Large-Scale Electronic Structure Calculations of Vacancies in 4H-SiC Using the Heyd-Scuseria-Ernzerhof Screened Hybrid Density Functional von Gali, Adam, Svensson, Bengt Gunnar, Hornos, Tamas

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High Temperature Silicon Carbide CMOS Integrated Circuits von Finney, S., Ramsay, Ewan P., Zhu, C., Murphy, A.E., Fletcher, John, Smith, Dave A., Thompson, Robin. F., Young, R.A.R., Cormack, Jennifer D., Clark, David T.

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Ambient Intelligence - Software and Applications - 14th International Symposium on Ambient Intelligence von Novais, Paulo, Julián Inglada, Vicente, Hornos, Miguel J, Satoh, Ichiro, Carneiro, Davide, Carneiro, João, Alonso, Ricardo S

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High-Temperature Reliability of SiC Power MOSFETs von Green, Ronald, Habersat, Daniel B., Lelis, Aivars J.

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Chromosome homogeneity in populations of Triatoma brasiliensis Neiva 1911 (Hemiptera - reduviidae - triatominae) von Panzera, F, Pérez, R, Nicolini, P, Hornos, S, Costa, J, Borges, E, Diotaiuti, L, Schofield, C J

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Single-Crystal Silicon Carbide: A Biocompatible and Hemocompatible Semiconductor for Advanced Biomedical Applications von Frewin, Christopher L., Saddow, Stephen E., Schettini, N., Jarosezski, M., Weeber, E., Oliveros, A., Coletti, Camilla

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Energy Band Structure of SiO2/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer von Watanabe, Heiji, Harries, James, Kagei, Yusuke, Nakamura, Takashi, Mitani, Shuhei, Nakano, Yuki, Yoshigoe, Akitaka, Teraoka, Yuden, Kirino, Takashi, Shimura, Takayoshi, Hosoi, Takuji

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Correlation between Thermal Stress and Formation of Interfacial Dislocations during 4H-SiC Epitaxy and Thermal Annealing von Tsuchida, Hidekazu, Nagano, Masahiro, Zhang, Xuan

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Investigation of Surface and Interface Morphology of Thermally Grown SiO2 Dielectrics on 4H-SiC(0001) Substrates von Watanabe, Heiji, Konzono, Kohei, Nakamura, Takashi, Mitani, Shuhei, Nakano, Yuki, Uenishi, Yusuke, Shimura, Takayoshi, Hosoi, Takuji

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4H-SiC Schottky Diodes for Temperature Sensing Applications in Harsh Environments von Udrea, Florin, Draghici, Florin, Craciunioiu, F., Puscasu, D., Udrea, F., Brezeanu, Gheorghe, Rusu, Ion, Boianceanu, C.

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Microscopic Examination of SiO2/4H-SiC Interfaces von Hatakeyama, Tetsuo, Suzuki, T., Shinohe, Takashi, Okumura, Hajime, Matsuhata, Hirofumi

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Instability of 4H-SiC MOSFET Characteristics due to Interface Traps with Long Time Constants von Hatayama, Tomoaki, Yano, Hiroshi, Okamoto, Dai, Oshiro, Yuki, Fuyuki, Takashi

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Forced-Air-Cooled 10 kW Three-Phase SiC Inverter with Output Power Density of More than 20 kW/L von Matsui, Kohei, Tanimoto, Satoshi, Sato, Shinji, Murakami, Yoshinori, Yamaguchi, Hiroshi, Sato, Hiroshi, Zushi, Yusuke

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Epitaxial Growth on 4H-SiC on-Axis, 0.5°, 1.25°, 2°, 4°, 8° Off-Axis Substrates – Defects Analysis and Reduction von Mazur, Krystyna, Strupiński, Wlodek, Olszyna, Andrzej Roman, Teklinska, Dominika, Tokarczyk, Mateusz, Kościewicz, Kinga, Kowalski, Grzegorz

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Understanding the Inversion-Layer Properties of the 4H-SiC/SiO2 Interface von Matocha, Kevin, Tilak, Vinayak

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Study of Mobility Limiting Mechanisms in (0001) 4H and 6H-SiC MOSFETs von Chow, T. Paul, Naik, Harsh

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Numerical Simulations of a 4H-SiC BMFET Power Transistor with Normally-Off Characteristics von Pezzimenti, Fortunato, Della Corte, Francesco Giuseppe, Bellone, Salvatore, Nipoti, Roberta

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Improved Observation of SiC/SiO2 Oxide Charge Traps Using MOS C-V von Habersat, Daniel B., Lelis, Aivars J.

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3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide von Schöner, Adolf, Sakata, Toyokazu, Esteve, Romain, Kobayashi, Motoki, Uchida, Hidetsugu, Minami, Akiyuki

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Formation of Periodic Steps on 6H-SiC (0001) Surface by Annealing in a High Vacuum von Petrov, V.N., Dement’ev, P.A., Lebedev, Sergey P., Kotousova, I.S., Lebedev, Alexander A., Lavrent’ev, A.A., Titkov, Alexander N.

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