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  1. 1
    A Method for Yield and Scaling Characterization of FETs in an InGaP/GaAs Merged HBT-FET (BiFET) Technology

    A Method for Yield and Scaling Characterization of FETs in an InGaP/GaAs Merged HBT-FET (BiFET) Technology von Metzger, Andre G., Jiang Li, Yota, Jiro, Hsiang-Chih Mike Sun, Ramanathan, Ravi, Cismaru, Cristian


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  2. 2
    An InGaP/GaAs Merged HBT-FET (BiFET) Technology and Applications to the Design of Handset Power Amplifiers

    An InGaP/GaAs Merged HBT-FET (BiFET) Technology and Applications to the Design of Handset Power Amplifiers von Metzger, A.G., Ramanathan, R., Jiang Li, Hsiang-Chih Sun, Cismaru, C., Hongxiao Shao, Rushing, L., Weller, K.P., Ce-Jun Wei, Yu Zhu, Klimashov, A., Tkachenko, Y.A., Bin Li, Zampardi, P.J.


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