Quality optimization of liquid phase deposition SiO2 films on gallium arsenide von Houng, M.P, Wang, Y.H, Huang, C.J, Huang, S.P, Horng, J.-H

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Intra-level voltage ramping-up to dielectric breakdown failure on Cu/porous low-k interconnections in 45nm ULSI generation von Huang, C.H., Wang, N.F., Tsai, Y.Z., Hung, C.I., Houng, M.P.

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Intra-level voltage ramping-up to dielectric breakdown failure on Cu/porous low- k interconnections in 45 nm ULSI generation von Huang, C.H., Wang, N.F., Tsai, Y.Z., Hung, C.I., Houng, M.P.

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The formation of a SiOx interfacial layer on low-k SiOCH materials fabricated in ULSI application von Huang, C.H., Wang, N.F., Tsai, Y.Z., Liu, C.C., Hung, C.I., Houng, M.P.

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The formation of a SiO x interfacial layer on low- k SiOCH materials fabricated in ULSI application von Huang, C.H., Wang, N.F., Tsai, Y.Z., Liu, C.C., Hung, C.I., Houng, M.P.

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Titanium nitride diffusion barrier for copper metallization on gallium arsenide von Chen, H.C., Tseng, B.H., Houng, M.P., Wang, Y.H.

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Characteristics of ZnCdTe grown on (100) GaAs substrate by MOCVD von Sze, P.W., Wang, N.F., Houng, M.P., Wang, Y.H., Cherng, Y.T., Wang, C.H.

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Liquid phase deposited SiO2 on GaN von WU, H. R, LEE, K. W, HO, C. H, CHIANG, C. I, CHERN, Y. T, JUANG, F. S, WEN, T. C, LEE, W. I, CHYI, J. I, NIAN, T. B, CHOU, D. W, HUANG WU, J. J, WANG, Y. H, HOUNG, M. P, SZE, P. W, SU, Y. K, CHANGE, S. J

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Gate-recessed delta-doping enhancement-mode Al0.2Ga0.8As/In0.15Ga0.85As PHEMTs using a new citric buffer etchant von Yarn, K.F., Liao, C.I., Wang, Y.H., Houng, M.P., Chure, M.C.

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Gate-recessed delta-doping enhancement-mode Al 0.2Ga 0.8As/In 0.15Ga 0.85As PHEMTs using a new citric buffer etchant von Yarn, K.F., Liao, C.I., Wang, Y.H., Houng, M.P., Chure, M.C.

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Modeling of threshold voltage and subthreshold swing of short-channel SOI MESFET's von Chiang, T.K., Wang, Y.H., Houng, M.P.

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Effect of fluorine on metal-insulator-silicon solar cell performance with an low-temperature deposited SiO 2 layer von Houng, M.P., Wang, Y.H., Wang, N.F., Chang, W.J., Hung, C.I.

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Characterization of FaAs epitaxial layers by low pressure MOVPE using TEG as Ga source von Chang, C.Y., Su, Y.K., Lee, M.K., Chen, L.G., Houng, M.P.

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Effect of fluorine on metal-insulator-silicon solar cell performance with an low-temperature deposited SiO2 layer von HOUNG, M. P, WANG, Y. H, WANG, N. F, CHANG, W. J, HUNG, C. I

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Liquid phase deposited SiO 2 on GaN von Wu, H.R., Lee, K.W., Nian, T.B., Chou, D.W., Wu, J.J.Huang, Wang, Y.H., Houng, M.P., Sze, P.W., Su, Y.K., Chang, S.J., Ho, C.H., Chiang, C.I., Chern, Y.T., Juang, F.S., Wen, T.C., Lee, W.I., Chyi, J.I.

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Investigation of resonant interband tunneling structures using a three-band [formula omitted] model von Liu, M.H., Wang, Y.H., Houng, M.P.

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Quality optimization of liquid phase deposition SiO 2 films on gallium arsenide von Houng, M.P, Wang, Y.H, Huang, C.J, Huang, S.P, Horng, J.-H

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Influence of quantum capture and tunneling mechanisms on the dark current of bound-to-continuum quantum-well infrared photodetectors von Chu, C.H., Hung, C.I., Wang, Y.H., Houng, M.P.

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Effects of inelastic scattering on resonant interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures von Liu, M.H, Wang, Y.H, Houng, M.P

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Effect of Fluorine Concentration on the Metal-Insulator-Semiconductor (MIS) Solar Cell Output Performance by Liquid Phase Deposition von Huang, Chien-Jung, Houng, Mau-Phon, Wang, Yeong-Her, Wang, Na-Fu, Chang, Wai-Jyh

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