MOS transistors with stacked SiO2-Ta2O5-SiO2 gate dielectrics for giga-scale integration of CMOS technologies von Kizilyalli, I.C., Huang, R.Y.S., Roy, R.K.

Volltext

MOS transistors with stacked SiO/sub 2/-Ta/sub 2/O/sub 5/-SiO/sub 2/ gate dielectrics for giga-scale integration of CMOS technologies von Kizilyalli, I.C., Huang, R.Y.S., Roy, R.K.

Volltext

Overcoming Cu/CVD low-k integration challenges in a high performance interconnect technology von Lytle, S.A., Karthikeyan, S., Oladeji, I.O., Lee, T.J., Li, H.M., Zhang, A., Steiner, K.G., Merchant, S.M., Oh, M., Jessen, S.W., Gibson, G.W., Ramappa, D., Taylor, J.A., Tse, T.Y., Hariharaputhiran, M., Hua, G., Kim, H.T., Mattern, L.N., Kamat, N., Chew, P.K.H., Chesire, D.P., Kang, S.H., Vitkavage, S.C., Adebanjo, R.O., Wolf, T.M., Kook, T., Huang, R.Y.S., Cuthbertson, A., Hillenius, S.J., Ibbotson, D.E.

Volltext bestellen

Species, dose and energy dependence of implant induced transient enhanced diffusion von Griffin, P.B., Lever, R.F., Huang, R.Y.S., Kennel, H.W., Packan, P.A., Plummer, J.D.

Volltext