Thin single-crystal Sc2O3 films epitaxially grown on Si (111)-structure and electrical properties von CHEN, C. P, HONG, M, KWO, J, CHENG, H. M, HUANG, Y. L, LIN, S. Y, CHI, J, LEE, H. Y, HSIEH, Y. F, MANNAERTS, J. P

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Design and experiment of a small boat track-keeping autopilot von Lee, S.D., Yu, C.H., Hsiu, K.Y., Hsieh, Y.F., Tzeng, C.Y., Kehr, Y.Z.

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Properties of Liposomes Prepared with Various Lipids von Hsieh, Y.F, Chen, T.L, Wang, Y.T, Chang, J.H, Chang, H.M

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Interfacial reactions of palladium thin films on Ge(111) and Ge(001) von Hsieh, Y.F., Chen, L.J.

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Partial epitaxial growth of Ni2Ge and NiGe on Ge(111) von Hsieh, Y.F., Chen, L.J., Marshall, E.D., Lau, S.S.

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Thin single-crystal Sc 2O 3 films epitaxially grown on Si (1 1 1)—structure and electrical properties von Chen, C.P., Hong, M., Kwo, J., Cheng, H.M., Huang, Y.L., Lin, S.Y., Chi, J., Lee, H.Y., Hsieh, Y.F., Mannaerts, J.P.

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Enhancement of C-49 to C-54 TiSi 2 phase transformation on (001)Si with an ultrathin TiN seed layer von Peng, Y.C, Chen, L.J, Hsieh, W.Y, Yang, Y.R, Hsieh, Y.F

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Enhancement of C-49 to C-54 TiSi2 phase transformation on (001)Si with an ultrathin TiN seed layer von PENG, Y. C, CHEN, L. J, HSIEH, W. Y, YANG, Y. R, HSIEH, Y. F

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Design rule related defects formation von Hsieh, Y.F., Tsui, B.Y.

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Dislocation multiplication inside contact holes von Hsieh, Y.F., Hwang, Y.C., Fu, J.M., Tsou, Y.M., Peng, Y.C., Chen, L.J.

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Design Rule Related Defects Formation von Hsieh, Y.F., Tsui, B.Y.

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Nanofabrication on InP using focused ion beam lithography and Cl 2 etching: process and control von Chu, C.H., Wang, Y.L., Hsieh, Y.F., Harriott, L.R., Wade, H.H., Temkin, H., Hamm, R.A.

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Magnetic properties and microstructure of Fe sub 4 N and (Fe,Ni) sub 4 N von Chen, S.K., Jin, S., Tiefel, T.H., Hsieh, Y.F., Gyorgy, E.M., Johnson, D.W. Jr

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Observation of reduced current thresholds in GaAs/AlGaAs vertical-cavity surface-emitting lasers grown on 4 degree off-orientation (001) GaAs substrates von Wang, Y.H., Tai, K., Hsieh, Y.F., Chu, S.N.G., Wynn, J.D., Cho, A.Y.

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Partial epitaxial growth of Ni 2Ge and NiGe on Ge(111) von Hsieh, Y.F., Chen, L.J., Marshall, E.D., Lau, S.S.

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Nanofabrication on InP using focused ion beam lithography and Cl2 etching : process and control von CHU, C. H, WANG, Y. L, HSIEH, Y. F, HARRIOTT, L. R, WADE, H. H, TEMKIN, H, HAMM, R. A

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Suppression of dislocation multiplication inside contact holes von Peng, Y.C., Chen, L.J., Hsieh, Y.F.

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Reduced current thresholds in GaAs/AlGaAs vertical cavity surface emitting lasers using 4° off-oriented (001) GaAs substrates von Wang, Y.H., Tai, K., Hsieh, Y.F., Chu, S.N.G., Wynn, J.D., Hong, M., Fischer, R.J., Cho, A.Y.

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Circuitry analyses by using high quality image acquisition and multi-layer image merge technique von Yao, H.P., Qi Zhong, Vic Ku, Lo, C.K., Wu, Y.R., Hsieh, Y.F.

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A Dual-Mode Radio Frequency DNA Sensor von Chien, J.H., Chang, C.H., Hsieh, Y.F., Lee, D.S., Kuo, L.S., Yang, C.H., Yang, C.R., Chou, W.P., Chen, P.H.

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