Optical properties of size quantized PbSe films chemically deposited on GaAs von Shandalov, M., Makai, J. P., Balazs, J., Horvath, Z. s. J., Gutman, N., Sa'ar, A., Golan, Y.

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Thickness dependent formation and properties of GdSi2/Si(100) interfaces von PETÖ, G, MOLNAR, G, DOZSA, L, HORVATH, Z. E, HORVATH, Z. S. J, ZSOLDOS, E, DIMITRIADIS, C. A, PAPADIMITRIOU, L

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Theoretical study of the temperature dependence of electrical characteristics of Schottky diodes with an inverse near-surface layer von Osvald, J, Horváth, Zs.J

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Effect of nitrogen doping on photoresponsivity of ZnO films von Ievtushenko, A. I., Lashkarev, G. V., Lazorenko, V. I., Karpyna, V. A., Dusheyko, M. G., Tkach, V. M., Kosyachenko, L. A., Sklyarchuk, V. M., Sklyarchuk, O. F., Avramenko, K. A., Strelchuk, V. V., Horvath, Zs. J.

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InAs quantum dots in multilayer GaAs-based heterostructures von Pashaev, E. M., Yakunin, S. N., Zaitsev, A. A., Mokerov, V. G., Fedorov, Yu. V., Horvath, Zs. J., Imamov, R. M.

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Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes von Ayyildiz, Enise, Cetin, Hidayet, Horváth, Zs. J.

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Semiconductor nanocrystals in dielectrics: Optoelectronic and memory applications of related silicon-based MIS devices von Horváth, Zs.J.

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Investigation of electrical properties of Au/porous Si/Si structures von ADAM, M, HORVATH, Z. J, BARSONY, I, SZÖLGYEMY, L, VAZSONYI, E, VO VAN TUYEN

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Electrical and low frequency noise properties of Gd and GdCo silicide contacts on n-type Si von Dózsa, L, Horváth, Zs J, Molnár, G L, Petõ, G, Dimitriadis, C A, Papadimitriou, L, Brini, J, Kamarinos, G

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Lateral distribution of Schottky barrier height: A theoretical approach von HORVATH, ZS J

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General interfacial layer expression for the equilibrium Schottky barrier height and its application to annealed Au-GaAs contacts von HORVATH, Z. J

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Anomalous electrical properties of Si/Si1 − x Ge x heterostructures with an electron transport channel in Si layers von Orlov, L. K., Horvath, Z. J., Orlov, M. L., Lonchakov, A. T., Ivina, N. L., Dobos, L.

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Anomalous electrical properties of Si/Si1 − xGex heterostructures with an electron transport channel in Si layers von Orlov, L. K., Horvath, Z. J., Orlov, M. L., Lonchakov, A. T., Ivina, N. L., Dobos, L.

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Effect of crystallization on the electrical and interface characteristics of GdSi2/p-Si Schottky junctions von HORVATH, Z. J, MOLNAR, G, KOVACS, B, PETÖ, G, ANDRASI, M, SZENTPALI, B

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Modification of Al/Si interface and Schottky barrier height with chemical treatment von Horváth, Zs.J., Ádám, M., Szabó, I., Serényi, M., Van Tuyen, Vo

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Comment on engineered Schottky barrier diodes for the modification and control of Schottky barrier heights [J. Appl. Phys. 61, 5159 (1987)] von HORVATH, Z. J

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Morphology and interfacial properties of microrelief metal–semiconductor interface von Dmitruk, N.L., Borkovskaya, O.Yu, Dmitruk, I.N., Mamykin, S.V., Horvath, Zs.J., Mamontova, I.B.

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Electrical behaviour of Al/SiO2/Si structures with SiC nanocrystals von HORVATH, Zs. J, DOZSA, L, KRAFCSIK, O. H, MOHACSY, T, VIDA, Gy

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The effect of ion beam treatment and subsequent annealing on Au/GaAs contacts von PECZ, B, RADNOCZI, G, HORVATH, Z. J, BARNA, P. B, JAROLI, E, GYULAI, J

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InP Schottky junctions for zero bias detector diodes von Horváth, Zs.J, Rakovics, V, Szentpáli, B, Püspöki, S, Žd’ánský, K

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