Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer von Ting-En Hsieh, Chang, Edward Yi, Yi-Zuo Song, Yueh-Chin Lin, Huan-Chung Wang, Shin-Chien Liu, Salahuddin, Sayeef, Hu, Chenming Calvin

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High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications von Chia-Hsun Wu, Ping-Cheng Han, Shih-Chien Liu, Ting-En Hsieh, Lumbantoruan, Franky Juanda, Yu-Hsuan Ho, Jian-You Chen, Kun-Sheng Yang, Huan-Chung Wang, Yen-Ku Lin, Po-Chun Chang, Quang Ho Luc, Yueh-Chin Lin, Chang, Edward Yi

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GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications von Shih-Chien Liu, Bo-Yuan Chen, Yueh-Chin Lin, Ting-En Hsieh, Huan-Chung Wang, Chang, Edward Yi

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Normally-OFF GaN MIS-HEMT With F− Doped Gate Insulator Using Standard Ion Implantation von Wu, Chia-Hsun, Han, Ping-Cheng, Luc, Quang Ho, Hsu, Ching-Yi, Hsieh, Ting-En, Wang, Huan-Chung, Lin, Yen-Ku, Chang, Po-Chun, Lin, Yueh-Chin, Chang, Edward Yi

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AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants von Wang, Huan-Chung, Hsieh, Ting-En, Lin, Yueh-Chin, Luc, Quang Ho, Liu, Shih-Chien, Wu, Chia-Hsun, Dee, Chang Fu, Majlis, Burhanuddin Yeop, Chang, Edward Yi

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Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect von Szu-Ping Tsai, Heng-Tung Hsu, Che-Yang Chiang, Yung-Yi Tu, Chia-Hua Chang, Ting-En Hsieh, Huan-Chung Wang, Shih-Chien Liu, Chang, Edward Yi

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Improved Linearity in AlGaN/GaN HEMTs for Millimeter-Wave Applications by Using Dual-Gate Fabrication von Wang, Huan-Chung, Su, Huan-Fu, Luc, Quang-Ho, Lee, Ching-Ting, Hsu, Heng-Tung, Chang, Edward Yi

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Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO2 on n-InAs/InGaAs Metal--Oxide--Semiconductor Capacitors von Trinh, Hai-Dang, Lin, Yueh-Chin, Wang, Huan-Chung, Chang, Chia-Hua, Kakushima, Kuniyuki, Iwai, Hiroshi, Kawanago, Takamasa, Lin, Yan-Gu, Chen, Chi-Ming, Wong, Yuen-Yee, Huang, Guan-Ning, Hudait, Mantu, Chang, Edward Yi

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High-Performance LPCVD-SiNx/InAlGaN/GaN MIS-HEMTs With 850-V 0.98- \text \cdot cm2 for Power Device Applications von Wang, Huan-Chung, Lumbantoruan, Franky Juanda, Hsieh, Ting-En, Wu, Chia-Hsun, Lin, Yueh-Chin, Chang, Edward Yi

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A simple extraction method for parasitic series resistances in GaN HEMTs considering non-quasi-static effects von Nagarajan, Venkatesan, Chen, Kun-Ming, Wang, Huan-Chung, Singh, Sankalp Kumar, Anandan, Deepak, Lin, Yueh-Chin, Chang, Edward Yi

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Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO$_{2}$ on n-InAs/InGaAs Metal–Oxide–Semiconductor Capacitors von Trinh, Hai-Dang, Lin, Yueh-Chin, Wang, Huan-Chung, Chang, Chia-Hua, Kakushima, Kuniyuki, Iwai, Hiroshi, Kawanago, Takamasa, Lin, Yan-Gu, Chen, Chi-Ming, Wong, Yuen-Yee, Huang, Guan-Ning, Hudait, Mantu, Chang, Edward Yi

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Fabrication of AlGaN/GaN HEMTs with slant field plates by using deep-UV lithography von Ting-En Hsieh, Lu-Che Huang, Yueh-Chin Lin, Chia-Hua Chang, Huan-Chung Wang, Chang, E. Y.

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Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ·cm 2 Specific On-Resistance for Power Device Applications von Wu, Chia-Hsun, Chen, Jian-You, Han, Ping-Cheng, Lee, Ming-Wen, Yang, Kun-Sheng, Wang, Huan-Chung, Chang, Po-Chun, Luc, Quang Ho, Lin, Yueh-Chin, Dee, Chang-Fu, Hamzah, Azrul Azlan, Chang, Edward Yi

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Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ·cm2 Specific On-Resistance for Power Device Applications von Wu, Chia-Hsun, Chen, Jian-You, Han, Ping-Cheng, Lee, Ming-Wen, Yang, Kun-Sheng, Wang, Huan-Chung, Chang, Po-Chun, Luc, Quang Ho, Lin, Yueh-Chin, Dee, Chang-Fu, Hamzah, Azrul Azlan, Chang, Edward Yi

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Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 Ω·cm2 Specific On-Resistance for Power Device Applications von Wu, Chia-Hsun, Jian-You, Chen, Ping-Cheng, Han, Ming-Wen, Lee, Kun-Sheng, Yang, Huan-Chung, Wang, Po-Chun, Chang, Quang Ho Luc, Yueh-Chin, Lin, Chang-Fu, Dee, Hamzah, Azrul Azlan, Edward Yi Chang

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High-Performance LPCVD-SiN x /InAlGaN/GaN MIS-HEMTs With 850-V 0.98-$\text{m}{\Omega} \cdot$ cm 2 for Power Device Applications von Wang, Huan-Chung, Lumbantoruan, Franky Juanda, Hsieh, Ting-En, Wu, Chia-Hsun, Lin, Yueh-Chin, Chang, Edward Yi

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Low Leakage Current GaN MIS-HEMT with SiN x Gate Insulator using N 2 Plasma Treatment von Liu, Shih-Chien, Wang, Huan-Chung, Chang, Edward Yi

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AlGaN/GaN MIS-HEMTs With High Quality ALD-Al 2 O 3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants von Wang, Huan-Chung, Hsieh, Ting-En, Lin, Yueh-Chin, Luc, Quang Ho, Liu, Shih-Chien, Wu, Chia-Hsun, Dee, Chang Fu, Majlis, Burhanuddin Yeop, Chang, Edward Yi

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High-Performance LPCVD-SiNx/InAlGaN/GaN MIS-HEMTs With 850-V 0.98-[Formula Omitted]cm2 for Power Device Applications von Huan-Chung, Wang, Lumbantoruan, Franky Juanda, Hsieh, Ting-En, Wu, Chia-Hsun, Yueh-Chin, Lin, Edward Yi Chang

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Low Leakage Current GaN MIS-HEMT with SiN x Gate Insulator using N 2 Plasma Treatment von Liu, Shih-Chien, Wang, Huan-Chung, Chang, Edward Yi

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