Theoretical study of the temperature dependence of electrical characteristics of Schottky diodes with an inverse near-surface layer von Osvald, J, Horváth, Zs.J

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Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes von Ayyildiz, Enise, Cetin, Hidayet, Horváth, Zs. J.

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Evaluation of Schottky junction parameters from current–voltage characteristics exhibiting large excess currents von HORVATH, Zs. J

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Charging behavior of silicon nitride based non-volatile memory structures with embedded semiconductor nanocrystals von Horváth, Zs.J., Basa, P., Jászi, T., Molnár, K.Z., Pap, A.E., Molnár, Gy

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Effect of location of Si or Ge nanocrystals on the memory behavior of MNOS structures von Horváth, Zs.J., Basa, P., Molnár, K.Z., Molnár, Gy, Jászi, T., Pap, A.E.

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Nanocrystal Non-Volatile Memory Devices von Basa, P., Horváth, Zs.J.

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Effect of nitrogen doping on photoresponsivity of ZnO films von Ievtushenko, A. I., Lashkarev, G. V., Lazorenko, V. I., Karpyna, V. A., Dusheyko, M. G., Tkach, V. M., Kosyachenko, L. A., Sklyarchuk, V. M., Sklyarchuk, O. F., Avramenko, K. A., Strelchuk, V. V., Horvath, Zs. J.

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Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering von LEVICHEV, S, CHAHBOUN, A, BASA, P, ROLO, A. G, BARRADAS, N. P, ALVES, E, HORVATH, Zs. J, CONDE, O, GOMES, M. J. M

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Metal contacts to n-GaN von Dobos, L., Pécz, B., Tóth, L., Horváth, Zs.J., Horváth, Z.E., Tóth, A., Horváth, E., Beaumont, B., Bougrioua, Z.

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Memory effect on CdSe nanocrystals embedded in SiO2 matrix von LEVICHEV, S, BASA, P, HORVATH, Zs. J, CHAHBOUN, A, ROLO, A. G, BARRADAS, N. P, ALVES, E, COMES, M. J. M

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High-power InAs/InAsSbP heterostructure leds for methane spectroscopy (λ ≈ 3.3 μm) von Astakhova, A. P., Golovin, A. S., Il’inskaya, N. D., Kalinina, K. V., Kizhayev, S. S., Serebrennikova, O. Yu, Stoyanov, N. D., Horvath, Zs. J., Yakovlev, Yu. P.

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Electrical and memory properties of silicon nitride structures with embedded Si nanocrystals von Basa, P., Horváth, Zs.J., Jászi, T., Pap, A.E., Dobos, L., Pécz, B., Tóth, L., Szöllősi, P.

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Electrical behaviour of lateral Al/n-GaN/Al structures von Horváth, Zs. J., Dobos, L., Beaumont, B., Bougrioua, Z., Pécz, B.

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Annealed Ti/Cr/Al contacts on n-GaN von Dobos, L., Pécz, B., Tóth, L., Horváth, Zs.J., Horváth, Z.E., Tóth, A.L., Poisson, M.-A.

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Diffused p-n GaAs junctions with nano/microrelief active interface von Borkovskaya, O. Yu, Dmitruk, N. L., Horváth, Zs. J., Mamontova, I. B., Sukach, A. V.

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Features of electron transport in relaxed Si/Si1 − xGex transistor heterostructures with a high doping level von Orlov, M. L., Horvath, Zs. J., Ivina, N. L., Neverov, V. N., Orlov, L. K.

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Al and Ti/Al contacts on n-GaN von Dobos, L., Pécz, B., Tóth, L., Horváth, Zs.J., Horváth, Z.E., Horváth, E., Tóth, A., Beaumont, B., Bougrioua, Z.

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Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures von HORVATH, Zs. J, DOZSA, L, VO VAN TUYEN, PÖDÖR, B, NEMCSICS, A, FRIGERI, P, GOMBIA, E, MOSCA, R, FRANCHI, S

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Modification of Al/Si interface and Schottky barrier height with chemical treatment von Horváth, Zs.J., Ádám, M., Szabó, I., Serényi, M., Van Tuyen, Vo

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Electrical and ellipsometry study of sputtered SiO2 structures with embedded Ge nanocrystals von BASA, P, ALAGOZ, A. S, LOHNER, T, KULAKCI, M, TURAN, R, NAGY, K, HORVATH, Zs. J

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