Short wave infrared LEDs based on strained GeSn von Zhang, Li‐Feng, Shu, Bin, Jiang, Ruo‐Hong, Gao, Yv‐Long, Zhang, He‐Ming, Xuan, Rong‐Xi, Hu, Hui‐Yong

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Influence of γ-ray total dose radiation effect on the hot carrier gate current of the uniaxial strained Si nano-scale NMOSFET von Hao, Min-Ru, Hu, Hui-Yong, Liao, Chen-Guang, Wang, Bin, Kang, Hai-Yan, Zhang, He-Ming

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Simulation study of device physics and design of GeOI TFET with PNN structure and buried layer for high performance von Wang, Bin, Hu, Sheng, Feng, Yue, Li, Peng, Hu, Hui-Yong, Shu, Bin

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Strain and Dimension Effects on the Threshold Voltage of Nanoscale Fully Depleted Strained-SOI TFETs von Hu, Hui-Yong, Liu, Shu-lin, Zhang, He-Ming, Li, Yu-Chen

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A Positioning System based on Communication Satellites and the Chinese Area Positioning System (CAPS) von Ai, Guo-Xiang, Shi, Hu-Li, Wu, Hai-Tao, Yan, Yi-Hua, Bian, Yu-Jing, Hu, Yong-Hui, Li, Zhi-Gang, Guo, Ji, Cai, Xian-De

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Two-dimensional threshold voltage model of a nanoscale silicon-on-insulator tunneling field-effect transistor von 李妤晨 张鹤鸣 张玉明 胡辉勇 王斌 娄永乐 周春宇

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Device physics and design of FD-SOI JLFET with step-gate-oxide structure to suppress GIDL effect von Wang, Bin, Shi, Xin-Long, Zhang, Yun-Feng, Chen, Yi, Hu, Hui-Yong, Wang, Li-Ming

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Physically-based modeling for hole scattering rate in strained Si1−xGex/(100)Si von Wang, Bin, Hu, Hui-yong, Zhang, He-ming, Song, Jian-jun, Zhang, Yu-ming

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Conduction Band Model of [110]/(001) Uniaxially Strained Si von Jian-Jun, Song, Chao, Yang, Guan-Yu, Wang, Chun-Yu, Zhou, Bing, Wang, Hui-Yong, Hu, He-Ming, Zhang

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The role of halogen bonding in improving OFET performance of a naphthalenediimide derivative von Li, Jing, Hu, Yong-Hui, Ge, Cong-Wu, Gong, He-Gui, Gao, Xi-Ke

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Double-gate tunnel field-effect transistor：Gate threshold voltage modeling and extraction von 李妤晨 张鹤鸣 胡辉勇 张玉明 王斌 周春宇

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Enhancement of off-state characteristics in junctionless field effect transistor using a field plate von Wang, Bin, Zhang, He-Ming, Hu, Hui-Yong, Shi, Xiao-Wei

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High-Frequency Capacitance--Voltage Characteristics of N-Type Metal--Oxide--Semiconductor Capacitor Based on Strained-Si/SiGe Architecture von Wang, Bin, Zhang, He-Ming, Hu, Hui-Yong, Shu, Bin, Zhang, Yu-Ming, Song, Jian-Jun

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Effect of substrate doping on threshold voltages of buried channel pMOSFET based on strained-SiGe technology von 王斌 张鹤鸣 胡辉勇 张玉明 周春宇 李妤晨

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Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator von Xu, Xiao-Bo (小波 徐), Zhang, He-Ming (鹤鸣 张), Hu, Hui-Yong (辉勇 胡), Li, Yu-Chen (妤晨 李), Qu, Jiang-Tao (江涛 屈)

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An analytical threshold voltage model for dual-strained channel PMOSFET von 秦珊珊 张鹤鸣 胡辉勇 戴显英 宣荣喜 舒斌

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Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors von 徐小波 张鹤鸣 胡辉勇 马建立

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The effect of substrate doping on the flatband and threshold voltages of a strained-Si pMOSFET von 王斌 张鹤鸣 胡辉勇 张玉明 周春宇 王冠宇 李妤晨

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Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator von 徐小波 张鹤鸣 胡辉勇 屈江涛

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Physically based analytical model for plateau in gate C-V characteristics of strained silicon pMOSFET von Wang, Bin, Zhang, He-ming, Hu, Hui-yong, Zhang, Yu-ming, Zhou, Chun-yu, Li, Yu-chen

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