Radiation effects and hardening of MOS technology: devices and circuits von Hughes, H.L., Benedetto, J.M.

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The role of nanoclusters in reducing hole trapping in ion implanted oxides von Mrstik, B.J., Hughes, H.L., Gouker, P., Lawrence, R.K., McMarr, P.J.

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The structural aspects of non-crystalline SiO2 films on silicon: a review von REVESZ, A. G, HUGHES, H. L

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The Effect of Active Delay Element Resistance on Limiting Heavy Ion SEU Upset Cross-Sections of SOI ADE/SRAMs von Liu, S.T., Nelson, D.K., Tsang, J.C., Golke, K., Fechner, P., Heikkila, W., Brewster, N., Van Cleave, R., Liu, H.Y., McMarr, P.J., Hughes, H.L., Ziegler, J.F.

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Hole and electron trapping in ion implanted thermal oxides and SIMOX von Mrstik, B.J., Hughes, H.L., McMarr, P.J., Lawrence, R.K., Ma, D.I., Isaacson, I.P., Walker, R.A.

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Single event effects in PDSOI 4 M SRAM fabricated in UNIBOND von Liu, S.T., Heikkila, W.W., Golke, K.W., Anthony, D., Hurst, A., Kirchner, G., Jenkins, W.C., Hughes, H.L., Mitra, S., Ioannou, D.E.

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Nuclear reaction analysis of hydrogen in the buried SiO2 layer of Si/SiO2/Si structures von KRAUSER, J, REVESZ, A. G, HUGHES, H. L

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Comparison of charge trapping in undoped oxides made by low- and high-temperature deposition techniques von Mrstik, B.J., Hughes, H.L., Lawrence, R.K., McMarr, P.J., Gouker, P.

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Total ionizing dose-hardened carbon nanotube thin-film transistors with silicon oxynitride gate dielectrics von Cress, C.D., McMorrow, J.J., Robinson, J.T., Friedman, A.L., Hughes, H.L., Weaver, B.D., Landi, B.J.

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Total dose radiation hard 0.35 /spl mu/m SOI CMOS technology von Liu, S.T., Jenkins, W.C., Hughes, H.L.

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H/sup +/ motion in SiO/sub 2/: incompatible results from hydrogen-annealing and radiation models von Stahlbush, R.E., Lawrence, R.K., Hughes, H.L.

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Total dose hardening of SIMOX buried oxides for fully depleted devices in rad-tolerant applications von Brady, F.T., Hughes, H.L., McMarr, P.J., Mrstik, B.

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The structural aspects of non-crystalline SiO 2 films on silicon: a review von Revesz, A.G., Hughes, H.L.

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Hot-electron-induced degradation of front and back channels in partially and fully depleted SIMOX MOSFETs von Cristoloveanu, S., Gulwadi, S.M., Ioannou, D.E., Campisi, G.J., Hughes, H.L.

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Proton Induced Single Event Upset in 6 T SOI SRAMs von Liu, H.Y., Liu, M.S., Hughes, H.L.

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Effect of Total Ionizing Dose on a Bulk 130 nm Ring Oscillator Operating at Ultra-Low Power von Casey, M.C., Armstrong, S.E., Arora, R., King, M.P., Ahlbin, J.R., Francis, S.A., Bhuva, B.L., McMorrow, D., Hughes, H.L., McMarr, P.J., Melinger, J.S., Massengill, L.W.

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Reduction of radiation induced back channel threshold voltage shifts in partially depleted SIMOX CMOS devices by using ADVANTOX/sup TM/ substrates von Liu, S.T., Allen, L.P., Anc, M.J., Jenkins, W.C., Hughes, H.L., Twigg, M.E., Lawrence, R.K.

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Limiting Upset Cross Sections of SEU Hardened SOI SRAMs von Liu, M.S., Liu, H.Y., Brewster, N., Nelson, D., Golke, K.W., Kirchner, G., Hughes, H.L., Campbell, A., Ziegler, J.F.

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Annealing of total dose damage: redistribution of interface state density on [100], [110] and [111] orientation silicon von Stahlbush, R.E., Lawrence, R.K., Hughes, H.L., Saks, N.S.

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Effects of heat treatments in inert ambients on Si/SiO 2 structures von Revesz, A.G, Hughes, H.L

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