Promoting biomass electrooxidation via modulating proton and oxygen anion deintercalation in hydroxide von He, Zuyun, Hwang, Jinwoo, Gong, Zhiheng, Zhou, Mengzhen, Zhang, Nian, Kang, Xiongwu, Han, Jeong Woo, Chen, Yan

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LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates von Rafique, Subrina, Karim, Md Rezaul, Johnson, Jared M., Hwang, Jinwoo, Zhao, Hongping

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Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor von Krishnamoorthy, Sriram, Xia, Zhanbo, Joishi, Chandan, Zhang, Yuewei, McGlone, Joe, Johnson, Jared, Brenner, Mark, Arehart, Aaron R., Hwang, Jinwoo, Lodha, Saurabh, Rajan, Siddharth

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Perspective on atomic scale investigation of point and extended defects in gallium oxide von Huang, Hsien-Lien, Chae, Christopher, Hwang, Jinwoo

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Evidence of the Topological Hall Effect in Pt/Antiferromagnetic Insulator Bilayers von Cheng, Yang, Yu, Sisheng, Zhu, Menglin, Hwang, Jinwoo, Yang, Fengyuan

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MOCVD epitaxy of β-(AlxGa1−x)2O3 thin films on (010) Ga2O3 substrates and N-type doping von Anhar Uddin Bhuiyan, A F M, Feng, Zixuan, Johnson, Jared M., Chen, Zhaoying, Huang, Hsien-Lien, Hwang, Jinwoo, Zhao, Hongping

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High current density 2D/3D MoS2/GaN Esaki tunnel diodes von Krishnamoorthy, Sriram, Lee, Edwin W., Lee, Choong Hee, Zhang, Yuewei, McCulloch, William D., Johnson, Jared M., Hwang, Jinwoo, Wu, Yiying, Rajan, Siddharth

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Remote epitaxy through graphene enables two-dimensional material-based layer transfer von Kim, Yunjo, Cruz, Samuel S., Lee, Kyusang, Alawode, Babatunde O., Choi, Chanyeol, Song, Yi, Johnson, Jared M., Heidelberger, Christopher, Kong, Wei, Choi, Shinhyun, Qiao, Kuan, Almansouri, Ibraheem, Fitzgerald, Eugene A., Kong, Jing, Kolpak, Alexie M., Hwang, Jinwoo, Kim, Jeehwan

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Deterministic switching of a perpendicularly polarized magnet using unconventional spin–orbit torques in WTe2 von Kao, I-Hsuan, Muzzio, Ryan, Zhang, Hantao, Zhu, Menglin, Gobbo, Jacob, Yuan, Sean, Weber, Daniel, Rao, Rahul, Li, Jiahan, Edgar, James H., Goldberger, Joshua E., Yan, Jiaqiang, Mandrus, David G., Hwang, Jinwoo, Cheng, Ran, Katoch, Jyoti, Singh, Simranjeet

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Experimental determination of the band offsets at the UWBG p-LiGa5O8/Ga2O3 interface von Zhang, Kaitian, Thirupakuzi Vangipuram, Vijay Gopal, Chae, Christopher, Hwang, Jinwoo, Zhao, Hongping

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Interband tunneling for hole injection in III-nitride ultraviolet emitters von Zhang, Yuewei, Krishnamoorthy, Sriram, Johnson, Jared M., Akyol, Fatih, Allerman, Andrew, Moseley, Michael W., Armstrong, Andrew, Hwang, Jinwoo, Rajan, Siddharth

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Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs von Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Johnson, Jared M., Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Hwang, Jinwoo, Rajan, Siddharth

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Imaging characteristics of young age breast cancer (YABC) focusing on pathologic correlation and disease recurrence von Lee, Jeongmin, Kim, Sung Hun, Kang, Bong Joo, Lee, Ahwon, Park, Woo-Chan, Hwang, Jinwoo

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Correlation between stoichiometry, strain, and metal-insulator transitions of NdNiO3 films von Hauser, Adam J., Mikheev, Evgeny, Moreno, Nelson E., Hwang, Jinwoo, Zhang, Jack Y., Stemmer, Susanne

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Atomic scale mechanism of β to γ phase transformation in gallium oxide von Huang, Hsien-Lien, Johnson, Jared M., Chae, Christopher, Senckowski, Alexander, Wong, Man Hoi, Hwang, Jinwoo

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Substantial lifetime enhancement for Si-based photoanodes enabled by amorphous TiO2 coating with improved stoichiometry von Dong, Yutao, Abbasi, Mehrdad, Meng, Jun, German, Lazarus, Carlos, Corey, Li, Jun, Zhang, Ziyi, Morgan, Dane, Hwang, Jinwoo, Wang, Xudong

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Active interface characteristics of heterogeneously integrated GaAsSb/Si photodiodes von Muduli, Manisha, Xia, Yongkang, Lee, Seunghyun, Gajowski, Nathan, Chae, Chris, Rajan, Siddharth, Hwang, Jinwoo, Arafin, Shamsul, Krishna, Sanjay

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Carbon recovery from wasted aqueous-phase bio-oil to fuel precursors through aldol-condensation reaction: A comprehensive review von Choi, Il-Ho, Hwang, Jinwoo, Han, Jeong Woo, Hwang, Kyung-Ran

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β-Ga2O3 MESFETs with insulating Mg-doped buffer grown by plasma-assisted molecular beam epitaxy von Dheenan, Ashok V., McGlone, Joe F., Kalarickal, Nidhin Kurian, Huang, Hsien-Lien, Brenner, Mark, Hwang, Jinwoo, Ringel, Steven A., Rajan, Siddharth

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In situ MOCVD growth and band offsets of Al2O3 dielectric on β-Ga2O3 and β-(AlxGa1−x)2O3 thin films von Bhuiyan, A F M Anhar Uddin, Meng, Lingyu, Huang, Hsien-Lien, Hwang, Jinwoo, Zhao, Hongping

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