Universal SNP Genotyping Assay with Fluorescence Polarization Detection von Hsu, T.M, Chen, X, Duan, S, Miller, R.D, Kwok, P.-Y

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The effects of AlN buffer on the properties of InN epitaxial films grown on Si(1 1 1) by plasma-assisted molecular-beam epitaxy von Wu, C.-L., Shen, C.-H., Chen, H.-Y., Tsai, S.-J., Lin, H.-W., Lee, H.-M., Gwo, S., Chuang, T.-F., Chang, H.-S., Hsu, T.M.

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Composition dependent Raman scattering of ZnSe1−xOx von Cheng, C.-C., Chen, W.-Y., Ke, H.-H., Chen, C.-Y., Chyi, J.-I., Hsu, T.M.

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Composition dependent Raman scattering of von Cheng, C.-C., Chen, W.-Y., Ke, H.-H., Chen, C.-Y., Chyi, J.-I., Hsu, T.M.

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Material and ultrafast optoelectronic properties of furnace-annealed arsenic-ion-implanted GaAs von Gong-Ru Lin, Wen-Chung Chen, Chang, C.-S., Shyh-Chin Chao, Kaung-Hsiung Wu, Hsu, T.M., Lee, W.C., Ci-Ling Pan

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Catalyst-free growth of indium nitride nanorods by chemical-beam epitaxy von Chao, C. K., Chyi, J.-I., Hsiao, C. N., Kei, C. C., Kuo, S. Y., Chang, H.-S., Hsu, T. M.

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Localized states in epitaxial film von Chang, H.-S., Hsu, T.M., Chuang, T.-F., Chen, W.-Y., Gwo, S., Shen, C.-H.

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Localized states in In x Ga 1 − x N epitaxial film von Chang, H.-S., Hsu, T.M., Chuang, T.-F., Chen, W.-Y., Gwo, S., Shen, C.-H.

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Photoreflectance of low-temperature-grown GaAs on Si-δ-doped GaAs von Lee, W.C., Hsu, T.M., Chyi, J.-I.

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Coherence properties of InAs quantum dot emissions from quasi-L2 photonic crystal nanocavities von Chen, W.-Y., Yang, F.-S., Chang, H.-S., Cheng, C.-C., Wang, C.-J., Chiu, P.-C., Chyi, J.-I., Hsu, T.M.

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The electron-phonon contribution to the energy gap in CuInS2 von HSU, T. M

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A novel method to grow large CuInS2 single crystals von Hsu, H.J., Yang, M.H., Tang, R.S., Hsu, T.M., Hwang, H.L.

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Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments von Lee, S.W, Chen, L.J, Chen, P.S, Tsai, M.-J, Liu, C.W, Chen, W.Y, Hsu, T.M

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Analysis of Cracks at Attachment Lugs von Hsu, T.M

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Rapid thermal annealing of the through-film silicon implantation on GaAs von Huang, F.S., Chen, W.S., Hsu, T.M., Lee, C.W.

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Room temperature 1.3 and 1.5 μm electroluminescence from Si/Ge quantum dots (QDs)/Si multi-layers von Pei, Z, Chen, P.S, Lee, S.W, Lai, L.S, Lu, S.C, Tsai, M.-J, Chang, W.H, Chen, W.Y, Chou, A.T, Hsu, T.M

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Type-II Zn 1− xMn xSe/ZnSe 1− yTe y quantum wells von Yang, C.S., Cheng, C.C., Kuo, M.C., Tseng, P.Y., Shen, J.L., Lee, J., Chou, W.C., Jeng, S., Lai, C.Y., Hsu, T.M., Chyi, J.I.

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Type-II Zn1-xMnxSe/ZnSe1-yTey quantum wells von YANG, C. S, CHENG, C. C, CHYI, J. I, KUO, M. C, TSENG, P. Y, SHEN, J. L, LEE, J, CHOU, W. C, JENG, S, LAI, C. Y, HSU, T. M

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The electron-phonon contribution to the energy gap in CuInS 2 von Hsu, T.M.

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A Carrier Escape Study from InAs Self-Assembled Quantum Dots by Photocurrent Measurement von Chang, W.-H., Hsu, T.M., Huang, C.C., Hsu, S.L., Lai, C.Y., Yeh, N.T., Chyi, J.-I.

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