Experimental observations of the thermal stability of high-k gate dielectric materials on silicon von Lysaght, P.S., Chen, P.J., Bergmann, R., Messina, T., Murto, R.W., Huff, H.R.

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Measurement of silicon particles by laser surface scanning and angle-resolved light scattering von HUFF, H. R, GOODALL, R. K, STOVER, J, WILLIAMS, E, WOO, K.-S, LIU, B. Y. H, WARNER, T, HIRLEMAN, D, GILDERSLEEVE, K, BULLIS, W. M, SCHEER, B. W

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Interfacial Layer-Induced Mobility Degradation in High- k Transistors von Bersuker, G., Barnett, J., Moumen, N., Foran, B., Young, C. D., Lysaght, P., Peterson, J., Lee, B. H., Zeitzoff, P. M., Huff, H. R.

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High-k gate stacks for planar, scaled CMOS integrated circuits von Huff, H.R., Hou, A., Lim, C., Kim, Y., Barnett, J., Bersuker, G., Brown, G.A., Young, C.D., Zeitzoff, P.M., Gutt, J., Lysaght, P., Gardner, M.I., Murto, R.W.

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Plasma nitridation of very thin gate dielectrics von Al-Shareef, H.N, Bersuker, G, Lim, C, Murto, R, Borthakur, S, Brown, G.A, Huff, H.R

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Device performance of in situ steam generated gate dielectric nitrided by remote plasma nitridation von Al-Shareef, H. N., Karamcheti, A., Luo, T. Y., Bersuker, G., Brown, G. A., Murto, R. W., Jackson, M. D., Huff, H. R., Kraus, P., Lopes, D., Olsen, C., Miner, G.

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Characterization of ultrathin gate dielectrics formed by in-situ steam generation with nitrogen postprocessing von KARAMCHETI, A, WATT, V. H. C, AL-SHAREEF, H. N, LUO, T. Y, JACKSON, M. D, HUFF, H. R, STEINBRÜCHEL, C

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Oxygen precipitation behavior in 300 mm polished Czochralski silicon wafers von ONO, T, ROZGONYI, G. A, AU, C, MESSINA, T, GOODALL, R. K, HUFF, H. R

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Degradation of thin oxides during electrical stress von Bersuker, Gennadi, Jeon, Yongjoo, Huff, Howard R

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Physical comparison of HfO2 transistors with polycrystalline silicon and TiN electrodes von Lysaght, P. S., Foran, B., Bersuker, G., Peterson, J. J., Young, C. D., Majhi, P., Lee, B-H., Huff, H. R.

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Correlation of 150 mm P/P+ epitaxial silicon wafer flatness parameters for deep submicron applications von HUFF, H. R, POPHAM, G. H, POTTER, R. W

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Interpretation of carrier recombination lifetime and diffusion length measurements in silicon von BULLIS, W. M, HUFF, H. R

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Dielectrics for future transistors von Bersuker, G, Zeitzoff, P, Brown, G, Huff, H.R

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The role of localized states in the degradation of thin gate oxides von Bersuker, Gennadi, Korkin, Anatoli, Fonseca, Leonardo, Safonov, Andrey, Bagatur’yants, Alexander, Huff, Howard R.

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Atomistic model of electric stress induced defect generation in silicon oxide von Korkin, Anatoli A., Bersuker, Gennadi I., Huff, Howard R.

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Some observations on oxygen precipitation/gettering in device processed Czochralski silicon von HUFF, H. R, SCHAAKE, H. F, ROBINSON, J. T, BABER, S. C, WONG, D

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Scaling CMOS Materials & devices von Brown, G

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Minority‐Carrier Lifetime: Correlation with IC Process Parameters von Huff, H. R., Chiu, T. L.

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Characterization of 300 mm silicon-polished and EPI wafers von Shih, Steven, Au, Chi, Yang, Zach, Messina, Troy, Goodall, Randal K., Huff, Howard R.

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Chemical Processing and Materials Compatibility of High-K Dielectric Materials for Advanced Gate Stacks von Guan, J.J., Huff, Howard R., Bersuker, G., Gale, Glenn W., Jackson, M.

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