Robust mode space approach for atomistic modeling of realistically large nanowire transistors von Huang, Jun Z., Ilatikhameneh, Hesameddin, Povolotskyi, Michael, Klimeck, Gerhard

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Small-Signal and Large-Signal RF Characterization and Modeling of Low and High Voltage FinFETs for 14/16 nm Technology Node SoCs von Kar, Anirban, Parihar, Shivendra Singh, Huang, Jun Z., Zhang, Huilong, Wang, Weike, Imura, Kimihiko, Chauhan, Yogesh Singh

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Characterization and Modeling of 14-/16-nm FinFET-Based LDMOS von Kar, Anirban, Parihar, Shivendra Singh, Huang, Jun Z., Zhang, Huilong, Wang, Weike, Imura, Kimihiko, Chauhan, Yogesh Singh

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Rigorous Modeling and Investigation of Low-Field Hole Mobility in Silicon and Germanium Gate-All-Around Nanosheet Transistors von Zhang, Shuo, Xie, Hao, Huang, Jun Z., Chen, Wenchao, Liao, Jie, Yin, Wen-Yan

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Impact of Body Thickness and Scattering on III-V Triple Heterojunction TFET Modeled With Atomistic Mode-Space Approximation von Chen, Chin-Yi, Ilatikhameneh, Hesameddin, Huang, Jun Z., Klimeck, Gerhard, Povolotskyi, Michael

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DEEP INSIGHT INTO CHANNEL ENGINEERING OF SUB-3 NM-NODE P-TYPE NANOSHEET TRANSISTORS WITH A QUANTUM TRANSPORT MODEL von Khaliq, Afshan, Zhang, Shuo, Huang, Jun Z., Kang, Kai, Yin, Wen-Yan

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Design Considerations for Si- and Ge-Stacked Nanosheet pMOSFETs Based on Quantum Transport Simulations von Zhang, Shuo, Huang, Jun Z., Xie, Hao, Khaliq, Afshan, Wang, Dawei, Chen, Wenchao, Miao, Kai, Chen, Hongsheng, Yin, Wen-Yan

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Quantum Transport Study of Si Ultrathin-Body Double-Gate pMOSFETs: - , - , Energy Delay, and Parasitic Effects von Zhang, Shuo, Huang, Jun Z., Khaliq, Afshan, Xie, Hao, Chen, Wenchao, Yin, Wen-Yan

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Scalable GaSb/InAs Tunnel FETs With Nonuniform Body Thickness von Huang, Jun Z., Pengyu Long, Povolotskyi, Michael, Klimeck, Gerhard, Rodwell, Mark J. W.

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Piezoelectric Tunnel FET With a Steep Slope von Long, Yuxiong, Huang, Jun Z., Huang, Qianqian, Xu, Nuo, Jiang, Xiangwei, Niu, Zhi-Chuan, Huang, Ru, Li, Shu-Shen

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Exploring the Designs of p-Type Piezoelectric FinFETs Based on NEGF Transport Simulations Comprising Phonon Scattering von Long, Yuxiong, Huang, Jun Z., Huang, Qianqian, Xu, Nuo, Jiang, Xiangwei, Niu, Zhi-Chuan, Esseni, David, Huang, Ru, Li, Shu-Shen

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High-Current Tunneling FETs With ( 1\bar 0 ) Orientation and a Channel Heterojunction von Pengyu Long, Huang, Jun Z., Povolotskyi, Michael, Klimeck, Gerhard, Rodwell, Mark J. W.

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Design and Simulation of GaSb/InAs 2D Transmission-Enhanced Tunneling FETs von Pengyu Long, Wilson, Evan, Huang, Jun Z., Klimeck, Gerhard, Rodwell, Mark J. W., Povolotskyi, Michael

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A Multiscale Modeling of Triple-Heterojunction Tunneling FETs von Huang, Jun Z., Long, Pengyu, Povolotskyi, Michael, Ilatikhameneh, Hesameddin, Ameen, Tarek A., Rahman, Rajib, Rodwell, Mark J. W., Klimeck, Gerhard

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Performance degradation of superlattice MOSFETs due to scattering in the contacts von Long, Pengyu, Huang, Jun Z., Jiang, Zhengping, Klimeck, Gerhard, Rodwell, Mark J. W., Povolotskyi, Michael

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Model Order Reduction for Multiband Quantum Transport Simulations and its Application to p-Type Junctionless Transistors von Huang, J. Z., Chew, W. C., Jie Peng, Chi-Yung Yam, Li Jun Jiang, Guan-Hua Chen

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Efficient Simulation and Analysis of Quantum Ballistic Transport in Nanodevices With AWE von Huang, J. Z., Weng Cho Chew, Min Tang, Lijun Jiang

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Model Order Reduction for Quantum Transport Simulation of Band-To-Band Tunneling Devices von Huang, Jun Z., Lining Zhang, Weng Cho Chew, Chi-Yung Yam, Li Jun Jiang, Guan-Hua Chen, Mansun Chan

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P-Type Tunnel FETs With Triple Heterojunctions von Huang, Jun Z., Long, Pengyu, Povolotskyi, Michael, Klimeck, Gerhard, Rodwell, Mark J. W.

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Combination of Equilibrium and Nonequilibrium Carrier Statistics Into an Atomistic Quantum Transport Model for Tunneling Heterojunctions von Ameen, Tarek A., Ilatikhameneh, Hesameddin, Huang, Jun Z., Povolotskyi, Michael, Rahman, Rajib, Klimeck, Gerhard

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