Lattice engineered compliant substrate for defect-free heteroepitaxial growth von Ejeckam, F. E., Lo, Y. H., Subramanian, S., Hou, H. Q., Hammons, B. E.

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Dislocation-free InSb grown on GaAs compliant universal substrates von Ejeckam, F. E., Seaford, M. L., Lo, Y.-H., Hou, H. Q., Hammons, B. E.

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Fuzzy Backstepping Sliding Mode Control for Mismatched Uncertain System von Hou, H. Q., Miao, Q., Gao, Q. H., Aorue, Bunam T.

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InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor von Chang, P. C., Baca, A. G., Li, N. Y., Xie, X. M., Hou, H. Q., Armour, E.

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Electrophysiological subtypes and long term prognosis of Guillain-Barré syndrome von Zhang, J, Song, X J, Hou, H Q, Tan, G J, Bian, G Y, Li, B, Chen, L P, Wang, L, Guo, L

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InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor von Chang, P. C., Baca, A. G., Li, N. Y., Sharps, P. R., Hou, H. Q., Laroche, J. R., Ren, F.

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Coherent Dynamics of Excitonic Nonlinear Optical Response in the Nonperturbative Regime von Wang, Hailin, Hou, H. Q., Hammons, B. E.

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Significant operating voltage reduction on high-speed GaAs-based heterojunction bipolar transistors using a low band gap InGaAsN base layer von Monier, C., Baca, A.G., Ping-Chih Chang, Newman, F.D., Li, N.Y., Sun, S.Z., Armour, E., Hou, H.Q.

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Advances in selective wet oxidation of AlGaAs alloys von Choquette, K.D., Geib, K.M., Ashby, C.I.H., Twesten, R.D., Blum, O., Hou, H.Q., Follstaedt, D.M., Hammons, B.E., Mathes, D., Hull, R.

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Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor von Chang, P.C., Li, N.Y., Baca, A.G., Hou, H.Q., Monier, C., Laroche, J.R., Ren, F., Pearton, S.J.

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Monolithic, multiple-wavelength vertical-cavity surface-emitting laser arrays by surface-controlled MOCVD growth rate enhancement and reduction von Ortiz, G.G., Luong, S.Q., Sun, S.Z., Cheng, J., Hou, H.Q., Vawter, G.A., Hammons, B.E.

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High-speed InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistors with low turn-on voltage von Chang, P.C, Monier, C, Baca, A.G, Li, N.Y, Newman, F, Armour, E, Hou, H.Q

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In situ control as composition in InAsP and InGaAsP grown by gas-source molecular beam epitaxy von HOU, H. Q, TU, C. W

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Double-disk structure for output coupling in microdisk lasers von Chu, D. Y., Chin, M. K., Bi, W. G., Hou, H. Q., Tu, C. W., Ho, S. T.

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Optical property of InAsP/InP strained quantum wells grown on InP (111) B and (100) substrates von Hou, H. Q., Tu, C. W.

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Monolithic wavelength-graded VCSEL and resonance-enhanced photodetector arrays for parallel optical interconnects von Luong, S.Q., Ortiz, G.G., Zhou, Y., Jun Lu, Hains, C.P., Cheng, J., Hou, H.Q., Vawter, G.A.

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Highly uniform and reproducible vertical-cavity surface-emitting lasers grown by metalorganic vapor phase epitaxy with in situ reflectometry von Hou, H.Q., Chui, H.C., Choquette, K.D., Hammons, B.E., Breiland, W.G., Geib, K.M.

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VCSELs bonded directly to foundry fabricated GaAs smart pixel arrays von Rui Pu, Hayes, E.M., Jurrat, R., Wilmsen, C.W., Choquette, K.D., Hou, H.Q., Geib, K.M.

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In situ etching of GaAs by AsCl3 for regrowth on AlGaAs in metalorganic vapor-phase epitaxy von HOU, H. Q, HAMMONS, B. E, BREILAND, W. G

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Spontaneous emission factor in oxide confined vertical-cavity lasers von Kuksenkov, D. V., Temkin, H., Lear, K. L., Hou, H. Q.

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