Treffer 1 - 4 von 4 für Suche 'Hughes, Hap L.', Suchdauer: 0,39s Treffer weiter einschränken
  1. 1
    Spatial Localization of Carrier Traps in 4H-SiC MOSFET Devices Using Thermally Stimulated Current

    Spatial Localization of Carrier Traps in 4H-SiC MOSFET Devices Using Thermally Stimulated Current von Tadjer, Marko J., Stahlbush, Robert E., Hobart, Karl D., McMarr, Patrick J., Hughes, Hap L., Imhoff, Eugene A., Kub, Fritz J., Haney, Sarah K., Agarwal, Anant

    Veröffentlicht in Journal of electronic materials

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  2. 2
    Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray Irradiation

    Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray Irradiation von Hughes, Hap L., Kub, Fritz J., Hobart, Karl D., Haney, Sarah K., Stahlbush, Robert E., Tadjer, Marko J., McMarr, Patrick J.

    Veröffentlicht in Materials science forum

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  3. 3
    Spatial Localization of Carrier Traps in 4H-SiC MOSFET Devices Using Thermally Stimulated Current: Group III Nitrides, Silicon Carbide, and Zinc Oxide

    Spatial Localization of Carrier Traps in 4H-SiC MOSFET Devices Using Thermally Stimulated Current: Group III Nitrides, Silicon Carbide, and Zinc Oxide von TADJER, Marko J, STAHLBUSH, Robert E, HOBART, Karl D, MCMARR, Patrick J, HUGHES, Hap L, IMHOFF, Eugene A, KUB, Fritz J, HANEY, Sarah K, AGARWAL, Anant

    Veröffentlicht in Journal of electronic materials

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  4. 4
    Thermally stimulated current separation of hole and acceptor trap density in 4H-SiC epitaxial MOS devices using gamma irradiation

    Thermally stimulated current separation of hole and acceptor trap density in 4H-SiC epitaxial MOS devices using gamma irradiation von Tadjer, M.J., Hobart, K.D., Stahlbush, R.E., McMarr, P.J., Hughes, H.L., Imhoff, E.A., Kub, F.J., Haney, S.K.


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