Wide Spectral Photoresponse of Layered Platinum Diselenide-Based Photodiodes von Yim, Chanyoung, McEvoy, Niall, Riazimehr, Sarah, Schneider, Daniel S, Gity, Farzan, Monaghan, Scott, Hurley, Paul K, Lemme, Max C, Duesberg, Georg S

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Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2 von Mirabelli, Gioele, McGeough, Conor, Schmidt, Michael, McCarthy, Eoin K., Monaghan, Scott, Povey, Ian M., McCarthy, Melissa, Gity, Farzan, Nagle, Roger, Hughes, Greg, Cafolla, Attilio, Hurley, Paul K., Duffy, Ray

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Coexistence of Negative and Positive Photoconductivity in Few‐Layer PtSe2 Field‐Effect Transistors von Grillo, Alessandro, Faella, Enver, Pelella, Aniello, Giubileo, Filippo, Ansari, Lida, Gity, Farzan, Hurley, Paul K., McEvoy, Niall, Di Bartolomeo, Antonio

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Isotropic conduction and negative photoconduction in ultrathin PtSe2 films von Urban, Francesca, Gity, Farzan, Hurley, Paul K., McEvoy, Niall, Di Bartolomeo, Antonio

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Design principles for maximizing photovoltage in metal-oxide-protected water-splitting photoanodes von Scheuermann, Andrew G., Lawrence, John P., Kemp, Kyle W., Ito, T., Walsh, Adrian, Chidsey, Christopher E. D., Hurley, Paul K., McIntyre, Paul C.

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Physics-based modelling of MoS2: the layered structure concept von Mirabelli, Gioele, Hurley, Paul K, Duffy, Ray

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Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer von Bolshakov, Pavel, Zhao, Peng, Azcatl, Angelica, Hurley, Paul K., Wallace, Robert M., Young, Chadwin D.

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Insights into Multilevel Resistive Switching in Monolayer MoS2 von Bhattacharjee, Shubhadeep, Caruso, Enrico, McEvoy, Niall, Ó Coileáin, Cormac, O’Neill, Katie, Ansari, Lida, Duesberg, Georg S, Nagle, Roger, Cherkaoui, Karim, Gity, Farzan, Hurley, Paul K

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Rhenium-doped MoS2 films von Hallam, Toby, Monaghan, Scott, Gity, Farzan, Ansari, Lida, Schmidt, Michael, Downing, Clive, Cullen, Conor P., Nicolosi, Valeria, Hurley, Paul K., Duesberg, Georg S.

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Defective ZrSe2: a promising candidate for spintronics applications von Kheirabadi, Sharieh Jamalzadeh, Behzadi, Fahimeh, Gity, Farzan, Hurley, Paul K, Khorrami, Soroush Karimi, Behroozi, Mohammadreza, Sanaee, Maryam, Ansari, Lida

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Defective ZrSe 2 : a promising candidate for spintronics applications von Kheirabadi, Sharieh Jamalzadeh, Behzadi, Fahimeh, Gity, Farzan, Hurley, Paul K, Khorrami, Soroush Karimi, Behroozi, Mohammadreza, Sanaee, Maryam, Ansari, Lida

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Multilayer WS2 for low-power visible and near-infrared phototransistors von Pelella, Aniello, Intonti, Kimberly, Durante, Ofelia, Kumar, Arun, Viscardi, Loredana, De Stefano, Sebastiano, Romano, Paola, Giubileo, Filippo, Neill, Hazel, Patil, Vilas, Ansari, Lida, Roycroft, Brendan, Hurley, Paul K., Gity, Farzan, Di Bartolomeo, Antonio

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Dual-gate MoS2 transistors with sub-10 nm top-gate high-k dielectrics von Bolshakov, Pavel, Khosravi, Ava, Zhao, Peng, Hurley, Paul K., Hinkle, Christopher L., Wallace, Robert M., Young, Chadwin D.

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The Role of Oxide Traps Aligned With the Semiconductor Energy Gap in MOS Systems von Caruso, Enrico, Lin, Jun, Monaghan, Scott, Cherkaoui, Karim, Gity, Farzan, Palestri, Pierpaolo, Esseni, David, Selmi, Luca, Hurley, Paul K.

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Doping of ultra-thin Si films: Combined first-principles calculations and experimental study von Gity, Farzan, Meaney, Fintan, Curran, Anya, Hurley, Paul K., Fahy, Stephen, Duffy, Ray, Ansari, Lida

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An investigation of capacitance-voltage hysteresis in metal/high- k /In0.53Ga0.47As metal-oxide-semiconductor capacitors von Lin, Jun, Gomeniuk, Yuri Y., Monaghan, Scott, Povey, Ian M., Cherkaoui, Karim, O'Connor, Éamon, Power, Máire, Hurley, Paul K.

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Emulating synaptic response in n- and p-channel MoS2 transistors by utilizing charge trapping dynamics von Bhattacharjee, Shubhadeep, Wigchering, Rient, Manning, Hugh G., Boland, John. J., Hurley, Paul K.

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Lightweight versus heavyweight mesh in laparoscopic inguinal hernia repair: a meta-analysis von Currie, Andrew, Andrew, Helen, Tonsi, Alfredo, Hurley, Paul R., Taribagil, Sanjay

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Isolating the Photovoltaic Junction: Atomic Layer Deposited TiO2–RuO2 Alloy Schottky Contacts for Silicon Photoanodes von Hendricks, Olivia L, Scheuermann, Andrew G, Schmidt, Michael, Hurley, Paul K, McIntyre, Paul C, Chidsey, Christopher E. D

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Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance-voltage analysis von Zhao, Peng, Khosravi, Ava, Azcatl, Angelica, Bolshakov, Pavel, Mirabelli, Gioele, Caruso, Enrico, Hinkle, Christopher L, Hurley, Paul K, Wallace, Robert M, Young, Chadwin D

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