Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III–V semiconductor materials von Jallipalli, A., Balakrishnan, G., Huang, S.H., Khoshakhlagh, A., Dawson, L.R., Huffaker, D.L.

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Monolithically Integrated III-Sb-Based Laser Diodes Grown on Miscut Si Substrates von Tatebayashi, J., Jallipalli, A., Kutty, M.N., Shenghong Huang, Nunna, K., Balakrishnan, G., Dawson, L.R., Huffaker, D.L.

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Formation and Optical Characteristics of Type-II Strain-Relieved GaSb/GaAs Quantum Dots by Using an Interfacial Misfit Growth Mode von Tatebayashi, J., Baolai Liang, Bussian, D.A., Htoon, H., Shenghong Huang, Balakrishnan, G., Klimov, V., Dawson, L.R., Huffaker, D.L.

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Room-temperature optically-pumped GaSb quantum well based VCSEL monolithically grown on Si (100) substrate von BALAKRISHNAN, G, HUANG, S. H, KHOSHAKHLAGH, A, JALLIPALLI, A, ROTELLA, P, AMTOUT, A, KRISHNA, S, HAINES, C. P, DAWSON, L. R, HUFFAKER, D. L

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Application of advanced (S)TEM methods for the study of nanostructured porous functional surfaces: A few working examples von Santos, A.J., Lacroix, B., Maudet, F., Paumier, F., Hurand, S., Dupeyrat, C., Gómez, V.J., Huffaker, D.L., Girardeau, T., García, R., Morales, F.M.

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Material and device characterization of Type-II InAs/GaSb superlattice infrared detectors von Delmas, M., Debnath, M.C., Liang, B.L., Huffaker, D.L.

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Temperature dependence of stacking faults in catalyst-free GaAs nanopillars von Shapiro, Joshua N, Lin, Andrew, Ratsch, Christian, Huffaker, D L

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Low-threshold continuous-wave two-stack quantum-dot laser with reduced temperature sensitivity von Shchekin, O.B., Park, G., Huffaker, D.L., Mo, Q., Deppe, D.G.

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Low-threshold vertical-cavity surface-emitting lasers based on oxide-confinement and high contrast distributed Bragg reflectors von Deppe, D.G., Huffaker, D.L., Tchang-Hun Oh, Hongyu Deng, Qing Deng

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Self-organised quantum dots as dislocation filters : The case of GaAs-based lasers on silicon von MI, Z, YANG, J, BHATTACHARYA, P, HUFFAKER, D. L

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Growth of CdS nanowire crystals: Vapor–liquid–solid versus vapor–solid mechanisms von Grynko, D.A., Fedoryak, A.N., Dimitriev, O.P., Lin, A., Laghumavarapu, R.B., Huffaker, D.L.

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Low-threshold oxide-confined 1.3-μm quantum-dot laser von Gyoungwon Park, Shchekin, O.B., Huffaker, D.L., Deppe, D.G.

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Very-low-threshold index-confined planar microcavity lasers von Deppe, D.G., Huffaker, D.L., Shin, J., Deng, Q.

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Ultralow-threshold cryogenic vertical-cavity surface-emitting laser von Zou, Z., Huffaker, D.L., Deppe, D.G.

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GaAs and AlGaAs APDs with GaSb absorption regions in a separate absorption and multiplication structure using a hetero-lattice interface von Marshall, A.R.J., Craig, A.P., Reyner, C.J., Huffaker, D.L.

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Continuous-wave low-threshold performance of 1.3-/spl mu/m InGaAs-GaAs quantum-dot lasers von Huffaker, D.L., Park, G., Zou, Z., Shchekin, O.B., Deppe, D.G.

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Room-Temperature Optically Pumped (Al)GaSb Vertical-Cavity Surface-Emitting Laser Monolithically Grown on an Si(1 0 0) Substrate von Balakrishnan, G., Jallipalli, A., Rotella, P., Shenghong Huang, Khoshakhlagh, A., Amtout, A., Krishna, S., Dawson, L.R., Huffaker, D.L.

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Multiwavelength, densely-packed 2 x 2 vertical-cavity surface-emitting laser array fabricated using selective oxidation von Huffaker, D.L., Deppe, D.G.

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Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers von Park, G., Huffaker, D.L., Zou, Z., Shchekin, O.B., Deppe, D.G.

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Impact ionization coefficients and excess noise in Al0.55Ga0.45As0.56Sb0.44 lattice matched to InP von Jin, X, Lewis, H.I.J, Yi, X, Xie, S, Liang, B, Huffaker, D.L, Tan, C.H, David, J.P.R

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