Threshold Switching of Ag-Ga2Te3 Selector with High Endurance for Applications to Cross-Point Arrays von Kim, Jaeyeon, Lee, Jimin, Kang, Minkyu, Sohn, Hyunchul

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Effect of Pt top electrode deposition on the valence state and resistance switching behavior of NbO2-x von Lee, Jimin, Kim, Jaeyeon, Kim, Taeho, Sohn, Hyunchul

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Positive effects of a Schottky-type diode on unidirectional resistive switching devices von Lee, Dong Kyu, Kim, Gun Hwan, Sohn, Hyunchul, Yang, Min Kyu

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Effect of Nitrogen Doping on Threshold Voltage in Amorphous Ga2Te3 for Application of Selector Devices von Lee, Dayoon, Kim, Taeho, Kim, Jaeyeon, Sohn, Hyunchul

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Ti-doped alumina based reliable resistive switching in sub-μA regime von Lee, Dong Kyu, Kim, Gun Hwan, Sohn, Hyunchul, Yang, Min Kyu

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Ovonic threshold switching in polycrystalline zinc telluride thin films deposited by RF sputtering von Kim, Taeho, Kim, Youngjae, Lee, Ingwan, Lee, Dayoon, Sohn, Hyunchul

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Locally formed conductive filaments in an amorphous Ga2Te3 ovonic threshold switching device von Kim, Jaeyeon, Kim, Wansun, Kim, Jusung, Sohn, Hyunchul

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Highly reliable threshold switching behavior of amorphous Ga2Te3 films deposited by RF sputtering von Lee, Dayoon, Kim, Taeho, Sohn, Hyunchul

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Analogue Artificial Synaptic Performance of Self‐Rectifying Resistive Switching Device von Seo, Hyun Kyu, Ryu, Jin Joo, Lee, Su Yeon, Jeon, Kanghyoek, Sohn, Hyunchul, Kim, Gun Hwan, Yang, Min Kyu

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Emulation of spike-timing dependent plasticity in nano-scale phase change memory von Kang, Dae-Hwan, Jun, Hyun-Goo, Ryoo, Kyung-Chang, Jeong, Hongsik, Sohn, Hyunchul

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RESET-first unipolar resistance switching behavior in annealed Nb2O5 films von Lee, Kyumin, Kim, Jonggi, Mok, In-Su, Na, Heedo, Ko, Dae-Hong, Sohn, Hyunchul, Lee, Sunghoon, Sinclair, Robert

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Effect of thermal annealing on resistance switching characteristics of Pt/ZrO2/TiN stacks von Kim, Jonggi, Lee, Kyumin, Kim, Yonjae, Na, Heedo, Ko, Dae-Hong, Sohn, Hyunchul, Lee, Sunghoon

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Ultrahigh selective etching of Si3N4 films over SiO2 films for silicon nitride gate spacer etching von Lee, Sunghoon, Oh, Jinho, Lee, Kyumin, Sohn, Hyunchul

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Effect of La doping on dielectric constant and tetragonality of ZrO2 thin films deposited by atomic layer deposition von Jeong, Juyoung, Han, Yoogeun, Sohn, Hyunchul

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RESET-first bipolar resistive switching due to redox reaction in ALD HfO2 films von Kim, Jonggi, Lee, Sunghoon, Lee, Kyumin, Na, Heedo, Mok, In-Su, Kim, Youngjae, Ko, Dae-Hong, Sohn, Hyunchul

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Effect of La Spatial Uniformity on Ferroelectric Properties of HfO2 Films Deposited by Atomic Layer Deposition Method von Jeong, Juyoung, Han, Yoogeun, Joo, Jaeyoung, Sohn, Hyunchul

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Effect of La Spatial Uniformity on Ferroelectric Properties of HfO 2 Films Deposited by Atomic Layer Deposition Method von Jeong, Juyoung, Han, Yoogeun, Joo, Jaeyoung, Sohn, Hyunchul

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Electroforming and threshold switching characteristics of NbOx films with crystalline NbO2 phase von Lee, Jimin, Kim, Jaeyeon, Jeong, Juyoung, Sohn, Hyunchul

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Reset-First and Multibit-Level Resistive-Switching Behavior of Lanthanum Nickel Oxide (LaNiO 3-x ) Thin Films von Kim, Daewoo, Lee, Jeongwoo, Kim, Jaeyeon, Sohn, Hyunchul

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Optimized chalcogenide medium for inherently activated resistive switching device von Ryu, Jin Joo, Jeon, Kanghyeok, Eom, Taeyong, Yang, Min Kyu, Sohn, Hyunchul, Kim, Gun Hwan

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