Growth and characterization of an In0.53Ga0.47As-based Metal-Oxide-Semiconductor Capacitor (MOSCAP) structure on 300mm on-axis Si (001) wafers by MOCVD von Orzali, Tommaso, Vert, Alexey, Kim, Tae-Woo, Hung, P.Y., Herman, Joshua L., Vivekanand, Saikumar, Huang, Gensheng, Kelman, Max, Karim, Zia, Hill, Richard J.W., Rao, Satyavolu S. Papa

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Spatial Distributions of Trapping Centers in \hbox/\hbox Gate Stack von Heh, D., Young, C.D., Brown, G.A., Hung, P.Y., Diebold, A., Vogel, E.M., Bernstein, J.B., Bersuker, G.

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Determination of Free Electron Density in Sequentially Doped In x Ga 1-x As by Raman Spectroscopy von Kort, Kenneth R., Hung, P.Y., Loh, Wei-Yip, Bersuker, Gennadi, Banerjee, Sarbajit

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Raman scattering study of LO phonon–plasmon coupled modes in p-type InGaAs von Cuscó, Ramon, Domènech-Amador, Núria, Hung, P.Y., Loh, Wei-Yip, Droopad, R., Artús, Luis

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Determination of Free Electron Density in Sequentially Doped InxGa1-xAs by Raman Spectroscopy von Kort, Kenneth R., Hung, P.Y., Loh, Wei-Yip, Bersuker, Gennadi, Banerjee, Sarbajit

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Spatial distributions of trapping centers in HfO2/SiO2 gate stack von HEH, Dawei, YOUNG, Chadwin D, BROWN, George A, HUNG, P. Y, DIEBOLD, Alain, VOGEL, Eric M, BERNSTEIN, Joseph B, BERSUKER, Gennadi

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High mobility CMOS transistors on Si/SiGe heterostructure channels von Oh, Jungwoo, Jeon, Kanghoon, Lee, Se-Hoon, Huang, Jeff, Hung, P.Y., Ok, Injo, Sassman, Barry, Ko, Dae-Hong, Kirsch, Paul, Jammy, Raj

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The ν1 + ν5 Band of HCCN: Determination of the ν5 Vibrational Energy von Han, Jia-xiang, Hung, P.Y., DeSain, John, Jones, W.E., Curl, R.F.

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An Efficient Technique to Quantify Dislocation Densities Imaged Through Annular Dark Field Scanning Transmission Electron Microscopy von Schamp, C.T., Hung, P.Y., Min, B.G.

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Application of Inline X-ray Metrology for Defect Characterization of III-V/Si Heterostructures von Hung, P.Y., Wormington, Matthew, Matney, Kevin, Ryan, Paul, Dunn, Kathleen, Wang, Albert, Hill, Richard, Wong, Man-Hoi, Price, Jimmy, Wang, Wei-E, Bersuker, Gennadi

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Optical band gaps and composition dependence of hafnium–aluminate thin films grown by atomic layer chemical vapor deposition von Nguyen, N. V., Sayan, S., Levin, I., Ehrstein, J. R., Baumvol, I. J. R., Driemeier, C., Krug, C., Wielunski, L., Hung, P. Y., Diebold, Alain

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Gate first high-k/metal gate stacks with zero SiOx interface achieving EOT=0.59nm for 16nm application von Huang, J., Heh, D., Sivasubramani, P., Kirsch, P.D., Bersuker, G., Gilmer, D.C., Quevedo-Lopez, M.A., Hussain, M.M., Majhi, P., Lysaght, P., Park, H., Goel, N., Young, C., Park, C.S., Park, C., Cruz, M., Diaz, V., Hung, P.Y., Price, J., Tseng, H.-H., Jammy, R.

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SIMS depth profiling of advanced gate dielectric materials von Bennett, J., Gondran, C., Sparks, C., Hung, P.Y., Hou, A.

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Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs von Loh, W.-Y., Hung, P.Y., Coss, B.E., Kalra, P., Injo Ok, Smith, G., Kang, C.-Y., Lee, S.-H., Oh, J., Sassman, B., Majhi, P., Kirsch, P., Tseng, H.-H., Jammy, R.

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A novelty universal adaptive seating system for dragon boating von Lee, Helen W-M, Kwan, Hung-Hei, Cheng, Bill F-C, Hung, Joanna P-Y, Ng, Colm K-L

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Mechanisms limiting EOT scaling and gate leakage currents of high-k/metal gate stacks directly on SiGe and a method to enable sub-1nm EOT von Huang, J., Kirsch, P.D., Oh, J., Lee, S.H., Price, J., Majhi, P., Harris, H.R., Gilmer, D.C., Kelly, D.Q., Sivasubramani, P., Bersuker, G., Heh, D., Young, C., Park, C.S., Tan, Y.N., Goel, N., Park, C., Hung, P.Y., Lysaght, P., Choi, K.J., Cho, B.J., Tseng, H-H., Lee, B.H., Jammy, R.

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Characterization of Atomic Layer Deposition using X-Ray Reflectometry von Windover, Donald, Cline, James P., Armstrong, Nicholas, National Institute of Standards and Technology, Gaithersburg, MD, Hung, P.Y., Diebold, Alain

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Tetragonal Phase Stabilization by Doping as an Enabler of Thermally Stable HfO2 based MIM and MIS Capacitors for sub 50nm Deep Trench DRAM von Boscke, T.S., Govindarajan, S., Fachmann, C., Heitmann, J., Avellan, A., Schroder, U., Kudelka, S., Kirsch, P.D., Krug, C., Hung, P.Y., Song, S.C., Ju, B.S., Price, J., Pant, G., Gnade, B.E., Krautschneider, W., Lee, B.-H., Jammy, R.

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Kinetics of the Reaction of Propargyl Radical with Nitric Oxide von DeSain, John D, Hung, P. Y, Thompson, Robert I, Glass, Graham P, Scuseria, Gustavo, Curl, R. F

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Vth variation and strain control of high Ge% thin SiGe channels by millisecond anneal realizing high performance pMOSFET beyond 16nm node von Lee, S.-H., Huang, J., Majhi, P., Kirsch, P.D., Min, B.-G., Park, C.-S., Oh, J., Loh, W.-Y., Kang, C.-Y., Sassman, B., Hung, P.Y., McCoy, S., Chen, J., Wu, B., Moori, G., Heh, D., Young, C., Bersuker, G., Tseng, H.-H., Banerjee, S.K., Jammy, R.

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