Measurement of Channel Temperature in GaN High-Electron Mobility Transistors von Jungwoo Joh, del Alamo, J.A., Chowdhury, U., Tso-Min Chou, Hua-Quen Tserng, Jimenez, J.L.

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A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology von Campbell, C., Lee, C., Williams, V., Ming-Yih Kao, Hua-Quen Tserng, Saunier, P., Balisteri, T.

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InAlN Barrier Scaled Devices for Very High f and for Low-Voltage RF Applications von Saunier, Paul, Schuette, Michael L., Tso-Min Chou, Hua-Quen Tserng, Ketterson, Andrew, Beam, Edward, Pilla, Manyam, Xiang Gao

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Development of Ka-Band GaAs pHEMTs with Output Power over 1 W/mm von Dumka, Deep C, Ming-Yih Kao, Beam, Edward, Tso-Min Chou, Hua-Quen Tserng, Fanning, David M

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AlGaN/GaN HEMTs with PAE of 53% at 35 GHz for HPA and Multi-Function MMIC Applications von Ming-Yih Kao, Lee, C., Hajji, R., Saunier, P., Hua-Quen Tserng

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A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology von Campbell, C., Cathy Lee, Williams, V., Ming-Yih Kao, Hua-Quen Tserng, Saunier, P.

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K/Ka-band low-noise embedded transmission line (ETL) MMIC amplifiers von Hua-Quen Tserng, Witkowski, L.C., Ketterson, A.A., Saunier, P., Jones, T.

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Embedded transmission-Line (ETL) MMIC for low-cost high-density wireless communication applications von Hua-Quen Tserng, Saunier, P., Ketterson, A., Witkowski, L.C., Jones, T.

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InAIN Barrier Scaled Devices for Very High fT and for Low-Voltage RF Applications : GaN ELECTRONIC DEVICES von SAUNIER, Paul, SCHUETTE, Michael L, CHOU, Tso-Min, TSERNG, Hua-Quen, KETTERSON, Andrew, BEAM, Edward, PILLA, Manyam, XIANG GAO

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Gate-recessed integrated E/D GaN HEMT technology with f T /f max >300 GHz von Schuette, Michael L., Ketterson, Andrew, Song, Bo, Beam, Edward, Chou, Tso-Min, Pilla, Manyam, Tserng, Hua-Quen, Gao, Xiang, Guo, Shiping, Fay, Patrick J., Xing, Huili Grace, Saunier, Paul

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Gate-Recessed Integrated E/D GaN HEMT Technology With syntax error at token von Schuette, Michael L, Ketterson, Andrew, Song, Bo, Beam, Edward, Chou, Tso-Min, Pilla, Manyam, Tserng, Hua-Quen, Gao, Xiang, Guo, Shiping, Fay, Patrick J, Xing, Huili Grace, Saunier, Paul

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Gate-Recessed Integrated E/D GaN HEMT Technology With [Formula Omitted] von Schuette, Michael L, Ketterson, Andrew, Song, Bo, Beam, Edward, Chou, Tso-Min, Pilla, Manyam, Tserng, Hua-Quen, Gao, Xiang, Guo, Shiping, Fay, Patrick J, Xing, Huili Grace, Saunier, Paul

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Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz von Schuette, Michael L., Ketterson, Andrew, Song, Bo, Beam, Edward, Chou, Tso-Min, Pilla, Manyam, Tserng, Hua-Quen, Gao, Xiang, Guo, Shiping, Fay, Patrick J., Xing, Huili Grace, Saunier, Paul

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X-band power AlGaAs/InGaAs P-n-p HBT's von HILL, D. G, TAE SEUNG KIM, HUA QUEN TSERNG

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AlGaAs/InGaAs heterostructures with doped channels for discrete devices and monolithic amplifiers von Saunier, P., Tserng, H.Q.

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Millimeter-wave power operation of an AlGaAs/InGaAs/GaAs quantum well MISFET von Kim, B., Matyi, R.J., Wurtele, M., Bradshaw, K., Khatibzadeh, M.A., Tserng, H.Q.

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Embedded transmission line MMIC 1-W flip chip assembly using a Z-axis interconnect von Budka, T., Ketterson, A., Hua-Quen Tserng, Stiborek, L., Heinrich, L., Smith, R., Ables, B., Kyhl, C., Worthen, K., Brehm, G., Reddick, J.

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K/Ka-band low-noise embedded transmission line (ETL) MMIC amplifiers von Hua-Quen Tserng, Witkowski, L., Ketterson, A., Saunier, P., Jones, T.

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Method for Estimation of the Channel Temperature of GaN High Electron Mobility Transistors von Jungwoo Joh, Chowdhury, U., Tso-Min Chou, Hua-Quen Tserng, Jimenez, J.L.

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GaAs/AlGaAs heterojunction MISFET's having 1-W/mm power density at 18.5 GHz von Bumman Kim, Hua Quen Tserng, Lee, J.W.

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