Identification of Channel Hot Carrier Stress-Induced Oxide Traps Leading to Random Telegraph Signals in pMOSFETs von Ahmed, Tanvir, Celik-Butler, Zeynep, Hou, Fan-Chi, Tang, Shaoping, Mathur, Guru

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A Stand-Alone, Physics-Based, Measurement-Driven Model and Simulation Tool for Random Telegraph Signals Originating From Experimentally Identified MOS Gate-Oxide Defects von Nour, Mohamed, Celik-Butler, Zeynep, Sonnet, Arif, Fan-Chi Hou, Shaoping Tang, Mathur, Guru

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Two Types of ^ Centers as Gate Oxide Defects Responsible for Hole Trapping and Random Telegraph Signals in pMOSFETs von Shamsur Rouf, A.S.M., Celik-Butler, Zeynep, Hou, Fan-Chi, Tang, Shaoping, Mathur, Guru

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Simulation of oxide trapping noise in submicron n-channel MOSFETs von Fan-Chi Hou, Bosman, G., Law, M.E.

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A Physical Understanding of RF Noise in Bulk nMOSFETs With Channel Lengths in the Nanometer Regime von Mahajan, V. M., Patalay, P. R., Jindal, R. P., Shichijo, H., Martin, S., Hou, F., Machala, C., Trombley, D. E.

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Maximum allowable bulk defect density for generation-recombination noise-free device operation von Fan-Chi Hou, Bosman, G., Law, M.E.

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A Physics-Based Analytical \hbox/f Noise Model for RESURF LDMOS Transistors von Mahmud, M. I., Celik-Butler, Z., Pinghai Hao, Srinivasan, P., Fan-Chi Hou, Xu Cheng, Amey, B. L., Pendharkar, S.

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Variability of random telegraph noise in analog MOS transistors von Nour, Mohamed, Mahmud, M. Iqbal, Celik-Butler, Zeynep, Basu, Debarshi, Shaoping Tang, Fan-Chi Hou, Wise, Rick

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Review of LDMOS time dependent degradation based on low-frequency noise modeling von Mahmud, M. Iqbal, Celik-Butler, Zeynep, Pinghai Hao, Srinivasan, Purushothaman, Fan-Chi Hou

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Characterization of generation–recombination noise using a physics-based device noise simulator von Hou, Fan-Chi, Bosman, Gijs, Law, Mark E.

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A Physics-Based Analytical 1/f Noise Model for RESURF LDMOS Transistors : ADVANCED MODELING OF POWER DEVICES AND THEIR APPLICATIONS von IQBAL MAHMUD, M, CELIK-BUTLER, Zeynep, PINGHAI HAO, SRINIVASAN, Purushothaman, HOU, Fan-Chi, XU CHENG, AMEY, Benjamin L, PENDHARKAR, Sameer

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Device physics origin and solutions to threshold voltage fluctuations in sub 130 nm CMOS incorporating halo implant von Edwards, H., Chatterjee, T., Kassem, M., Gomez, G., Fan-Chi Hou, Xiaoju Wu

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High-frequency noise measurements on MOSFETs with channel-lengths in sub-100 nm regime von Patalay, P.R., Jindal, R.P., Shichijo, H., Martin, S., Fan-Chi Hou, Trombley, D.

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Numerical investigation of excess RF channel noise in sub-100 nm MOSFETs von Mahajan, V.M., Jindal, R.P., Shichijo, H., Martin, S., Fan-Chi Hou, Trombley, D.

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Simulation of oxide trapping noise in submicron n-channel MOSFETs von Hou, Fan-Chi, Bosman, G, Law, M E

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Bulk defect induced low-frequency noise in n(+)-p silicondiodes von Hou, Fan-Chi, Bosman, G, Simoen, E, Vanhellemont, J, Claeys, C

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Bulk defect induced low-frequency noise in n/sup +/-p silicon diodes von Fan-Chi Hou, Bosman, G., Simoen, E., Vanhellemont, J., Claeys, C.

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Parametric DC and noise measurements in a unified test & characterization software tool framework von Rodriguez, Jose A., Jimenez, Manuel, Morales, William, Fan-Chi Hou, Millan, Lucianne, Palomera, Rogelio

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JFET structure for integrated circuit and fabrication method von Hao, Pinghai, Hou, Fan-Chi, Khan, Imran

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Gate self aligned low noise JFET von Wu, Xiaoju, Hou, Fan-Chi Frank, Hao, Pinghai

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