sanchez, Sergio, Gonzalez, Tomas, Mateos, Javier

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Influence of Surface States in AlGaN/GaN Nanodiodes Analyzed by Preconditioned Transient Current Measurements von Sanchez-Martin, Hector, Cotimos Nunes, Luis, Iniguez-de-la-Torre, Ignacio, Perez-Martin, Elsa, Perez, Susana, Mateos, Javier, Gonzalez, Tomas, Carlos Pedro, Jose

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Room Temperature Direct and Heterodyne Detection of 0.28-0.69-THz Waves Based on GaN 2-DEG Unipolar Nanochannels von Daher, Carlos, Torres, Jeremie, Iniguez-de-la-Torre, Ignacio, Nouvel, Philippe, Varani, Luca, Sangare, Paul, Ducournau, Guillaume, Gaquiere, Christophe, Mateos, Javier, Gonzalez, Tomas

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On the Asymmetry of Resistive Switching Transitions von Vinuesa, Guillermo, García, Héctor, Pérez, Eduardo, Wenger, Christian, Íñiguez-de-la-Torre, Ignacio, González, Tomás, Dueñas, Salvador, Castán, Helena

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Exploring Digital Logic Design Using Ballistic Deflection Transistors Through Monte Carlo Simulations von Íñiguez-de-la-Torre, Ignacio, Purohit, S., Kaushal, V., Margala, M., Mufei Gong, Sobolewski, R., Wolpert, D., Ampadu, P., González, T., Mateos, J.

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Experiences on the Design, Creation, and Analysis of Multimedia Content to Promote Active Learning von Rengel, Raúl, Pascual, Elena, Íñiguez-de-la-Torre, Ignacio, Martín, María J., Vasallo, Beatriz G.

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Nonlinear electron properties of an InGaAs/InAlAs-based ballistic deflection transistor: Room temperature DC experiments and numerical simulations von Kaushal, Vikas, Iñiguez-de-la-Torre, Ignacio, Margala, Martin

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Small-signal equivalent circuit model of GaN-based nanodiodes at low temperature including trap-related low frequency dispersion von Pérez-Martín, E., González, T., Iñiguez-de-la-Torre, I., Mateos, J.

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On the effect of δ-doping in self-switching diodes von Westlund, A., Iñiguez-de-la-Torre, I., Nilsson, P.-Å., González, T., Mateos, J., Sangaré, P., Ducournau, G., Gaquière, C., Desplanque, L., Wallart, X., Grahn, J.

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