AWG-spectrometer to analyze absorption spectra of optical gas sensors fabricated by femtosecond laser processing von Zehetner, Johann, Seyringer, Dana, Dohnal, Fadi, Serecunova, Stanislava, Seyringer, Heinz, Hotovy, Ivan, Mikolasek, Miroslav, Ondrejka, Peter, Hotovy, Juraj, Rehacek, Vlastimil

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Structural Evolution of Sputtered Indium Oxide Thin Films von Hotový, Ivan, Kups, Thomas, Hotový, Juraj, Liday, Jozef, Búc, Dalibor, Čaplovičová, Mária, Řeháček, Vlastimil, Sitter, Helmut, Simbrunner, Clemens, Bonnani, Alberta, Spiess, Lothar

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Growth and characterization of ZnO thin films using XRD and AFM von Hotovy, Juraj, Kups, T, Kovac, Jaroslav, Spieß, Lothar, Novotny, Ivan

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Growth and characterization of indium oxide films for ozone detection von Hotovy, Ivan, Predanocy, Martin, Hotovy, Juraj, Kups, T, Spieß, Lothar, Wang, Chunyu, Rehacek, Vlastimil

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Potentiostatic electrodeposition under light irradiation for preparation of highly photoactive Cu2O for water splitting applications von Mikolasek, Miroslav, Ondrejka, Peter, Chymo, Filip, Novak, Patrik, Pavuk, Milan, Novotny, Ivan, Rehacek, Vlastimil, Breza, Juraj, Vincze, Andrej, Hotovy, Ivan

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A model of trap-assisted tunneling in GaN/AlGaN/GaN heterostructure based on exchange times von RACKO, Juraj, BENKO, Peter, HOTOVY, Ivan, HARMATHA, Ladislav, MIKOLASEK, Miroslav, GRANZNER, Ralf, KITTLER, Mario, SCHWIERZ, Frank, BREZA, Juraj

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The layers of carbon nanomaterials as the base of ohmic contacts to p-GaN von LIDAY, Jozef, VOGRINCIC, Peter, VRETENAR, Viliam, KOTLAR, Mário, MARTON, Marián, VAVRA, Ivo, HOTOVY, Ivan, BREZA, Juraj, REHACEK, Vlastimil

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Improving the ohmic properties of contacts to P–GaN by adding p–type dopants into the metallization layer von Liday, Jozef, Vogrinčič, Peter, Vincze, Andrej, Breza, Juraj, Hotový, Ivan

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Ohmic contacts to p-GaN Using Au/Ni-Mg-O Metallization von Liday, Jozef, Vogrinčič, Peter, Hotový, Ivan, Bonanni, Alberta, Sitter, Helmut, Lalinský, Tibor, Vanko, Gabriel, Řeháček, Vlastimil, Breza, Juraj, Ecke, Gernot

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