Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors von Lee, Jeong-Min, Cho, In-Tak, Lee, Jong-Ho, Kwon, Hyuck-In

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Demonstration of high-performance p-type tin oxide thin-film transistors using argon-plasma surface treatments von Bae, Sang-Dae, Kwon, Soo-Hun, Jeong, Hwan-Seok, Kwon, Hyuck-In

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Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors von Hong, Sae-Young, Kim, Hee-Joong, Kim, Dae-Hwan, Jeong, Ha-Yun, Song, Sang-Hun, Cho, In-Tak, Noh, Jiyong, Yun, Pil Sang, Lee, Seok-Woo, Park, Kwon-Shik, Yoon, SooYoung, Kang, In Byeong, Kwon, Hyuck-In

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Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors von Heo, Jae Sang, Jo, Jeong-Wan, Kang, Jingu, Jeong, Chan-Yong, Jeong, Hu Young, Kim, Sung Kyu, Kim, Kwanpyo, Kwon, Hyuck-In, Kim, Jaekyun, Kim, Yong-Hoon, Kim, Myung-Gil, Park, Sung Kyu

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Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Tr... von Choi, Sungju, Park, Jingyu, Hwang, Seong‐Hyun, Kim, Changwook, Kim, Yong‐Sung, Oh, Saeroonter, Baeck, Ju Heyuck, Bae, Jong Uk, Noh, Jiyong, Lee, Seok‐Woo, Park, Kwon‐Shik, Kim, Jeom‐Jae, Yoon, Soo Young, Kwon, Hyuck‐In, Kim, Dae Hwan

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Improvement of Long-Term Durability and Bias Stress Stability in p-Type SnO Thin-Film Transistors Using a SU-8 Passivation Layer von Han, Young-Joon, Choi, Yong-Jin, Cho, In-Tak, Jin, Sung Hun, Lee, Jong-Ho, Kwon, Hyuck-In

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Simultaneous Detection of Dopamine and Uric Acid on Indium Tin Oxides Modified with Cost‐effective Gas‐phase Synthesized Single Walled Carbon Nanotubes von Khan, Md. Mohibul Islam, Baek, Geun Woo, Kim, Kyuwon, Kwon, Hyuck‐In, Jin, Sung Hun

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Radiation-Tolerant p-Type SnO Thin-Film Transistors von Jeong, Ha-Yun, Kwon, Soo-Hun, Joo, Hyo-Jun, Shin, Min-Gyu, Jeong, Hwan-Seok, Kim, Dae-Hwan, Kwon, Hyuck-In

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Environment-Dependent Bias Stress Stability of P-Type SnO Thin-Film Transistors von Han, Young-Joon, Choi, Yong-Jin, Jeong, Chan-Yong, Lee, Daeun, Song, Sang-Hun, Kwon, Hyuck-In

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Charge Transport Mechanism in p-Channel Tin Monoxide Thin-Film Transistors von Kim, Hee-Joong, Jeong, Chan-Yong, Bae, Sang-Dae, Lee, Jeong-Hwan, Kwon, Hyuck-In

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Enhanced Electrical Performance and Stability in Zinc Oxynitride Thin-Film Transistors via Sequential Ultraviolet and Thermal Treatment von Jeong, Hwan-Seok, Kim, Dae-Hwan, Kwon, Hyuck-In

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Effects of Post-Deposition Thermal Annealing Temperature on Electrical Properties of ZnON Thin-Film Transistors von Jeong, Hun, Jeong, Hwan-Seok, Kim, Dae-Hwan, Jeong, Chan-Yong, Kwon, Hyuck-In

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Analytical Current and Capacitance Models for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors von Bae, Minkyung, Lee, Kyung Min, Cho, Eou-Sik, Kwon, Hyuck-In, Kim, Dong Myong, Kim, Dae Hwan

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Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices von Lee, Jung-Kyu, Jung, Sunghun, Park, Jinwon, Chung, Sung-Woong, Sung Roh, Jae, Hong, Sung-Joo, Hwan Cho, Il, Kwon, Hyuck-In, Hyeong Park, Chan, Park, Byung-Gook, Lee, Jong-Ho

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Determination of Interface and Bulk Trap Densities in High-Mobility p-type WSe2 Thin-Film Transistors von Hee-Joong Kim, Dae-Hwan Kim, Chan-Yong Jeong, Jeong-Hwan Lee, Hyuck-In Kwon

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Development of high temperature operation silicon based MOSFET for harsh environment application von Kwon, Ikhyeon, Kwon, Hyuck-In, Cho, Il Hwan

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Effects of air-annealing on the electrical properties of p-type tin monoxide thin-film transistors von Cho, In-Tak, U, Myeonghun, Song, Sang-Hun, Lee, Jong-Ho, Kwon, Hyuck-In

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Investigation of Carrier Transport Mechanism in High Mobility ZnON Thin-Film Transistors von Jeong, Chan-Yong, Kim, Hee-Joong, Kim, Dae-Hwan, Kim, Hyun-Suk, Kim, Tae Sang, Seon, Jong-Baek, Lee, Sunhee, Kim, Dae Hwan, Kwon, Hyuck-In

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Electrical Instability of p-Channel SnO Thin-Film Transistors Under Light Illumination von Lee, Jeong-Hwan, Choi, Yong-Jin, Jeong, Chan-Yong, Jung, Dong-Kyu, Ham, Soohoon, Kwon, Hyuck-In

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A subthreshold current model for nanoscale short channel junctionless MOSFETs applicable to symmetric and asymmetric double-gate structure von Jin, Xiaoshi, Liu, Xi, Kwon, Hyuck-In, Lee, Jung-Hee, Lee, Jong-Ho

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