Direct imaging of surface cusp evolution during strained-layer epitaxy and implications for strain relaxation von JESSON, D. E, PENNYCOOK, S. J, BARIBEAU, J.-M, HOUGHTON, D. C

Volltext

Atomistic processes of surface segregation during SiGe MBE growth von Jesson, D.E., Pennycook, S.J., Baribeau, J.-M., Houghton, D.C.

Volltext

Drift hole mobility in strained and unstrained doped Si/sub 1-x/Ge/sub x/ alloys von Manku, T., McGregor, J.M., Nathan, A., Roulston, D.J., Noel, J.-P., Houghton, D.C.

Volltext

Equilibrium solubility and composition of mixed carbonitrides in microalloyed austenite von Houghton, D.C.

Volltext

Updated conservation status of protected Minnesota caddisflies von Houghton, D.C, Holzenthal, R.W

Volltext

New technique for the characterization of Si/SiGe layers using heterostructure MOS capacitors von Voinigescu, S.P., Iniewski, K., Lisak, R., Salama, C.A.T., Noél, J.-P., Houghton, D.C.

Volltext

Heterogeneous nucleation sources in molecular beam epitaxy-grown GexSi1−x/Si strained layer superlattices von Perovic, D.D., Weatherly, G.C., Baribeau, J.-M., Houghton, D.C.

Volltext

Photoluminescence study of SiGe quantum well broadening by rapid thermal annealing von Lafontaine, H., Houghton, D.C., Rowell, N., Aers, G.C., Rinfret, R.

Volltext

Electroluminescence and photoluminescence from Si 1− xGe x alloys grown on (100) silicon by molecular beam epitaxy von Houghton, D.C., Noël, J.-P., Rowell, N.L.

Volltext

Output conductance of bipolar transistors with large neutral-base recombination current von McGregor, J.M., Roulston, D.J., Noel, J.-P., Houghton, D.C.

Volltext

Comparison of chemical beam epitaxy and metalorganic chemical vapour deposition for highly strained multiple quantum well InGaAsP/InP 1.5 μm lasers von Houghton, D.C., Davies, M., Sudersena Rao, T., Dion, M.

Volltext

Jesson [ital et] [ital al]. reply von Jesson, D.E., Pennycook, S.J., Tischler, J.Z., Budai, J.D., Baribeau, J., Houghton, D.C.

Volltext

Early-voltage degradation in heterostructure bipolar transistors due to interface states von Mohajerzadeh, S., Selvakumar, C.R., Noel, J.P., Houghton, D.C.

Volltext

Interplay between evolving surface morphology, atomic-scale growth modes, and ordering during Si[sub [ital x]]Ge[sub 1[minus][ital x]] epitaxy von Jesson, D.E., Pennycook, S.J., Tischler, J.Z., Budai, J.D., Baribeau, J., Houghton, D.C.

Volltext

The structural stability of uncapped versus buried Si1−xGex strained layers through high temperature processing von Houghton, D.C., Gibbings, C.J., Tuppen, C.G., Lyons, M.H., Halliwell, M.A.G.

Volltext

Observation of confinement effects on acceptors in Si/Si 1−xGe x superlattices von Navarro-Contreras, H., Brito-Orta, R.A., Timusk, T., Datars, W.R., Houghton, D.C.

Volltext

Observation of confinement effects on acceptors in Si/Si1-xGex superlattices von NAVARRO-CONTRERAS, H, BRITO-ORTA, R. A, TIMUSK, T, DATARS, W. R, HOUGHTON, D. C

Volltext

Heterogeneous nucleation sources in molecular beam epitaxy-grown Ge xSi 1− x/Si strained layer superlattices von Perovic, D.D., Weatherly, G.C., Baribeau, J.-M., Houghton, D.C.

Volltext

Demonstration of a Si/SiGe optoelectronic reset-set flip-flop based on an inversion-channel heterostructure von Vetter, A., Kovacic, S.J., Simmons, J.G., Noël, J.P., Houghton, D.C.

Volltext

Characterization of MBE grown Si/GexSi1−x strained layer superlattices von Houghton, D.C., Lockwood, D.J., Dharma-Wardana, M.W.C., Fenton, E.W., Baribeau, J.-M., Denhoff, M.W.

Volltext