Pattern-Transfer Fidelity in Soft Lithography: The Role of Pattern Density and Aspect Ratio von Lee, T.-W., Mitrofanov, O., Hsu, J. W. P.

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Sequential Nucleation and Growth of Complex Nanostructured Films von Sounart, T. L., Liu, J., Voigt, J. A., Hsu, J. W. P., Spoerke, E. D., Tian, Z., Jiang, Y. B.

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Luminescent properties of solution-grown ZnO nanorods von Hsu, J. W. P., Tallant, D. R., Simpson, R. L., Missert, N. A., Copeland, R. G.

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Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates von Hsu, J. W. P., Manfra, M. J., Molnar, R. J., Heying, B., Speck, J. S.

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Broadband Terahertz Refraction Index Dispersion and Loss of Polymeric Dielectric Substrate and Packaging Materials von Motaharifar, E., Pierce, R. G., Islam, R., Henderson, R., Hsu, J. W. P., Lee, Mark

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Impurity effects on photoluminescence in lateral epitaxially overgrown GaN von HSU, J. W. P, SCHREY, F. F, MATTHEWS, M. J, GU, S. L, KUECH, T. F

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Surface morphology and electronic properties of dislocations in AlGaN/GaN heterostructures von HSU, J. W. P, MANFRA, M. J, LANG, D. V, BALDWIN, K. W, PFEIFFER, L. N, MOLNAR, R. J

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Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes von Hsu, J. W. P., Manfra, M. J., Lang, D. V., Richter, S., Chu, S. N. G., Sergent, A. M., Kleiman, R. N., Pfeiffer, L. N., Molnar, R. J.

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Scanning force microscopy studies of GaAs films grown on offcut Ge substrates von XU, Q, HSU, J. W. P, TING, S. M, FITZGERALD, E. A, SIEG, R. M, RINGEL, S. A

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Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy von Hsu, J. W. P., Manfra, M. J., Chu, S. N. G., Chen, C. H., Pfeiffer, L. N., Molnar, R. J.

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Soft-Contact Optical Lithography Using Transparent Elastomeric Stamps and Application to Nanopatterned Organic Light-Emitting Devices von Lee, T.-W., Jeon, S., Maria, J., Zaumseil, J., Hsu, J. W. P., Rogers, J. A.

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Surface chemistry and surface electronic properties of ZnO single crystals and nanorods von Uhlrich, J. J., Olson, D. C., Hsu, J. W. P., Kuech, T. F.

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High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy von Manfra, M. J., Pfeiffer, L. N., West, K. W., Stormer, H. L., Baldwin, K. W., Hsu, J. W. P., Lang, D. V., Molnar, R. J.

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High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy von Manfra, M. J., Weimann, N. G., Hsu, J. W. P., Pfeiffer, L. N., West, K. W., Syed, S., Stormer, H. L., Pan, W., Lang, D. V., Chu, S. N. G., Kowach, G., Sergent, A. M., Caissie, J., Molvar, K. M., Mahoney, L. J., Molnar, R. J.

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Influence of Ga vs As prelayers on GaAs/Ge growth morphology von XU, Q, HSU, J. W. P, FITZGERALD, E. A, KUO, J. M, XIE, Y. H, SILVERMAN, P. J

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Near-Field Scanning Optical Microscopy Studies of Materials and Devices von Hsu, J.W.P.

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SINGLE-CRYSTAL EPITAXIAL THIN-FILMS OF THE ISOTROPIC METALLIC OXIDES SR1-XCAXRUO3 (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) von EOM, CB, CAVA, RJ, FLEMING, RM, PHILLIPS, JM, VANDOVER, RB, MARSHALL, JH, HSU, JWP, KRAJEWSKI, JJ, PECK, WF

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Impurity band in the interfacial region of GaN films grown by hydride vapor phase epitaxy von HSU, J. W. P, LANG, D. V, RICHTER, S, KLEIMAN, R. N, SERGENT, A. M, LOOK, D. C, MOLNAR, R. J

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Dislocation and morphology control during molecular-beam epitaxy of AlGaN/GaN heterostructures directly on sapphire substrates von Manfra, M. J., Weimann, N. G., Hsu, J. W. P., Pfeiffer, L. N., West, K. W., Chu, S. N. G.

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Spatial distribution of yellow luminescence related deep levels in GaN von Hsu, J. W. P., Schrey, F. F., Ng, H. M.

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