Growth of strained GaAs 1− y Sb y and GaAs 1− y − z Sb y N z quantum wells on InP substrates von Huang, J.Y.T., Xu, D.P., Song, X., Babcock, S.E., Kuech, T.F., Mawst, L.J.

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Nanostructure of GaAs 0.88Sb 0.10N 0.02/InP quantum wells grown by metalorganic chemical vapor deposition on InP von Song, X., Babcock, S.E., Paulson, C.A., Kuech, T.F., Huang, J.Y.T., Xu, D.P., Park, J., Mawst, L.J.

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MOVPE growth of antimonide-containing alloy materials for long wavelength applications von Kuech, T.F., Khandekar, A.A., Rathi, M., Mawst, L.J., Huang, J.Y.T., Song, Xueyan, Babcock, S.E., Meyer, J.R., Vurgaftman, I.

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Growth of strained GaAs1-ySby and GaAs1-y-zSbyNz quantum wells on InP substrates von HUANG, J. Y. T, XU, D. P, SONG, X, BABCOCK, S. E, KUECH, T. F, MAWST, L. J

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MOVPE growth of Ga(As)SbN on GaSb substrates von Huang, J.Y.T., Mawst, L.J., Jha, S., Kuech, T.F., Wang, D., Shterengas, L., Belenky, G., Meyer, J.R., Vurgaftman, I.

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Nanostructure of GaAs0.88Sb0.10N0.02/InP quantum wells grown by metalorganic chemical vapor deposition on InP von SONG, X, BABCOCK, S. E, PAULSON, C. A, KUECH, T. F, HUANG, J. Y. T, XU, D. P, PARK, J, MAWST, L. J

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GaAsSbN/GaAsSb/InP type-II Quantum Wells for Mid-IR Emission von Huang, J.Y.T., Xu, D., Park, J.H., Mawst, L.J., Kuech, T.F., Vurgaftman, I., Meyer, J.R.

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Exciton binding energy and electron effective-mass in strain compensated InGaAsN/GaAs single Quantum Well von Xu, L., Patel, D., Menoni, C.S., Yeh, J.-Y., Huang, J.Y.T., Mawst, L.J., Tansu, N.

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Stable isotopic and biomarker evidence of terrigenous organic matter export to the deep sea during tropical storms von Selvaraj, K., Lee, T.Y., Yang, J.Y.T., Canuel, E.A., Huang, J.C., Dai, M., Liu, J.T., Kao, S.J.

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