Self-organized growth of regular nanometer-scale InAs dots on GaAs von Moison, J. M., Houzay, F., Barthe, F., Leprince, L., André, E., Vatel, O.

Volltext

First stages of the MBE growth of InAs on (001)GaAs von Houzay, F., Guille, C., Moison, J.M., Henoc, P., Barthe, F.

Volltext

Surface segregation in III–V alloys von Moison, J.M., Houzay, F., Barthe, F., Gérard, J.M., Jusserand, B., Massies, J., Turco-Sandroff, F.S.

Volltext

Intermixing at InAs/GaAs and GaAs/InAs interfaces von Guille, C., Houzay, F., Moison, J.M., Barthe, F.

Volltext

Interaction of atomic hydrogen with native oxides on InP(100) von Petit, E.J., Houzay, F., Moison, J.M.

Volltext

Self-organized growth of InAs/GaAs quantum boxes von MOISON, J. M, LEPRINCE, L, BARTHE, F, HOUZAY, F, LEBOUCHE, N, GERARD, J. M, MARZIN, J. Y

Volltext

Photo-assisted deposition of thin films on III–V semiconductors with UV and IR lamps von Nissim, Y.I., Moison, J.M., Houzay, F., Lebland, F., Licoppe, C., Bensoussan, M.

Volltext

Near-surface GaAs/Ga0.7Al0.3As quantum wells : interaction with the surface states von MOISON, J. M, ELCESS, K, HOUZAY, F, MARZIN, J. Y, GERARD, J. M, BARTHE, F, BENSOUSSAN, M

Volltext

Chemical and morphological aspects of the build-up of the interface between InP(100) and column III metal overlayers von Houzay, F., Bensoussan, M., Barthe, F.

Volltext

Surface segregation of third-column atoms in III–V ternary arsenides von Houzay, F., Moison, J.M., Guille, C., Barthe, F., Van Rompay, M.

Volltext

Surface localization of the photochemical vapor deposition of SiO2 on InP at low pressure and room temperature von HOUZAY, F, MOISON, J. M, SEBENNE, C. A

Volltext

Surface segregation of third-column atoms in group III-V arsenide compounds: ternary alloys and heterostructures von MOISON, J. M, GUILLE, C, HOUZAY, F, BARTHE, F, VAN ROMPAY, M

Volltext

Early stages in the formation of the oxide-InP(110) interface von Hollinger, G., Hughes, G., Himpsel, F.J., Jordan, J.L., Morar, J.F., Houzay, F.

Volltext

Epitaxial regrowth of an InAs surface on InP: an example of artificial surfaces von MOISON, J. M, BENSOUSSAN, M, HOUZAY, F

Volltext

DIFFERENCES IN THE SIO2/INP INTERFACES OBTAINED BY THERMAL AND UV-INDUCED CHEMICAL VAPOR-DEPOSITION von LICOPPE, C, DEBAUCHE, C, HOUZAY, F, FLICSTEIN, J, NISSIM, YI, MOISON, JM

Volltext

Angle resolved photoemission valence band dispersions E(k) for gaP von Solal, F., Jezequel, G., Houzay, F., Barski, A., Pinchaux, R.

Volltext

The formation of the GaInP(100) interface von Houzay, F., Bensoussan, M., Guille, C., Barthe, F.

Volltext

Passivation of Si (111) surfaces by ordered metal layers von Cros, A., Houzay, F., Guichar, G.M., Pinchaux, R.

Volltext

Thermal and photon-assisted interaction of ammonia, silane and oxygen with indium phosphide substrates von Houzay, F, Moison, J.M., Licoppe, C, Nissim, Y.I.

Volltext

Cw laser processing of semiconductor surfaces von MOISON, J. M, LICOPPE, C, NISSIM, Y. I, HOUZAY, F

Volltext