Direct observation of spinodal decomposition phenomena in InAlN alloys during in-situ STEM heating von Palisaitis, J., Hsiao, C.-L., Hultman, L., Birch, J., Persson, P. O. Å.

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Effects of 150-1000 eV Electron Impacts on Pure Carbon Monoxide Ices Using the Interstellar Energetic-Process System (IEPS) von Huang, C.-H., Ciaravella, A., Cecchi-Pestellini, C., Jiménez-Escobar, A., Hsiao, L.-C., Huang, C.-C., Chen, P.-C., Sie, N.-E., Chen, Y.-J.

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Accretion and photodesorption of CO ice as a function of the incident angle of deposition von González Díaz, C, Carrascosa de Lucas, H, Aparicio, S, Muñoz Caro, G M, Sie, N-E, Hsiao, L-C, Cazaux, S, Chen, Y-J

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Electronic-grade GaN(0001)/Al2O3(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target von Junaid, M., Hsiao, C.-L., Palisaitis, J., Jensen, J., Persson, P. O. Å., Hultman, L., Birch, J.

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Stacking fault related luminescence in GaN nanorods von Forsberg, M, Serban, A, Poenaru, I, Hsiao, C-L, Junaid, M, Birch, J, Pozina, G

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Thermal stability of Al1−xInxN (0001) throughout the compositional range as investigated during in situ thermal annealing in a scanning transmission electron microscope von Palisaitis, J., Hsiao, C.-L., Hultman, L., Birch, J., Persson, P.O.Å.

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Polarization of stacking fault related luminescence in GaN nanorods von Pozina, G., Forsberg, M., Serban, E. A., Hsiao, C.-L., Junaid, M., Birch, J., Kaliteevski, M. A.

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Assessing structural, free-charge carrier, and phonon properties of mixed-phase epitaxial films: The case of InN von Xie, M.-Y., Schubert, M., Lu, J., Persson, P. O. Å., Stanishev, V., Hsiao, C. L., Chen, L. C., Schaff, W. J., Darakchieva, V.

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Prehypertension is associated with insulin resistance von Hwu, C.-M., Liou, T.-L., Hsiao, L.-C., Lin, M.-W.

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Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material von Darakchieva, V., Lorenz, K., Barradas, N. P., Alves, E., Monemar, B., Schubert, M., Franco, N., Hsiao, C. L., Chen, L. C., Schaff, W. J., Tu, L. W., Yamaguchi, T., Nanishi, Y.

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Excitons and biexcitons in InGaN quantum dot like localization centers von Amloy, S, Karlsson, K F, Eriksson, M O, Palisaitis, J, Persson, P O Å, Chen, Y T, Chen, K H, Hsu, H C, Hsiao, C L, Chen, L C, Holtz, P O

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Dynamic characteristics of the exciton and the biexciton in a single InGaN quantum dot von Amloy, S., Moskalenko, E. S., Eriksson, M., Karlsson, K. F., Chen, Y. T., Chen, K. H., Hsu, H. C., Hsiao, C. L., Chen, L. C., Holtz, P. O.

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Reliability Analysis and Updating of Excavation-Induced Ground Settlement for Building Serviceability Assessment von Hsiao, Evan C, Schuster, Matt, Juang, C. Hsein, Kung, Gordon T

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Auger recombination in InN thin films von Jang, D.-J., Lin, G.-T., Hsiao, C.-L., Tu, L. W., Lee, M.-E.

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Bending of Soft Micropatterns in Elastohydrodynamic Lubrication Tribology von Peng, Y., Serfass, C. M., Hill, C. N., Hsiao, L. C.

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Structural anisotropy of nonpolar and semipolar InN epitaxial layers von Darakchieva, V., Xie, M.-Y., Franco, N., Giuliani, F., Nunes, B., Alves, E., Hsiao, C. L., Chen, L. C., Yamaguchi, T., Takagi, Y., Kawashima, K., Nanishi, Y.

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Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy von Tu, L. W., Hsiao, C. L., Chi, T. W., Lo, I., Hsieh, K. Y.

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Epitaxial Growth of InN Films by Molecular-Beam Epitaxy Using Hydrazoic Acid (HN3) as an Efficient Nitrogen Source von Chen, J. T, Hsiao, C. L, Hsu, H. C, Wu, C. T, Yeh, C. L, Wei, P. C, Chen, L. C, Chen, K. H

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Energy relaxation of InN thin films von Jang, D.-J., Lin, G.-T., Wu, C.-L., Hsiao, C.-L., Tu, L. W., Lee, M.-E.

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Improvement of glycaemia control in subjects with type 2 diabetes by self-monitoring of blood glucose: comparison of two management programs adjusting bedtime insulin dosage von Chen, H.-S., Wu, T.-E., Jap, T.-S., Lin, S.-H., Hsiao, L.-C., Lin, H.-D.

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