Effect of porous silicon substrate on structural, mechanical and optical properties of MOCVD and ALD ruthenium oxide nanolayers von Brytavskyi, Ievgen, Hušeková, Kristína, Myndrul, Valerii, Pavlenko, Mykola, Coy, Emerson, Zaleski, Karol, Gregušová, Dagmar, Yate, Luis, Smyntyna, Valentyn, Iatsunskyi, Igor

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Characterization of MIS photoanode with a thin SiO2 layer for photoelectrochemical water splitting von Chymo, Filip, Fröhlich, Karol, Kundrata, Ivan, Hušeková, Kristína, Harmatha, Ladislav, Racko, Juraj, Breza, Juraj, Mikolášek, Miroslav

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Structure and Thermal Stability of ε/κ-Ga 2 O 3 Films Deposited by Liquid-Injection MOCVD von Dobročka, Edmund, Gucmann, Filip, Hušeková, Kristína, Nádaždy, Peter, Hrubišák, Fedor, Egyenes, Fridrich, Rosová, Alica, Mikolášek, Miroslav, Ťapajna, Milan

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Structure and Thermal Stability of ε/κ-Ga[sub.2]O[sub.3] Films Deposited by Liquid-Injection MOCVD von Dobročka, Edmund, Gucmann, Filip, Hušeková, Kristína, Nádaždy, Peter, Hrubišák, Fedor, Egyenes, Fridrich, Rosová, Alica, Mikolášek, Miroslav, Ťapajna, Milan

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Phase‐Dependent Phonon Heat Transport in Nanoscale Gallium Oxide Thin Films von Xiao, Xinglin, Mao, Yali, Meng, Biwei, Ma, Guoliang, Hušeková, Kristína, Egyenes, Fridrich, Rosová, Alica, Dobročka, Edmund, Eliáš, Peter, Ťapajna, Milan, Gucmann, Filip, Yuan, Chao

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Development and characterisation of photoelectrochemical MIS structures with RuO 2 /TiO 2 gate stacs for water oxidation von Mikolášek, Miroslav, Fröhlich, Karol, Hušeková, Kristína, Ondrejka, Peter, Chymo, Filip, Kemény, Martin, Hotovy, Ivan, Harmatha, Ladislav

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Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices von Hrubišák, Fedor, Hušeková, Kristína, Zheng, Xiang, Rosová, Alica, Dobročka, Edmund, Ťapajna, Milan, Mičušík, Matej, Nádaždy, Peter, Egyenes, Fridrich, Keshtkar, Javad, Kováčová, Eva, Pomeroy, James W., Kuball, Martin, Gucmann, Filip

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Structure and Thermal Stability of ε/κ-Ga2O3 Films Deposited by Liquid-Injection MOCVD von Dobročka, Edmund, Gucmann, Filip, Hušeková, Kristína, Nádaždy, Peter, Hrubišák, Fedor, Egyenes, Fridrich, Rosová, Alica, Mikolášek, Miroslav, Ťapajna, Milan

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Atomic layer deposition of high-quality Al2O3 and Al-doped TiO2 thin films from hydrogen-free precursors von Aarik, Lauri, Arroval, Tõnis, Rammula, Raul, Mändar, Hugo, Sammelselg, Väino, Hudec, Boris, Hušeková, Kristína, Fröhlich, Karol, Aarik, Jaan

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Thermal stability of rhombohedral α- and monoclinic β-Ga2O3 grown on sapphire by liquid-injection MOCVD von Gucmann, Filip, Nádaždy, Peter, Hušeková, Kristína, Dobročka, Edmund, Priesol, Juraj, Egyenes, Fridrich, Šatka, Alexander, Rosová, Alica, Ťapajna, Milan

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Impact of plasma treatment on electrical properties of TiO2/RuO2 based DRAM capacitor von Hudec, Boris, Hušeková, Kristína, Rosová, Alica, Šoltýs, Ján, Rammula, Raul, Kasikov, Aarne, Uustare, Teet, Mi ušík, Matej, Omastová, Mária, Aarik, Jaan, Fröhlich, Karol

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Nanoscale Characterization of TiO 2 Films Grown by Atomic Layer Deposition on RuO 2 Electrodes von Murakami, Katsuhisa, Rommel, Mathias, Hudec, Boris, Rosová, Alica, Hušeková, Kristína, Dobročka, Edmund, Rammula, Raul, Kasikov, Aarne, Han, Jeong Hwan, Lee, Woongkyu, Song, Seul Ji, Paskaleva, Albena, Bauer, Anton J., Frey, Lothar, Fröhlich, Karol, Aarik, Jaan, Hwang, Cheol Seong

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ZrO 2 /InAlN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions von Gregušová, Dagmar, Hušeková, Kristína, Stoklas, Roman, Blaho, Michal, Jurkovič, Michal, Carlin, Jean-Francois, Grandjean, Nicolas, Kordoš, Peter

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Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes von HUDEC, Boris, HUSEKOVA, Kristína, CHEOL SEONG HWANG, FRÖHLICH, Karol, TARRE, Aivar, HWAN HAN, Jeong, HAN, Sora, ROSOVA, Alica, LEE, Woongkyu, KASIKOV, Aarne, SEUL JI SONG, AARIK, Jaan

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Electrical properties of TiO 2-based MIM capacitors deposited by TiCl 4 and TTIP based atomic layer deposition processes von Hudec, Boris, Hušeková, Kristína, Tarre, Aivar, Han, Jeong Hwan, Han, Sora, Rosová, Alica, Lee, Woongkyu, Kasikov, Aarne, Song, Seul Ji, Aarik, Jaan, Hwang, Cheol Seong, Fröhlich, Karol

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TiO2-Based Metal-Insulator-Metal Structures for Future DRAM Storage Capacitors von Fröhlich, Karol, Hudec, Boris, Ťapajna, Milan, Hušeková, Kristina, Rosová, Alica, Eliáš, Peter, Aarik, Jaan, Rammula, Raul, Kasikov, Aarne, Arroval, Tonis, Aarik, Lauri, Murakami, Katsuhisa, Rommel, Mathias, Bauer, Anton J.

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Low Equivalent Oxide Thickness TiO 2 Based Capacitors for DRAM Application von Fröhlich, Karol, Hudec, Boris, Hušeková, Kristina, Aarik, Jaan, Tarre, A., Kasikov, Aarne, Rammula, Raul, Vincze, Andrej

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TiO 2 -Based Metal-Insulator-Metal Structures for Future DRAM Storage Capacitors von Fröhlich, Karol, Hudec, Boris, Ťapajna, Milan, Hušeková, Kristina, Rosová, Alica, Eliáš, Peter, Aarik, Jaan, Rammula, Raul, Kasikov, Aarne, Arroval, Tonis, Aarik, Lauri, Murakami, Katsuhisa, Rommel, Mathias, Bauer, Anton J.

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ZrO sub(2)/InAlN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions von Gregusova, Dagmar, Husekova, Kristina, Stoklas, Roman, Blaho, Michal, Jurkovic, Michal, Carlin, Jean-Francois, Grandjean, Nicolas, Kordos, Peter

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Preparation of High Permittivity GdScO 3 Films by Liquid Injection MOCVD von Huseková, Kristina, Jurkovič, Michal, Cico, Karol, Machajdik, Daniel, Dobročka, Edmund, Lupták, Roman, Mackova, Anna, Fröhlich, Karol

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