Electrical behaviour of lateral Al/n-GaN/Al structures von Horváth, Zs. J., Dobos, L., Beaumont, B., Bougrioua, Z., Pécz, B.

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Theoretical study of the temperature dependence of electrical characteristics of Schottky diodes with an inverse near-surface layer von Osvald, J, Horváth, Zs.J

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Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes von Ayyildiz, Enise, Cetin, Hidayet, Horváth, Zs. J.

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Investigation of CdS/InP heterojunction prepared by chemical bath deposition von Rakovics, V., Horváth, Zs. J., Horváth, Zs. E., Bársony, I., Frigeri, C., Besagni, T.

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Evaluation of Schottky junction parameters from current–voltage characteristics exhibiting large excess currents von HORVATH, Zs. J

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New optoelectronic materials: Effects of annealing upon the formation of epitaxial iron silicide nanostructures on Si(001) von MOLNAR, G, DOZSA, L, VERTESY, Z, HORVATH, Zs. J

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Charging behavior of silicon nitride based non-volatile memory structures with embedded semiconductor nanocrystals von Horváth, Zs.J., Basa, P., Jászi, T., Molnár, K.Z., Pap, A.E., Molnár, Gy

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Nanocrystal Non-Volatile Memory Devices von Basa, P., Horváth, Zs.J.

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Effect of location of Si or Ge nanocrystals on the memory behavior of MNOS structures von Horváth, Zs.J., Basa, P., Molnár, K.Z., Molnár, Gy, Jászi, T., Pap, A.E.

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Structural and electrical properties of Au and Ti/Au contacts to n-type GaN von Dobos, L., Pécz, B., Tóth, L., Horváth, Zs.J., Horváth, Z.E., Beaumont, B., Bougrioua, Z.

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Metal contacts to n-GaN von Dobos, L., Pécz, B., Tóth, L., Horváth, Zs.J., Horváth, Z.E., Tóth, A., Horváth, E., Beaumont, B., Bougrioua, Z.

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Bilayer Cr/Au contacts on n-GaN von Dobos, L., Tóth, L., Pécz, B., Horváth, Zs.J., Horváth, Z.E., Tóth, A.L., Beaumont, B., Bougrioua, Z.

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Comparative study of I-V characteristics of the ICB deposited Ag\n-Si(111) and Ag\p-Si(100) Schottky junctions von Cvikl, B, Koros̆ak, D, Horváth, Zs J

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Effect of nitrogen doping on photoresponsivity of ZnO films von Ievtushenko, A. I., Lashkarev, G. V., Lazorenko, V. I., Karpyna, V. A., Dusheyko, M. G., Tkach, V. M., Kosyachenko, L. A., Sklyarchuk, V. M., Sklyarchuk, O. F., Avramenko, K. A., Strelchuk, V. V., Horvath, Zs. J.

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Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering von LEVICHEV, S, CHAHBOUN, A, BASA, P, ROLO, A. G, BARRADAS, N. P, ALVES, E, HORVATH, Zs. J, CONDE, O, GOMES, M. J. M

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Memory effect on CdSe nanocrystals embedded in SiO2 matrix von LEVICHEV, S, BASA, P, HORVATH, Zs. J, CHAHBOUN, A, ROLO, A. G, BARRADAS, N. P, ALVES, E, COMES, M. J. M

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Schottky junctions on n-type InP for zero bias microwave detectors von Horváth, Zs. J., Rakovics, V., Szentpáli, B., Püspöki, S.

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Schottky contacts to InP von Horváth, Zs. J., Ayyildiz, E., Rakovics, V., Cetin, H., Põdör, B.

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Electrical and memory properties of silicon nitride structures with embedded Si nanocrystals von Basa, P., Horváth, Zs.J., Jászi, T., Pap, A.E., Dobos, L., Pécz, B., Tóth, L., Szöllősi, P.

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Effect of crystal defects on the electrical behaviour of InP and SiGe epitaxial structures von Horváth, Zs. J., Orlov, L. K., Rakovics, V., Ivina, N. L., Tóth, A. L., Demidov, E. S., Riesz, F., Vdovin, V. I., Pászti, Z.

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