Surface Plasmon-Enhanced Nanopillar Photodetectors von Senanayake, Pradeep, Hung, Chung-Hong, Shapiro, Joshua, Lin, Andrew, Liang, Baolai, Williams, Benjamin S, Huffaker, D. L

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Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform von Kwan, D. C. M., Kesaria, M., Jiménez, J. J., Srivastava, V., Delmas, M., Liang, B. L., Morales, F. M., Huffaker, D. L.

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Temperature dependence of stacking faults in catalyst-free GaAs nanopillars von Shapiro, Joshua N, Lin, Andrew, Ratsch, Christian, Huffaker, D L

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Self-organised quantum dots as dislocation filters : The case of GaAs-based lasers on silicon von MI, Z, YANG, J, BHATTACHARYA, P, HUFFAKER, D. L

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Strain relief by periodic misfit arrays for low defect density GaSb on GaAs von Huang, S. H., Balakrishnan, G., Khoshakhlagh, A., Jallipalli, A., Dawson, L. R., Huffaker, D. L.

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Growth of CdS nanowire crystals: Vapor–liquid–solid versus vapor–solid mechanisms von Grynko, D.A., Fedoryak, A.N., Dimitriev, O.P., Lin, A., Laghumavarapu, R.B., Huffaker, D.L.

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Strong passivation effects on the properties of an InAs surface quantum dot hybrid structure von Lin, A, Liang, B L, Dorogan, V G, Mazur, Yu I, Tarasov, G G, Salamo, G J, Huffaker, D L

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Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III–V semiconductor materials von Jallipalli, A., Balakrishnan, G., Huang, S.H., Khoshakhlagh, A., Dawson, L.R., Huffaker, D.L.

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Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices von Tatebayashi, J, Nuntawong, N, Wong, P S, Xin, Y-C, Lester, L F, Huffaker, D L

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Band Alignment Tailoring of InAs1-xSbx/GaAs Quantum Dots: Control of Type I to Type II Transition von HE, J, REYNER, C. J, MAZUR, Yu. I, SALAMO, G. J, LIANG, B. L, NUNNA, K, HUFFAKER, D. L, PAVARELLI, N, GRADKOWSKI, K, OCHALSKI, T. J, HUYET, G, DOROGAN, V. G

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Native-oxide defined ring contact for low threshold vertical-cavity lasers von Huffaker, D. L., Deppe, D. G., Kumar, K., Rogers, T. J.

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Flexibility of Ga-containing Type-II superlattice for long-wavelength infrared detection von Delmas, M, Kwan, D C M, Debnath, M C, Liang, B L, Huffaker, D L

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Optical and structural investigation of a 10 μm InAs/GaSb type-II superlattice on GaAs von Kwan, D. C. M., Kesaria, M., Anyebe, E. A., Alshahrani, D. O., Delmas, M., Liang, B. L., Huffaker, D. L.

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Growth mechanisms of highly mismatched AlSb on a Si substrate von Balakrishnan, G., Huang, S., Dawson, L. R., Xin, Y.-C., Conlin, P., Huffaker, D. L.

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Quantum dimensionality, entropy, and the modulation response of quantum dot lasers von Deppe, D. G., Huffaker, D. L.

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InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers von Xin, Y.-C., Vaughn, L. G., Dawson, L. R., Stintz, A., Lin, Y., Lester, L. F., Huffaker, D. L.

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Optimization of surface passivation for suppressing leakage current in GaSb PIN devices von Ji, Y, Azizur-Rahman, K. M, Chang, T, Juang, B.-C, Prout, D. L, Liang, B, Huffaker, D. L, Chatziioannou, A. F

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Formation trends in quantum dot growth using metalorganic chemical vapor deposition von El-Emawy, A. A., Birudavolu, S., Wong, P. S., Jiang, Y.-B., Xu, H., Huang, S., Huffaker, D. L.

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Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate von Huang, S. H., Balakrishnan, G., Khoshakhlagh, A., Dawson, L. R., Huffaker, D. L.

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800 meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots von Nowozin, T., Bonato, L., Högner, A., Wiengarten, A., Bimberg, D., Lin, Wei-Hsun, Lin, Shih-Yen, Reyner, C. J., Liang, Baolai L., Huffaker, D. L.

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