An improved formula for the deflection of light by a massive object von Hurkx, Fred

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Extensive Investigation of Time-Dependent Breakdown of GaN-HEMTs Submitted to OFF-State Stress von Meneghini, Matteo, Rossetto, Isabella, Hurkx, Fred, Sonsky, Jan, Croon, Jeroen A., Meneghesso, Gaudenzio, Zanoni, Enrico

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Effect of Resistance Drift on the Activation Energy for Crystallization in Phase Change Memory von Ahn, Chiyui, Lee, Byoungil, Jeyasingh, Rakesh G. D, Asheghi, Mehdi, Hurkx, Fred, Goodson, Kenneth E, Wong, H.-S. Philip

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Effect of Resistance Drift on the Activation Energy for Crystallization in Phase Change Memory von Ahn, Chiyui, Lee, Byoungil, Jeyasingh, Rakesh G. D., Asheghi, Mehdi, Hurkx, Fred, Goodson, Kenneth E., Wong, H.-S. Philip

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Barrier Height Variation in Ni-Based AlGaN/GaN Schottky Diodes von Hajlasz, Marcin, Donkers, Johan J. T. M., Pandey, Saurabh, Hurkx, Fred, Hueting, Raymond J. E., Gravesteijn, Dirk J.

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Resistance and Threshold Switching Voltage Drift Behavior in Phase-Change Memory and Their Temperature Dependence at Microsecond Time Scales Studied Using a Micro-Thermal Stage von SangBum Kim, Byoungil Lee, Asheghi, Mehdi, Hurkx, Fred, Reifenberg, John P, Goodson, Kenneth E, Wong, H.-S Philip

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Investigation of surface charges and traps in gallium nitride/aluminium gallium nitride/gallium nitride high-voltage transistors via measurements and technology computer-aided desi... von Longobardi, Giorgia, Udrea, Florin, Sque, Stephen, Croon, Jeroen, Hurkx, Fred, Šonský, Jan

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Modelling 2DEG charges in AlGaN/GaN heterostructures von Longobardi, G., Udrea, F., Sque, S., Croon, J., Hurkx, F., Napoli, E., Sonsky, J.

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Design and analyses of bias current circuits for operation at output voltages above BVCEO von VEENSTRA, Hugo, HURKX, Fred, VAN GOOR, Dave, BREKELMANS, Hans

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NANODRAHT-TUNNELTRANSISTOR von HURKX, FRED, AGARWAL, PRABHAT

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NANOWIRE TUNNELING TRANSISTOR von HURKX, FRED, AGARWAL, PRABHAT

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Nanowire tunneling transistor von Hurkx, Fred, Agarwal, Prabhat

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Nanowire tunneling transistor von HURKX FRED, AGARWAL PRABHAT

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NANOWIRE TUNNELING TRANSISTOR von HURKX FRED, AGARWAL PRABHAT

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NANOWIRE TUNNELING TRANSISTOR von HURKX, FRED, AGARWAL, PRABHAT

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NANOWIRE TUNNELING TRANSISTOR von HURKX, FRED, AGARWAL, PRABHAT

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Anomalous behavior of surface leakage currents in heavily doped gated-diodes von Hurkx, F., Peek, H.L., Slotboom, J.W., Windgassen, R.A.

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Low-Power, Ultra-Low Capacitance Bipolar Transistor Compatible with Mainstream CMOS von van der Wel, Wim, Koster, Ronald, Jansen, Sander, Hurkx, Fred, Bladt, Ed

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Poly-ridge emitter transistor (FRET): simple low-power option to a bipolar process von van der Wel, W., Koster, R., Jansen, S., Bladt, E., Hurkx, F., Baltus, P.

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