A 1.2 V 30 nm 3.2 Gb/s/pin 4 Gb DDR4 SDRAM With Dual-Error Detection and PVT-Tolerant Data-Fetch Scheme von SOHN, Kyomin, NA, Taesik, LEE, Ki-Won, PARK, Jun-Seok, LEE, Jongeun, LEE, Byunghyun, JUN, Inwoo, PARK, Juseop, PARK, Junghwan, CHOI, Hundai, KIM, Sanghee, CHUNG, Haeyoung, SONG, Indal, CHOI, Young, JUNG, Dae-Hee, KIM, Byungchul, CHOI, Jung-Hwan, JANG, Seong-Jin, KIM, Chi-Wook, LEE, Jung-Bae, JOO SUN CHOI, SHIM, Yong, BAE, Wonil, KANG, Sanghee, LEE, Dongsu, JUNG, Hangyun, HYUN, Seokhun, JEOUNG, Hanki

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Bulk-Si photonics technology for DRAM interface [Invited] von Byun, Hyunil, Bok, Jinkwon, Cho, Kwansik, Cho, Keunyeong, Choi, Hanmei, Choi, Jinyong, Choi, Sanghun, Han, Sangdeuk, Hong, Seokyong, Hyun, Seokhun, Jeong, T. J., Ji, Ho-Chul, Joe, In-Sung, Kim, Beomseok, Kim, Donghyun, Kim, Junghye, Kim, Jeong-Kyoum, Kim, Kiho, Kim, Seong-Gu, Kong, Duanhua, Kuh, Bongjin, Kwon, Hyuckjoon, Lee, Beomsuk, Lee, Hocheol, Lee, Kwanghyun, Lee, Shinyoung, Nam, Jeongsik, Nejadmalayeri, Amir, Park, Yongsang, Parmar, Sunil, Pyo, Junghyung, Shin, Dongjae, Shin, Joonghan, Shin, Yong-hwack, Suh, Sung-Dong, Yoon, Honggoo, Park, Yoondong, Choi, Junghwan, Ha, Kyoung-Ho, Jeong, Gitae

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MEMORY DEVICE, MEMORY SYSTEM, AND OPERATION METHOD OF MEMORY DEVICE von Lee, Changkyo, Cho, Hyun-Yoon, Sohn, Young-Soo, Son, Young-Hoon, Ha, Kyung-Soo, Lee, Donghun, Oh, Ki-Seok, Moon, Daesik, Hyun, Seokhun

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Memory device, memory system, and operation method of memory device von Lee, Changkyo, Cho, Hyun-Yoon, Sohn, Young-Soo, Son, Young-Hoon, Ha, Kyung-Soo, Lee, Donghun, Oh, Ki-Seok, Moon, Daesik, Hyun, Seokhun

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Delay locked loop circuit and operation method thereof von HYUN SEOKHUN, CHOI JUNGHWAN

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Delay locked loop circuit and operation method thereof von Hyun, Seokhun, Choi, Junghwan

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MEMORY DEVICE, MEMORY SYSTEM, AND OPERATION METHOD OF MEMORY DEVICE von HYUN, Seokhun, LEE, Changkyo, HA, Kyung-Soo, CHO, Hyun-Yoon, OH, Ki-Seok, MOON, Daesik, LEE, DONGHUN, SOHN, Young-Soo, SON, Young-Hoon

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Memory device performing ZQ calibration, memory system, and operation method of memory device von Lee, Changkyo, Cho, Hyun-Yoon, Sohn, Young-Soo, Son, Young-Hoon, Ha, Kyung-Soo, Lee, Donghun, Oh, Ki-Seok, Moon, Daesik, Hyun, Seokhun

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A 10 Gbit/s Si CMOS transimpedance amplifier with an integrated MSM photodetector for optical interconnections von Indal Song, Sang-Woo Seo, Seokhun Hyun, Daeik Kim, Sa Huang, Brooke, M., Jokerst, N.M., Brown, A.

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Delay locked loop circuit and operation method thereof von HYUN SEOKHUN, CHOI JUNGHWAN

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MEMORY DEVICE, MEMORY SYSTEM, AND OPERATION METHOD OF MEMORY DEVICE von Lee, Changkyo, Cho, Hyun-Yoon, Sohn, Young-Soo, Son, Young-Hoon, Ha, Kyung-Soo, Lee, Donghun, Oh, Ki-Seok, Moon, Daesik, Hyun, Seokhun

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A Heterogeneous Dual DLL and Quantization error minimized ZQ calibration for 30nm 1.2V 4Gb 3.2Gb/s/pin DDR4 SDRAM von Taesik Na, Yong Shim, Indal Song, Jeong-Kyoum Kim, Seokhun Hyun, Jun-Bae Kim, Jung-Hwan Choi, Chi-Wook Kim, Jung-Bae Lee, Joo Sun Choi

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MEMORY DEVICE MEMORY SYSTEM AND OEPRATION METHOD OF MEMORY DEVICE von CHO HYUN YOON, HYUN SEOKHUN, HA KYUNG SOO, SON YOUNG HOON, LEE DONGHUN, OH KI SEOK, LEE CHANGKYO, MOON DAESIK, SOHN YOUNG SOO

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MEMORY DEVICE, MEMORY SYSTEM, AND OPERATION METHOD OF MEMORY DEVICE von HYUN SEOKHUN, CHO HYUN-YOON, OH KI-SEOK, LEE DONGHUN, LEE CHANGKYO, HA KYUNG-SOO, MOON DAESIK, SON YOUNG-HOON, SOHN YOUNG-SOO

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Growth Properties of Carbon Nanowalls on Nickel and Titanium Interlayers von Tran Thi, May, Kwon, Seokhun, Kang, Hyunil, Kim, Jung-Hyun, Yoon, Yong-Kyu, Choi, Wonseok

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Association of Longitudinal Trajectories of Insulin Resistance With Adverse Renal Outcomes von Yang, Seokhun, Kwak, Soongu, Song, You-Hyun, Han, Seung Seok, Lee, Hye Sun, Kang, Shinae, Lee, Seung-Pyo

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Comparison of 3- to 6-Month Versus 12-Month Dual Antiplatelet Therapy After Coronary Intervention Using the Contemporary Drug-Eluting Stents With Ultrathin Struts: The HOST-IDEA Ra... von Han, Jung-Kyu, Hwang, Doyeon, Yang, Seokhun, Park, Sang-Hyeon, Kang, Jeehoon, Yang, Han-Mo, Park, Kyung Woo, Kang, Hyun-Jae, Koo, Bon-Kwon, Hur, Seung-Ho, Kim, Weon, Kim, Seok Yeon, Park, Sang-Hyun, Han, Seung Hwan, Kim, Sang-Hyun, Shin, Sanghoon, Kim, Yong Hoon, Park, Kyungil, Lee, Namho, Lee, Seung Jin, Kim, Jin Won, Kim, Hyo-Soo

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Fractional Flow Reserve or Intravascular Ultrasonography to Guide PCI von Koo, Bon-Kwon, Hu, Xinyang, Kang, Jeehoon, Zhang, Jinlong, Jiang, Jun, Hahn, Joo-Yong, Nam, Chang-Wook, Doh, Joon-Hyung, Lee, Bong-Ki, Kim, Weon, Huang, Jinyu, Jiang, Fan, Zhou, Hao, Chen, Peng, Tang, Lijiang, Jiang, Wenbing, Chen, Xiaomin, He, Wenming, Ahn, Sung-Gyun, Yoon, Myeong-Ho, Kim, Ung, Lee, Joo-Myung, Hwang, Doyeon, Ki, You-Jeong, Shin, Eun-Seok, Kim, Hyo-Soo, Tahk, Seung-Jea, Wang, Jian’an

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De novo malignancy risk in patients undergoing the first percutaneous coronary intervention: A nationwide population-based cohort study von Kwak, Soongu, Choi, You-Jung, Kwon, Soonil, Lee, Seo-Young, Yang, Seokhun, Moon, Inki, Lee, Hyun-Jung, Lee, Heesun, Park, Jun-Bean, Han, Kyungdo, Kim, Yong-Jin, Kim, Hyung-Kwan

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Abstract 15324: Biodegradable Polymer Ultrathin Sirolimus-Eluting Stent is Associated With Better Outcomes Compared With Polymer-Free Ultrathin Sirulimus-Eluting Stent in Complex P... von Han, Jung-Kyu, Park, Sang-Hyeon, Hwang, Doyeon, Yang, Seokhun, Kang, Jeehoon, Yang, Han-Mo, Park, Kyung W, Kang, Hyun-jae, Koo, Bon-Kwon, Kim, Hyo-Soo

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