Gate-all-around technology: Taking advantage of ballistic transport? von Huguenin, J.L., Bidal, G., Denorme, S., Fleury, D., Loubet, N., Pouydebasque, A., Perreau, P., Leverd, F., Barnola, S., Beneyton, R., Orlando, B., Gouraud, P., Salvetat, T., Clement, L., Monfray, S., Ghibaudo, G., Boeuf, F., Skotnicki, T.

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Thin films of GeC deposited using a unique hollow cathode sputtering technique von Schrader, J.S., Huguenin-Love, J.L., Soukup, R.J., Ianno, N.J., Exstrom, C.L., Darveau, S.A., Udey, R.N., Dalal, V.L.

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Analysis of semiconductor thin films deposited using a hollow cathode plasma torch von Soukup, R.J., Ianno, N.J., Huguenin-Love, J.L.

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Thin-film devices for low power applications von Monfray, S., Fenouillet-Beranger, C., Bidal, G., Boeuf, F., Denorme, S., Huguenin, J.L., Samson, M.P., Loubet, N., Hartmann, J.M., Campidelli, Y., Destefanis, V., Arvet, C., Benotmane, K., Clement, L., Faynot, O., Skotnicki, T.

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A non-vacuum process for preparing nanocrystalline CuIn1-xGaxSe2 materials involving an open-air solvothermal reaction von OLEJNICEK, J, KAMLER, C. A, SOUKUP, R. J, MIRASANO, A, MARTINEZ-SKINNER, A. L, INGERSOLL, M. A, EXSTROM, C. L, DARVEAU, S. A, HUGUENIN-LOVE, J. L, DIAZ, M, IANNO, N. J

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High velocity Si-nanodot : A candidate for SRAM applications at 16nm node and below von Bidal, G., Boeuf, F., Denorme, S., Loubet, N., Huguenin, J.L., Perreau, P., Fleury, D., Leverd, F., Lagrasta, S., Barnola, S., Salvetat, T., Orlando, B., Beneyton, R., Clement, L., Pantel, R., Monfray, S., Ghibaudo, G., Skotnicki, T.

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Thin films formed by selenization of CuIn x B 1− x precursors in Se vapor von Kamler, C.A., Soukup, R.J., Ianno, N.J., Huguenin-Love, J.L., Olejníček, J., Darveau, S.A., Exstrom, C.L.

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Gate-All-Around technology: taking advantage of ballistic transport ? von Bidal, G., Huguenin, J.L., Denorme, S., Fleury, D., Loubet, N., Pouydebasque, A., Perreau, P., Leverd, F., Barnola, S., Beneyton, R., Orlando, B., Gouraud, P., Salvetat, T., Clement, L., Monfray, S., Ghibaudo, G., Boeuf, F., Skotnicki, T.

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Thin films formed by selenization of CuInxB1-x precursors in Se vapor von KAMLER, C. A, SOUKUP, R. J, IANNO, N. J, HUGUENIN-LOVE, J. L, OLEJNICEK, J, DARVEAU, S. A, EXSTROM, C. L

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A non-vacuum process for preparing nanocrystalline CuIn 1− x Ga x Se 2 materials involving an open-air solvothermal reaction von Olejníček, J., Kamler, C.A., Mirasano, A., Martinez-Skinner, A.L., Ingersoll, M.A., Exstrom, C.L., Darveau, S.A., Huguenin-Love, J.L., Diaz, M., Ianno, N.J., Soukup, R.J.

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Optical and crystallographic analysis of thin films of GeC deposited using a unique hollow cathode sputtering technique von Huguenin-Love, J.L., Soukup, R.J., Ianno, N.J., Schrader, J.S., Thompson, D.W., Dalal, V.L.

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The Properties of Ge-C Thin Films Deposited using Dual Hollow Cathodes von Huguenin-Love, J.L., Soukup, R.J., Ianno, N.J., Schrader, J.S., Dalal, V.L.

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First CMOS integration of ultra thin body and BOX (UTB2) structures on bulk direct silicon bonded (DSB) wafer with multi-surface orientations von Bidal, G., Boeuf, F., Denorme, S., Laviron, C., Bourdelle, K., Loubet, N., Campidelli, Y., Beneyton, R., Moriceau, H., Fournel, F., Morin, P., Barnola, S., Salvetat, T., Perreau, P., Gouraud, P., Leverd, F., Le-Gratiet, B., Huguenin, J.L., Fleury, D., Kusiaku, K., Cros, A., Leyris, C., Haendler, S., Borowiak, C., Clement, L., Pantel, R., Ghibaudo, G., Skotnicki, T.

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A close look at low-temperature magnetization data for TiBe2 von ACKER, F, HUGUENIN, R, PELIZZONE, M, SMITH, J. L

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A close look at low-temperature magnetization data for TiBe 2 von Acker, F., Huguenin, R., Pelizzone, M., Smith, J.L.

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