CALCIUM CHLORIDE ADMINISTRATION DURING ELECTROMECHANICAL DISSOCIATION: A BLIND EXPERIMENTAL STUDY von Blecic, Serge, Backer, Daniel De, Huynh, Chin Huy, Domb, Marc, Deleuze, Michel, Luypaert, Pascal, Vincent, Jean-Louis

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Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors von Quang Ho Luc, Shou Po Cheng, Po Chun Chang, Huy Binh Do, Jin Han Chen, Minh Thien Huu Ha, Sa Hoang Huynh, Hu, Chenming Calvin, Yueh Chin Lin, Chang, Edward Yi

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In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment von Luc, Quang Ho, Yang, Kun Sheng, Lin, Jia Wei, Chang, Chia Chi, Do, Huy Binh, Huynh, Sa Hoang, Ha, Minh Thien Huu, Nguyen, Tuan Anh, Lin, Yueh Chin, Hu, Chenming, Chang, Edward Yi

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Antimelanogenic Activity of Ocotillol‐Type Saponins from Panax vietnamensis von Minh Nguyen, Hien, Truong Nguyen, Huy, Win, Nwet, Piow Wong, Chin, Vu Huynh, Kim Long, Hoang, Nhat Nam, Do, Kiep Minh, Thi Nguyen, Hoai, Viet Ho, Duc, Duc Nguyen, Minh, Morita, Hiroyuki

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Investigation of Mo/Ti/AlN/HfO2 High-k Metal Gate Stack for Low Power Consumption InGaAs NMOS Device Application von Huy Binh Do, Quang Ho Luc, Minh Thien Huu Ha, Sa Hoang Huynh, Tuan Anh Nguyen, Chenming Hu, Yueh Chin Lin, Chang, Edward Yi

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Methods for Extracting Flat Band Voltage in the InGaAs High Mobility Materials von Huy Binh Do, Quang Ho Luc, Minh Thien Huu Ha, Sa Hoang Huynh, Chenming Hu, Yueh Chin Lin, Yi Chang, Edward

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Investigation of Multilayer TiNi Alloys as the Gate Metal for nMOS In0.53Ga0.47As von Huy Binh Do, Quang Ho Luc, Minh Thien Huu Ha, Sa Hoang Huynh, Chenming Calvin Hu, Yueh Chin Lin, Yi Chang, Edward

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Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices von Do, Huy Binh, Luc, Quang Ho, Ha, Minh Thien Huu, Huynh, Sa Hoang, Nguyen, Tuan Anh, Lin, Yueh Chin, Chang, Edward Yi

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Investigation of Mo/Ti/AlN/HfO 2 High-k Metal Gate Stack for Low Power Consumption InGaAs NMOS Device Application von Do, Huy Binh, Luc, Quang Ho, Ha, Minh Thien Huu, Huynh, Sa Hoang, Nguyen, Tuan Anh, Hu, Chenming, Lin, Yueh Chin, Chang, Edward Yi

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Investigation of Multilayer TiNi Alloys as the Gate Metal for nMOS In 0.53 Ga 0.47 As von Do, Huy Binh, Luc, Quang Ho, Ha, Minh Thien Huu, Huynh, Sa Hoang, Hu, Chenming Calvin, Lin, Yueh Chin, Chang, Edward Yi

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In 0.53 Ga 0.47 As FinFET and GAA-FET With Remote-Plasma Treatment von Luc, Quang Ho, Yang, Kun Sheng, Lin, Jia Wei, Chang, Chia Chi, Do, Huy Binh, Huynh, Sa Hoang, Ha, Minh Thien Huu, Nguyen, Tuan Anh, Lin, Yueh Chin, Hu, Chenming, Chang, Edward Yi

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Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO sub(2)/In sub(0.53)Ga sub(0.47)As Metal-Oxide-Semiconductor Field-Effect Transistors von Luc, Quang Ho, Cheng, Shou Po, Chang, Po Chun, Do, Huy Binh, Chen, Jin Han, Ha, Minh Thien Huu, Huynh, Sa Hoang, Hu, Chenming Calvin, Lin, Yueh Chin, Chang, Edward Yi

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